Streaming distribution of two-dimensional electrons in III-N heterostructures for electrically pumped terahertz generation

Korotyeyev, V. V.; Kochelap, V. A.; Woolard, Dwight L.

doi:10.1063/1.1569039

Cited by 22 publications

(29 citation statements)

References 14 publications

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“…Furthermore, in the 2D systems, optical phonon emission has a sharper threshold and the condition (iii) can be met readily. It was shown [5] that in high-quality quantum heterostructures the streaming regime can occur at elevated temperatures (above the nitrogen temperature). We calculated the dynamic mobility for AlGaN/GaN/AlGaN QWs at moderate electric fields for the QW width of 30 Ǻ and ambient temperature 77 K. At a given frequency ν, the dynamic mobility shows resonances as a function of the field, as depicted in Fig.…”

Section: Low Concentration Group-iii Nitride Heterostructuresmentioning

confidence: 99%

High‐speed and high‐frequency electron effects in nitride semiconductors for terahertz applications

Sokolov

Kochelap²,

Korotyeyev³

et al. 2005

phys. stat. sol. (c)

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We discuss the basic properties of the transient hot-electron transport and dynamic mobility in group-III nitrides under dominant electron-polar-optical-phonon scattering determining their capability for applications in THz frequency range. For bulk samples with high electron concentration, we provide the phaseplane analysis of the time-dependent transient transport and classification of different transient regimes depending on the initial conditions. The calculations predict a frequency interval with negative dynamic electron mobility where the amplification and generation of microwaves in THz frequency range is possible. For quantum-well heterostructures with low electron concentration under the streaming regime at moderate fields, we have revealed THz frequency windows of the negative microwave mobility, which enables the development of a tunable THz laser based on nitride quantum heterostructures. IntroductionThe group-III nitrides are known to demonstrate a set of unique fundamental material properties [1, 2] which have renewed interest in different high-field regimes in these materials. Specific features of the electron band structure and electron-phonon interaction characterized by strong electronoptical phonon coupling and large optical phonon energy (ћω op ~ 90 meV) can be used for realization of electrically pumped high-frequency generators operating in terahertz frequency diapason. In this work, we focus on the analysis of hot-electron transport regimes important for the nitrides: transient dynamics at high dc electric fields and dynamic mobility in bulk-like structures; the streaming transport regime and dynamic mobility in quantum wells (QWs) with two-dimensional (2D) electrons at moderate fields. We determine the conditions for a negative high-frequency electron mobility, which indicate perspective applications of the nitrides for ultra-high speed devices as well as the development of THz generators.

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Section: Low Concentration Group-iii Nitride Heterostructuresmentioning

confidence: 99%

High‐speed and high‐frequency electron effects in nitride semiconductors for terahertz applications

Sokolov

Kochelap²,

Korotyeyev³

et al. 2005

phys. stat. sol. (c)

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“…[7][8][9] Recently, the streaming transport of the two-dimensional electron gas in III-nitride heterostructures has been addressed, [10][11][12] where possible advantages of the two-dimensional ͑2D͒ streaming transport compared to the three-dimensional ͑3D͒ case are discussed. However, in these works the influence of the interface roughness on 2D electron gas ͑2DEG͒ transport was neglected.…”

Section: Introductionmentioning

confidence: 99%

Influence of interface roughness on two-dimensional electron gas streaming transport in GaN-based heterostructures

Polyakov

Schwierz

2006

Journal of Applied Physics

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“…According to the analysis given in a number of the works [8], these conditions can be met in the nitride materials, as well as in the nitride heterostructures [9,10]. At the streaming regime, the electron motion is nearly periodic: in an appropriate range of the dc electric field, an electron accelerates quasiballistically until it reaches the optical phonon energy, then the electron loses its energy by emitting an optical phonon and starts the next period of acceleration ‡.…”

Section: Introductionmentioning

confidence: 99%

High-frequency response of GaN in moderate electric and magnetic fields: interplay between cyclotron and optical phonon transient time resonances

Syngayivska¹,

Korotyeyev²,

Kochelap³

2013

Semicond. Sci. Technol.

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Abstract. We have studied the high-frequency properties of the non-equilibrium electron gas in GaN samples subjected to electric and magnetic fields. Spectra of the complex tensor of the dynamical mobility have been calculated for THz frequency range. For the compensated GaN and low temperatures, in the intervals of electric fields of the few kV /cm and magnetic fields of the few T the existence of the cyclotron and optical phonon transit-time resonances has been identified. We have shown that interplay of two resonances gives rise to specific spectra of THz transmission and absorption (or gain). We suggest that experimental investigation of these effects will facilitate elaboration of field controlled devices for THz optoelectronics.

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Streaming distribution of two-dimensional electrons in III-N heterostructures for electrically pumped terahertz generation

Abstract: Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN Appl. Phys. Lett.

Cited by 22 publications

References 14 publications

High‐speed and high‐frequency electron effects in nitride semiconductors for terahertz applications

High‐speed and high‐frequency electron effects in nitride semiconductors for terahertz applications

Influence of interface roughness on two-dimensional electron gas streaming transport in GaN-based heterostructures

High-frequency response of GaN in moderate electric and magnetic fields: interplay between cyclotron and optical phonon transient time resonances

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