Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation

Offsey, S. D.; Schaff, William J.; Lester, L. F.; Eastman, L.F.; McKernan, Stuart

doi:10.1109/3.89963

Cited by 44 publications

(3 citation statements)

References 32 publications

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“…The input saturation power of the SOA can be estimated from :

P_{in, s} ≅ \frac{2 ln (2)}{G - 2} \frac{c h}{Γ_{x y}} \frac{σ_{x y}}{a λ τ},

where c is the speed of light in vacuum, h Planck's constant,

σ_{x y} ≅ 0.17

µm 2 the cross‐section area of the active region, a the differential gain, and τ the recombination lifetime. Typical values for GaInAs quantum wells are

a ≅ 10^{- 15}

cm 2 , and

τ ≅ 1

ns . Assuming a uniform carrier distribution only within the 6‐µm wide current channel, numerical simulations give

{normalΓ}_{x y} ≅ 4.7 \cdot 10^{- 2}

.…”

Section: Resultsmentioning

confidence: 99%

Semiconductor optical amplifiers at 2.0‐µm wavelength on silicon

Volet

Spott

Stanton

et al. 2017

Laser & Photonics Reviews

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A semiconductor optical amplifier at 2.0‐µm wavelength is reported. This device is heterogeneously integrated by directly bonding an InP‐based active region to a silicon substrate. It is therefore compatible with low‐cost and high‐volume fabrication infrastructures, and can be efficiently coupled to other active and passive devices in a photonic integrated circuit. On‐chip gain larger than 13 dB is demonstrated at 20 °C, with a 3‐dB bandwidth of ∼75 nm centered at 2.01 µm. No saturation of the gain is observed for an on‐chip input power up to 0 dBm, and on‐chip gain is observed for temperatures up to at least 50 °C. This technology paves the way to chip‐level applications for optical communication, industrial or medical monitoring, and non‐linear optics.

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“…The input saturation power of the SOA can be estimated from :

P_{in, s} ≅ \frac{2 ln (2)}{G - 2} \frac{c h}{Γ_{x y}} \frac{σ_{x y}}{a λ τ},

where c is the speed of light in vacuum, h Planck's constant,

σ_{x y} ≅ 0.17

µm 2 the cross‐section area of the active region, a the differential gain, and τ the recombination lifetime. Typical values for GaInAs quantum wells are

a ≅ 10^{- 15}

cm 2 , and

τ ≅ 1

ns . Assuming a uniform carrier distribution only within the 6‐µm wide current channel, numerical simulations give

{normalΓ}_{x y} ≅ 4.7 \cdot 10^{- 2}

.…”

Section: Resultsmentioning

confidence: 99%

Semiconductor optical amplifiers at 2.0‐µm wavelength on silicon

Volet

Spott

Stanton

et al. 2017

Laser & Photonics Reviews

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show abstract

“…Even for the samples which did not show emission before RTA, PL emission was observed after RTA at approximately 900 C. The sample grown at 350 C showed a rather intense peak with a shoulder on its lower-energy side already after RTA at 820 C. For the sample grown at 300 C, emission was barely observed after RTA at 830 C. A further increase in RTA temperature to 880 C improved emission intensity, but the PL spectrum was broad. For the sample grown at 250 C, emission was barely observed only after RTA at 905 C. Offsey et al 22) grew In 0:3 Ga 0:7 As/ GaAs QW structures of 3 nm in well width by MBE at 350 -500 C and reported the effects of RTA at 700 -900 C on the PL intensity of the QW structures. Our results shown in Fig.…”

Section: Rta Resultsmentioning

confidence: 99%

Effect of Rapid Thermal Annealing on Photoluminescence Properties of Low-Temperature Grown InGaAs/GaAs Multiple Quantum Wells

Kajikawa

Nishimoto

Fujioka

et al. 2006

jjap

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Samples having In0.12Ga0.88As/GaAs multiple quantum well (MQW) structures were grown by molecular-beam epitaxy at substrate temperatures ranging from a normal temperature of 550 °C to a low temperature of 250 °C. When the samples were grown with low As4/Ga beam equivalent pressure ratios of 5–6, photoluminescence (PL) was observed in spite of low growth temperatures of 250–300 °C. Furthermore, after rapid thermal annealing (RTA) at approximately 900 °C, the intensities of PL from the samples grown at 300 and 250 °C were improved so as to become comparable to that from the as-grown sample grown at 550 °C. At the same time, the RTA caused blue shifts in PL peak energy for these low-temperature grown samples. From the shifts in PL peak energy, the diffusion length of In–Ga interdiffusion was estimated to be approximately 4 nm for the 900 °C RTA and the activation energy was estimated to be 2.2 ±0.6 eV in these low-temperature grown samples.

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“…The combination of these two pumps allows for biasing the VECSEL above threshold and modulating small amplitudes above this bias point, and is not dissimilar to direct-drive modulation of electrically injected lasers. 8 The bias power out of the cavity is maintained at 1 W or less to minimize thermal loading, which is ignored in the model. The low reflectance dielectric coating allows us to neglect etalon effects in the chip.…”

mentioning

confidence: 99%

Extraction of semiconductor microchip differential gain by use of optically pumped semiconductor laser

Walton

Terry

Hader

et al. 2009

Applied Physics Letters

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Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation

Cited by 44 publications

References 32 publications

Semiconductor optical amplifiers at 2.0‐µm wavelength on silicon

Semiconductor optical amplifiers at 2.0‐µm wavelength on silicon

Effect of Rapid Thermal Annealing on Photoluminescence Properties of Low-Temperature Grown InGaAs/GaAs Multiple Quantum Wells

Extraction of semiconductor microchip differential gain by use of optically pumped semiconductor laser

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