Strategy for sub-80-nm contact hole patterning considering device fabrication

Yoon, Joo‐Byoung; Hata, Mitsuhiro; Hah, Jung-Hwan; Kim, Hyun Woo; Woo, Sang-Gyun; Cho, Han-Ku; Han, Woo-Sung

doi:10.1117/12.534811

Cited by 9 publications

(1 citation statement)

References 5 publications

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“…Another group is resist related techniques, such as photo-resist developments, resist shrinkage technologies. Resist shrinkage technologies for example, there are thermal flow, RELACS etc [1][2][3][4][5][6][7]. RELACS process is introduced by AZ Electronic Materials to be realized the small contacts [8][9].…”

Section: Introductionmentioning

confidence: 99%

Proximity effect correction for the chemical shrink process of different type contact holes

Hsieh

Liu

et al. 2007

SPIE Proceedings

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Small contact hole patterning had become the most difficult task in optical lithography as design rule of semiconductor continuously shrinks below 65nm. Conventional contact hole scheme need to avoid side-lobe and conduct complicated dense-isolated bias for resolution enhancement and depth of focus (DOF) improvement. To overcome this issue, some RETs (Resolution Enhancement Techniques) by process had been investigated, like RELACS (resolution enhancement lithography assisted by chemical shrink). RELACS is one of feasible procedures which could provide enough improvement in resolution, photo-resist profile, DOF, and CD uniformity (CDU). Proximity effect is one of significant topics to evaluate chemical shrink bias of different type contacts. Research of shrink bias of different size and pitch contacts had been investigated broadly in the past. In general, the constant bias of shrinkage for difference pattern sizes was an assumption. However, according to our evaluative results, we had characterized the correlation about the shrink bias versus pattern size. In this paper, we not only show DOF, CDU, shrink bias of RELACS, but also present chemical shrink bias of different size and different pitch contact holes and then we could follow this correlation rule to define general rule for proximity effect correction.

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Section: Introductionmentioning

confidence: 99%

Proximity effect correction for the chemical shrink process of different type contact holes

Hsieh

Liu

et al. 2007

SPIE Proceedings

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Chemical shrinkage material: Nanoscale patterning through interpolymer complex

Hata

Hah

Kim

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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A chemical shrinkage material causing large attachments without pattern deformation is suggested. This material is an aqueous solution of two kinds of polymers, and its shrinkage mechanism is based on the interpolymer complex formation and gelation principle. Attachment greater than 25 nm was confirmed on ArF photoresist pattern at 145°C, and its shrinkage properties were found to be proportional to initial critical dimension and process temperature, and pitch dependency was not observed. An additional study on temperature responsive phase transition behavior of the material was also undertaken.

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Wafer-scale nanopatterning using electrodeposition

Lee

2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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This work proposed and demonstrated a simple yet effective technique that can achieve wafer-scale nanopatterning using electrodeposition and standard microlithographic tools. The proposed technique shrinks the microscale features in the metal layer to the nanoscale and subsequently uses the same metal layer as the etch mask for pattern transfer. As a proof of concept, an array of trenches and holes with initial dimensions of around 700 nm over a 1×1 cm2 wafer area was used to achieve sub-100 nm features in the underlying substrate after the pattern transfer. In addition to the electrodeposition process, only standard i-line lithography, metal deposition and lift-off, and reactive ion etching were used in the experiment. The proposed technique can be extended to the patterning of a general nanoscale pattern except when the pattern density exceeds the resolution limit of the microlithographic tool. In this article, the authors also discuss the line-edge roughness, registration error, and pattern-dependent shrinking rate in the electrodeposition nanopatterning process. The results can be applied to various metallic and semiconducting surfaces and are expected to be advantageous in the fabrication of many nanoscale devices including zero-mode waveguides and nanocantilevers.

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Strategy for sub-80-nm contact hole patterning considering device fabrication

Cited by 9 publications

References 5 publications

Proximity effect correction for the chemical shrink process of different type contact holes

Proximity effect correction for the chemical shrink process of different type contact holes

Chemical shrinkage material: Nanoscale patterning through interpolymer complex

Wafer-scale nanopatterning using electrodeposition

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