Strategies for controlling Si nanowire formation during Au-assisted electroless etching

Lee, Dong Hoon; Kim, Yongkwan; Doerk, Gregory S.; Laboriante, Ian; Maboudian, Roya

doi:10.1039/c1jm11164g

Cited by 37 publications

(39 citation statements)

References 30 publications

(63 reference statements)

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“…Porosity of the Si NWs was found to be greater at the tip, which resulted in bending of the Si NWs [94,95].…”

Section: Influence Of Doping Density On the Formation Of Mac-etched Smentioning

confidence: 96%

“…When bulk Si is fully lithiated to Li 15 Si 4 , it undergoes a volume expansion of 280% and has a maximum theoretical volumetric capacity of 2,190 mAh·cm -3 . Unfortunately, Si electrodes pulverize as a result of the large expansion and contraction upon Li insertion and extraction and this causes the electrode material to lose contact with the current collector, lower its conductivity, and result in a loss of capacity with cycling [71,95,133,[143][144][145][146][147][148]. Several Si structures have been investigated as viable anodes for LIBs, including Si thin films [149,150] and Si powder [151,152].…”

Section: Si Anodes For Li-ion Batteriesmentioning

confidence: 99%

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Metal-assisted chemical etching of silicon and the behavior of nanoscale silicon materials as Li-ion battery anodes

2015

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This review outlines the developments and recent progress in metal-assisted chemical etching of silicon, summarizing a variety of fundamental and innovative processes and etching methods that form a wide range of nanoscale silicon structures. The use of silicon as an anode for Li-ion batteries is also reviewed, where factors such as film thickness, doping, alloying, and their response to reversible lithiation processes are summarized and discussed with respect to battery cell performance. Recent advances in improving the performance of silicon-based anodes in Li-ion batteries are also discussed. The use of a variety of nanostructured silicon structures formed by many different methods as Li-ion battery anodes is outlined, focusing in particular on the influence of mass loading, core-shell structure, conductive additives, and other parameters. The influence of porosity, dopant type, and doping level on the electrochemical response and cell performance of the silicon anodes are detailed based on recent findings. Perspectives on the future of silicon and related materials, and their compositional and structural modifications for energy storage via several electrochemical mechanisms, are also provided.

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“…Porosity of the Si NWs was found to be greater at the tip, which resulted in bending of the Si NWs [94,95].…”

Section: Influence Of Doping Density On the Formation Of Mac-etched Smentioning

confidence: 96%

Section: Si Anodes For Li-ion Batteriesmentioning

confidence: 99%

Metal-assisted chemical etching of silicon and the behavior of nanoscale silicon materials as Li-ion battery anodes

2015

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“…New structures such as a 'bamboo shoot' like pattern could also be established with simple adjustment of parameters. More importantly, we have found through detailed in situ investigation that the formation of inclination and clustering in this process is likely not through the normally considered 'bending' model [25], but rather due to a preferential lateral movement of reaction fronts (accompanied by subsequent motion of silver particles) at the bottom of the Si wires (here 'lateral' refers to the direction parallel to the surface of the substrate while conventional 'vertical' etching is perpendicular to the surface). Evidently, significant mass transport of the Ag results and can be detected by energy-dispersive x-ray spectroscopy (EDX) measurement on the surface of the Si substrate.…”

Section: Introductionmentioning

confidence: 88%

Controllable light-induced conic structures in silicon nanowire arrays by metal-assisted chemical etching

Zhang

Wang²,

Liu³

et al. 2013

Nanotechnology

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Silicon nanowires (SiNWs) have long been considered a promising material due to their extraordinary electrical and optical properties. As a simple, highly efficient fabrication method for SiNWs, metal-assisted chemical etching (MACE) has been intensively studied over recent years. However, effective control by modulation of simple parameters is still a challenging topic and some key questions still remain in the mechanistic processes. In this work, a novel method to manipulate SiNWs with a light-modulated MACE process has been systematically investigated. Conic structures consisting of inclined and clustered SiNWs can be generated and effectively modified by the incident light while new patterns such as 'bamboo shoot' arrays can also be formed under certain conditions. More importantly, detailed study has revealed a new top-down 'diverting etching' model of the conic structures in this process, different from the previously proposed 'bending' model. As a consequence of this mechanism, preferential lateral mass transport of silver particles occurs. Evidence suggests a relationship of this phenomenon to the inhomogeneous distribution of the light-induced electron-hole pairs beneath the etching front. Study on the morphological change and related mechanism will hopefully open new routes to understand and modulate the formation of SiNWs and other nanostructures.

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“…We should point out that most of the primary reports on rough NWs as thermoelectric materials have been MACetched vapor-liquid-solid (VLS) grown NWs, and so are intrinsically doped. [25][26][27][28] In our case, we create a layer of NWs directly from a Si(100) wafer coupon.…”

Section: Methodsmentioning

confidence: 99%

The Nature of Silicon Nanowire Roughness and Thermal Conductivity Suppression by Phonon Scattering Mechanisms

Glynn

Jones

Mogili

et al. 2017

ECS J. Solid State Sci. Technol.

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The nature of the surface roughness of electrolessly etched p-type Si nanowires (NWs) is examined using high resolution transmission electron microscopy and shown to comprise individual silicon nanocrystallites throughout the waviness of the roughness features. As the frequency of roughness features are believed to be sources of surface and boundary scattering, the thermal conductivity below the Casimir limit is still not fully explained. The frequency shift and development of asymmetry in the optical phonon mode in silicon was monitored by Raman scattering measurements as a function of temperature (>1000 K). We assessed the influence of Si NW roughness features on phonon scattering mechanisms including quantum confinement of phonons from roughness nanocrystals, boundary scattering, and optical phonon decay to interacting 3- and 4-phonon processes that may contribute to the cause of significant thermal conductivity suppression in rough Si nanowires. High temperature studies and detailed examination of the substrate of roughness revealed high frequency optical phonon contributions to thermal conductivity suppression.

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Strategies for controlling Si nanowire formation during Au-assisted electroless etching

Cited by 37 publications

References 30 publications

Metal-assisted chemical etching of silicon and the behavior of nanoscale silicon materials as Li-ion battery anodes

Metal-assisted chemical etching of silicon and the behavior of nanoscale silicon materials as Li-ion battery anodes

Controllable light-induced conic structures in silicon nanowire arrays by metal-assisted chemical etching

The Nature of Silicon Nanowire Roughness and Thermal Conductivity Suppression by Phonon Scattering Mechanisms

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