Strain‐Tunable Superconducting Field‐Effect Transistor with an Organic Strongly‐Correlated Electron System

Suda, Masayuki; Kawasugi, Yoshitaka; Minari, Takeo; Tsukagoshi, Kazuhito; Kato, Reìzo; Yamamoto, Hiroshi

doi:10.1002/adma.201305797

Cited by 32 publications

(30 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The Coulomb repulsion U is estimated to be comparable to [29,30] or larger than [26] the band width, implying that the strongly correlated electronic state is realized at ambient pressure. Applied pressure [28,31,32] or bending strain on thin films [33] can control the electron correlation parameter t/U . Moreover, the chemical potential µ can be tuned efficiently by applied gate voltage in the EDLT, allowing for investigation of the electronic structure of electron-and hole-doped Mott insulators on equal footing.…”

Section: Discussionmentioning

confidence: 99%

Electron–hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator

et al. 2016

Self Cite

View full text Add to dashboard Cite

It is widely recognized that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high Tc cuprates. The doping effect, including the electron–hole doping asymmetry, may be more straightforward in doped organic Mott insulators owing to their simple electronic structures. Here we investigate the doping asymmetry of an organic Mott insulator by carrying out electric-double-layer transistor measurements and using cluster perturbation theory. The calculations predict that strongly anisotropic suppression of the spectral weight results in the Fermi arc state under hole doping, while a relatively uniform spectral weight results in the emergence of a non-interacting-like Fermi surface (FS) in the electron-doped state. In accordance with the calculations, the experimentally observed Hall coefficients and resistivity anisotropy correspond to the pocket formed by the Fermi arcs under hole doping and to the non-interacting FS under electron doping.

show abstract

Section: Discussionmentioning

confidence: 99%

Electron–hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator

et al. 2016

Self Cite

View full text Add to dashboard Cite

show abstract

“…This could be due to the fact that, for the FETs, the thin-layer κ-Cl crystal laminated on the silicon substrate is subject to tensile strain (effectively negative in-plane pressure) by decreasing T because of the large difference in the thermal compressibility between the soft κ-Cl crystal and the incompressible substrate. 35,74,75 Such an effective pressure is expected to reduce the transfer integrals between BEDT-TTF dimers, enhancing the insulating character for the internal channel of the laminated κ-Cl of FET than the purely bulk crystal. On the other hand, the sheet conductivity of FET exceeds 10e 2 /h at 250 K, which corresponds to 0.2e 2 /h per one-layer BEDT-TTF channel, and is nearly an order of magnitude higher than the conductivity expected for a bulk crystal.…”

Section: Supporting Information E: High-t Transportmentioning

confidence: 99%

Critical Behavior in Doping-Driven Metal–Insulator Transition on Single-Crystalline Organic Mott-FET

et al. 2017

Self Cite

View full text Add to dashboard Cite

We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator κ-(BEDT-TTF)CuN(CN)Cl (κ-Cl). The FET shows a continuous metal-insulator transition (MIT) as electrostatic doping proceeds. The phase transition appears to involve two-step crossovers, one in Hall measurement and the other in conductivity measurement. The crossover in conductivity occurs around the conductance quantum e/h, and hence is not associated with "bad metal" behavior, which is in stark contrast to the MIT in half-filled organic Mott insulators or that in doped inorganic Mott insulators. Through in-depth scaling analysis of the conductivity, it is found that the above carrier transport properties in the vicinity of the MIT can be described by a high-temperature Mott quantum critical crossover, which is theoretically argued to be a ubiquitous feature of various types of Mott transitions.

show abstract

“…Multifunctional all‐organic sensors hold the promise of ubiquitous lightweight, flexible, and low‐cost solution processing. Among all organic materials, the unique charge transfer and the exchange interaction between donor and acceptor of organic charge‐transfer (CT) complexes and the bipolar properties of CT donor and acceptor enable them with multifunctionalities which can be tuned in a large scale by multiple external stimuli . The discovery of multiferroics in κ‐(BEDT‐TTF) 2 Cu[N(CN) 2 ]Cl (BEDT‐TTF stands for bis(ethylenedithio)tetrathiafulvalene) single crystal initiated the field of molecular multiferroics .…”

Section: Introductionmentioning

confidence: 99%

“…More recently, abrupt insulator–metal transition has been observed in κ‐(BEDT‐TTF) 2 Cu[N(CN) 2 ]Br by pulsed voltage stimuli . Moreover, strain stimuli can also induce superconductor–insulator transition in κ‐(BEDT‐TTF) 2 Cu[N(CN) 2 ]Cl single crystal . Consequently, the combination of ferroelectric PVDF polymer and molecular CT crystals with multiple external stimuli responses holds the promise to demonstrate multisensing functionalities and enhanced electromagnetic properties which makes them distinguished from those of inorganic oxide doped PVDF composite film.…”

Section: Introductionmentioning

confidence: 99%

Integrated Charge Transfer in Organic Ferroelectrics for Flexible Multisensing Materials

Ren

2016

Small

View full text Add to dashboard Cite

The ultimate or end point of functional materials development is the realization of strong coupling between all energy regimes (optical, electronic, magnetic, and elastic), enabling the same material to be utilized for multifunctionalities. However, the integration of multifunctionalities in soft materials with the existence of various coupling is still in its early stage. Here, the coupling between ferroelectricity and charge transfer by combining bis(ethylenedithio)tetrathiafulvalene-C60 charge-transfer crystals with ferroelectric polyvinylidene fluoride polymer matrix is reported, which enables external stimuli-controlled polarization, optoelectronic and magnetic field sensing properties. Such flexible composite films also display a superior strain-dependent capacitance and resistance change with a giant piezoresistance coefficient of 7.89 × 10(-6) Pa(-1) . This mutual coupled material with the realization of enhanced couplings across these energy domains opens up the potential for multisensing applications.

show abstract

Strain‐Tunable Superconducting Field‐Effect Transistor with an Organic Strongly‐Correlated Electron System

Cited by 32 publications

References 33 publications

Electron–hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator

Electron–hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator

Critical Behavior in Doping-Driven Metal–Insulator Transition on Single-Crystalline Organic Mott-FET

Integrated Charge Transfer in Organic Ferroelectrics for Flexible Multisensing Materials

Contact Info

Product

Resources

About