2023
DOI: 10.1016/j.oceram.2023.100386
|View full text |Cite
|
Sign up to set email alerts
|

Thermal properties of SiC-bonded diamond materials produced by liquid silicon infiltration

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
4
0

Year Published

2024
2024
2024
2024

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(4 citation statements)
references
References 29 publications
0
4
0
Order By: Relevance
“…Diamond‐SiC composites are extremely wear‐resistant materials. They show very good mechanical 13 and thermal properties 11 and therefore excellent prerequisites for use in seals and bearings in extremely harsh environments. One key is the very good interfaces 17 in the composites for both processing routes: conventional pressing technology or the newly developed inlay technology.…”
Section: Discussionmentioning
confidence: 99%
See 2 more Smart Citations
“…Diamond‐SiC composites are extremely wear‐resistant materials. They show very good mechanical 13 and thermal properties 11 and therefore excellent prerequisites for use in seals and bearings in extremely harsh environments. One key is the very good interfaces 17 in the composites for both processing routes: conventional pressing technology or the newly developed inlay technology.…”
Section: Discussionmentioning
confidence: 99%
“…The most promising route is the infiltration technology with liquid silicon, 7–10 which is well‐known for silicon‐infiltrated silicon carbide (SiSiC). In this way, materials with a wide range of different microstructures and properties can be achieved 11 . In recent years the knowledge of diamond‐SiC composites and their properties were investigated more in detail 12,13 …”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Higher TC than existing thermal management materials (such as Invar, Cu/W, Si/Al, SiC/Al, etc.) is needed to meet the urgent heat dissipation requirements of large-scale integrated circuits [4,5]. Although the TC of pure Al can reach 237 W/m•K, this is sufficient for conventional electronic packaging environments.…”
Section: Introductionmentioning
confidence: 99%