1.32 μ m InAs ∕ GaAs quantum-dot resonant-cavity light-emitting diodes grown by metalorganic chemical vapor deposition J.Enhanced modulation rate in platinum-diffused resonant-cavity light-emitting diodes J. Appl. Phys. 98, 093504 (2005); 10.1063/1.2125119
Fabrication and characterization of 650 nm resonant-cavity light-emitting diodesIn this article, the authors report on the realization of substrate-free InGaN-based thin-film resonant-cavity light-emitting diodes ͑TF-RCLEDs͒. Experimentally, the sapphire substrate was stripped by using the laser lift-off technique. The / 4-thick Ta 2 O 5 / SiO 2 distributed Bragg reflector and the metallic Ag film with mirror reflectivities of 68% and 97% were, respectively, coated onto the top and bottom of the substrate-free LEDs to form a Fabry-Pérot cavity. The performances of LEDs are characterized by light output power, external quantum efficiency, emission spectrum, angular-resolved intensity distribution, and dynamic response. As a result, the fabricated TF-RCLEDs exhibit a low operating voltage of 3.34 V at 20 mA, a maximum light output power of 6.3 mW at 140 mA, and an external quantum efficiency of 5.5% at 4 mA. In addition, the TF-RCLEDs show temperature insensitivity as compared to the normal LEDs directly grown on the sapphire substrates. Furthermore, the 50% viewing angle of TF-RCLED is smaller than that of normal LED, i.e., 146°versus 168°at 60 mA. Finally, the eye pattern of the TF-RCLEDs is improved compared to that of the normal LEDs as operated at the data transmission rate of 100 Mbit/ s. These results exhibit that the InGaN-based TF-RCLEDs are excellent candidates for the use in short-distance plastic optical fiber communications.