Strained-Silicon on Silicon and Strained-Silicon on Silicon-Germanium on Silicon by Relaxed Buffer Bonding

Abstract

We report the creation of two novel complementary metal oxide semiconductor ͑CMOS͒-compatible platforms: strained-silicon on silicon ͑SSOS͒ and strained-silicon on silicon-germanium on silicon ͑SGOS͒. SSOS substrate has an epitaxially defined, strainedsilicon layer directly on silicon wafer without an intermediate SiGe or oxide layer. SSOS is a homochemical heterojunction, i.e., a heterojunction defined by strain state only and not by an accompanying compositional change. SGOS has an epitaxially defined SiGe layer between the strained-silicon channel and the Si substrate, which may prove necessary to prevent excessive off-state leakage in metal oxide semiconductor ͑MOS͒ devices due to overlap of source-drain contacts and the interfacial misfit array