High-frequency response of GaN in moderate electric and magnetic fields: interplay between cyclotron and optical phonon transient time resonances

Syngayivska, G. I.; Korotyeyev, V. V.; Kochelap, V. A.

doi:10.1088/0268-1242/28/3/035007

Cited by 8 publications

(7 citation statements)

References 40 publications

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“…It should be noted, that for electrons with parabolic dispersion law the application of the magnetic field along electric one has no affect on transport characteristics Vd(E) and ) (E > ε < [38]. It follows from the equations (2a), (3a) from which it is seen that the electron motion in directions along and transverse to fields is uncoupled.…”

Section: Diffusion Coefficient At the E || H Configurationmentioning

confidence: 92%

Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields

Syngayivska¹

2018

Semicond. Phys. Quantum Electron. Optoelectron

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We studied the diffusion coefficient of hot electrons of GaN crystals in moderate electric (1...10 kV/cm) and magnetic (1…4 T) fields. Two configurations, parallel and crossed fields, are analysed. The study was carried out for compensated bulk-like GaN samples at different lattice temperatures (30…300 K) and impurity concentrations (10 16 …10 17 cm -3 ). We found that at low lattice temperatures and low impurity concentrations, electric-field dependencies of the transverse-to-current components of the diffusion tensor are non-monotonic for both configurations, while the diffusion processes are greatly controlled by the magnetic field. With an increase of the lattice temperature or the impurity concentration, the behaviour of the diffusion tensor becomes more monotonous and less affected by the magnetic field. We showed that such behaviour of the diffusion processes is due to the distinct kinetics of the hot electrons in polar semiconductors with strong electron-optical phonon coupling. We suggest that measurements of the diffusion coefficient of the electrons subjected to electric and magnetic fields facilitate the identification of features of different electron transport regimes and the development of more efficient devices and practical applications.

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Section: Diffusion Coefficient At the E || H Configurationmentioning

confidence: 92%

Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields

Syngayivska¹

2018

Semicond. Phys. Quantum Electron. Optoelectron

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“…It should be noted that for electrons with parabolic dispersion law, application of the magnetic field along the electric one has no effect on transport characteristics V d (E) and 〈ε ⊥ 〉(E) [38]. It follows from the equations (3a), (4a), where it is seen that electron motion in directions along and transverse to fields is uncoupled.…”

Section: Diffusion Coefficient At the E || H Configurationmentioning

confidence: 96%

“…To calculate electron transport characteristics, we used the single-particle algorithm of the Monte Carlo procedure [20,22,23,38]. Three main scattering mechanisms were taken into account: electron scattering by ionized impurities, acoustic phonons and polar optical phonons.…”

Section: The Model Of the Electron Transport In Electric And Magneticmentioning

confidence: 99%

Untitled

2018

Semicond. Phys. Quantum Electron. Optoelectron

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We have studied the diffusion coefficient of hot electrons in GaN crystals under moderate electric (1...10 kV/cm) and magnetic (1…4 T) fields. Two configurations, parallel and crossed fields, have been analyzed. The study was carried out for compensated bulklike GaN samples for various lattice temperatures (30…300 K) and impurity concentrations (10 16 …10 17 cm -3 ). We found that at low lattice temperatures and low impurity concentrations, electric-field dependences of the transversal-to-current components of the diffusion tensor are non-monotonic for both configurations, while diffusion processes are mainly controlled by the magnetic field. With increasing the lattice temperature or impurity concentration, behaviour of the diffusion tensor becomes more monotonous and less affected by the magnetic field. We showed that this behaviour of the diffusion processes is caused by the distinct kinetics of hot electrons in polar semiconductors with strong electron -optical phonon coupling. We have suggested that measurements of the diffusion coefficient of electrons subjected to electric and magnetic fields facilitate identification of features of different electron transport regimes and development of more efficient devices and practical applications.

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“…Let us analyze spectra of the transmission, , reflection, , and loss, , coefficients for the grating-2D gas structure in the case where the parameters of a 2D gas correspond to a real material used in modern THz optoelectronics, gallium nitride (GaN). The researches of peculiarities in the optical characteristics of GaN-based heterostructures in the THz frequency range attracted a substantial attention, because this material is widely used while creating THz modulators and generators [22][23][24]. As is seen from Fig.…”

Section: Frequency Dependences Of the Transmission Reflection And Lmentioning

confidence: 99%

Interaction of a Terahertz Electromagnetic Wave with the Plasmonic System “Grating–2D-Gas”. Analysis of Features of the Near Field

Lyaschuk¹,

Korotyeyev²

2014

Ukr. J. Phys.

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The theory of interaction between electromagnetic waves and a plasmonic structure consisting of the subwavelength metal grating locating over the layer of a two-dimensional (2D) electron gas has been developed. The frequency dependences of the transmission, reflection, and loss coefficients are shown to have a resonant behavior relating to the excitation of plasmons in the 2D gas. The influence of the geometrical and electrical parameters of the system on the plasmon resonance characteristics is studied, and the structure of an electromagnetic field in the near-field zone is analyzed. The spatial distributions of the electric field components, the electric power density, and the electromagnetic wave polarization are found. The plasmon resonance is shown to substantially increase the local concentration of the electric field in the near-field zone of the grating.

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High-frequency response of GaN in moderate electric and magnetic fields: interplay between cyclotron and optical phonon transient time resonances

Cited by 8 publications

References 40 publications

Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields

Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields

Untitled

Interaction of a Terahertz Electromagnetic Wave with the Plasmonic System “Grating–2D-Gas”. Analysis of Features of the Near Field

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