Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation

Geum, Dae‐Myeong; Kim, Seong Kwang; Kang, Chang‐Mo; Moon, Seung‐Hyun; Kyhm, Jihoon; Han, Jae‐Hoon; Lee, Dong-Seon; Kim, Sang-Hyeon

doi:10.1039/c9nr04423j

Cited by 49 publications

(29 citation statements)

References 41 publications

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“…These results highlight the necessity to optimize the process of MESA formation and passivation, in order to suppress the EQE drop by reducing the etching-related defects. In our case, the passivation involves the removal of the native oxide layer and the formation of a thin protective layer to prevent further atmospheric oxidation by using for example sulfur treatment with ammonium sulfide (NH4)Sx [34], [35]. Other techniques could be used such as plasma treatment [36], nitridation [37] or passivation with film deposition [38] such as ALD Al2O3 deposition [9], [29].…”

Section: Figure 12 Tof-sims Maps Of Chlorine and Boronmentioning

confidence: 99%

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Boussadi

Rochat

Barnes

et al. 2021

Journal of Luminescence

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Previous reports have studied the impact of sidewall defects on AlGaInP micro light emitting diode (µLED) only by Current-Voltage-Luminescence (I-V-L) measurements. In this work, we propose an alternative approach to investigate these defects directly after MESA formation, by coupling optical characterization techniques together with Time-of-flight secondary ion mass spectrometry (TOF-SIMS) on AlGaInP square shaped pixels of different sizes formed by BCl3-based Reactive Ion Etching (RIE). It is found that for a 6×6 µm² pixel, the light emission homogeneity is largely impacted by the sidewall defects. From emission efficiency map deduced by temperature-dependent cathodoluminescence measurements, we estimate that 86% of the 6×6 µm² pixel exhibit a lower efficiency than the center. The carriers lifetime extracted from time-resolved photoluminescence (TRPL) measurements on larger pixel begins to decrease gradually at 3 µm from the sidewall due to non-radiative recombinations. On the other hand, the TOF-SIMS analysis shows that residues of boron and chlorine remain on the surface and sidewalls of the pixel after BCl3 etching. These results show the importance to characterize the µLEDs at the MESA step and the necessity to optimize the etching process and the passivation.

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Section: Figure 12 Tof-sims Maps Of Chlorine and Boronmentioning

confidence: 99%

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Boussadi

Rochat

Barnes

et al. 2021

Journal of Luminescence

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show abstract

“…Compared to color filters that absorb blue light, DBR and CLC film help recycle the leaked blue light to further excite QDs. Other methods to achieve full-color micro-LED display like vertically stacked RGB micro-LED array 61,117,118 and monolithic wavelength tunable nanowire LED 119 are also under investigation. Micro-OLED displays can be generally categorized into RGB OLED and white OLED (WOLED).…”

Section: Working Principlesmentioning

confidence: 99%

Augmented reality and virtual reality displays: emerging technologies and future perspectives

et al. 2021

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With rapid advances in high-speed communication and computation, augmented reality (AR) and virtual reality (VR) are emerging as next-generation display platforms for deeper human-digital interactions. Nonetheless, to simultaneously match the exceptional performance of human vision and keep the near-eye display module compact and lightweight imposes unprecedented challenges on optical engineering. Fortunately, recent progress in holographic optical elements (HOEs) and lithography-enabled devices provide innovative ways to tackle these obstacles in AR and VR that are otherwise difficult with traditional optics. In this review, we begin with introducing the basic structures of AR and VR headsets, and then describing the operation principles of various HOEs and lithography-enabled devices. Their properties are analyzed in detail, including strong selectivity on wavelength and incident angle, and multiplexing ability of volume HOEs, polarization dependency and active switching of liquid crystal HOEs, device fabrication, and properties of micro-LEDs (light-emitting diodes), and large design freedoms of metasurfaces. Afterwards, we discuss how these devices help enhance the AR and VR performance, with detailed description and analysis of some state-of-the-art architectures. Finally, we cast a perspective on potential developments and research directions of these photonic devices for future AR and VR displays.

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“…Scaling down, high-density integration, and low-cost and high-throughput production are highly demanded in various optoelectronic devices, such as electronic large-scaleintegration chips, light-emitting-diode displays, and photonic integrated circuits [1][2][3][4][5][6][7]. The conventional pick-and-place integration method, however, has limitations for these required factors.…”

Section: Introductionmentioning

confidence: 99%

Selective Transfer of Si Thin-Film Microchips by SiO2 Terraces on Host Chips for Fluidic Self-Assembly

et al. 2021

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Fluidic self-assembly is a versatile on-chip integration method. In this scheme, a large number of semiconductor microchips are spontaneously deposited onto a host chip. The host chip typically comprises a Si substrate with an array of pockets at the designated microchip placement sites. In this study, we installed an SiO2 layer on the terrace region between the pockets of the host chip, to reduce the attraction with the Si microchips. By the SiO2-topped terrace scheme, we demonstrated a significant enhancement in the deposition selectivity of the Si microchips to the pocket sites, relative to the case of the conventional Si-only host chip. We theoretically explained the deposition selectivity enhancement in terms of the van der Waals interaction. Furthermore, our quantitative analysis implicated a potential applicability of the commonly used interlayer dielectrics, such as HfO2, silsesquioxanes, and allyl ethers, directly as the terrace component.

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Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation

Abstract: In this study, we proposed a strategy to fabricate vertically stacked subpixel (VSS) micro-light-emitting diodes (μ-LEDs) for future ultrahigh-resolution microdisplays.

Cited by 49 publications

References 41 publications

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Augmented reality and virtual reality displays: emerging technologies and future perspectives

Selective Transfer of Si Thin-Film Microchips by SiO2 Terraces on Host Chips for Fluidic Self-Assembly

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