Strained Si with Smooth and Uniformly Strained Surface Formed by Sputter Epitaxy

Phosphorus Mediated Growth of Ge Layer on Si(001) Substrate

“…Recently, we have proposed a SiGe sputter epitaxy method for Si 1-x Ge x layer growth and we have obtained high crystalline layers [5]. Furthermore, we have reported on the method of formation of a flat Ge layer on a heavy boron-or phosphorous-doped Si(001) substrate with our proposed sputter epitaxy method [6,7]. There have been few reports on P mediated Ge growth.…”