Strength of diamond - silicon carbide interfaces in silicon carbide bonded diamond materials containing graphitic interlayers

Yousefi, Peyman; Matthey, Björn; Fontanot, T.; Herre, Patrick; Höhn, Sören; Kunze, S.; Christiansen, Silke; Herrmann, Matthias

doi:10.1016/j.oceram.2022.100296

Cited by 2 publications

(2 citation statements)

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“…Micron‐sized diamond transforms into graphite at 750°C under a non‐oxygenated atmosphere 17 . Diamond is metastable under the silicon infiltration conditions, and kinetics govern its transformation into graphite 29 . The SEM and XRD results revealed that at a high temperature, the graphitized diamond participated in the SiC reaction during the subsequent infiltration and was consumed by liquid Si to form SiC, which increased the density of the sintered body.…”

Section: Resultsmentioning

confidence: 99%

“…17 Diamond is metastable under the silicon infiltration conditions, and kinetics govern its transformation into graphite. 29 The SEM and XRD results revealed that at a high temperature, the graphitized diamond participated in the SiC reaction during the subsequent infiltration and was consumed by liquid Si to form SiC, which increased the density of the sintered body. The microstructure of the sample rinsed with an HF/HNO 3 mixture was studied by SEM, as shown in Figure 7.…”

Section: Microstructurementioning

confidence: 99%

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Effect of infiltration temperature on graphitization and properties of diamond/SiC composites with SiC matrix

Hong,

Chen,

Liu

et al. 2024

Int J Applied Ceramic Tech

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In this study, diamond/silicon carbide (SiC) composites were prepared by liquid Si infiltration. The effects of the infiltration temperature on the densification, diamond graphitization, and thermal conductivity of the composites were investigated. The effects of the diamond content on the thermal conductivity and bending strength were also explored. X‐ray diffraction and Raman spectroscopy detected diamond graphitization at an infiltration temperature of 1480°C. Almost no graphitized diamond was observed due to reactions between silicon and carbon to form SiC at infiltration temperatures higher than 1480°C. As the infiltration temperature increased, graphitized diamond was consumed, and the thermal conductivity of the composite rose. The thermal conductivity and bending strength of the composites depended on the diamond content, reaching values of 257 W/m K and 237 MPa, respectively, for the sample with a diamond content of 17.9 vol.%. The higher bending strength was mainly ascribed to the high diamond content and well‐bonded interface.

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Section: Resultsmentioning

confidence: 99%

Section: Microstructurementioning

confidence: 99%