Strain scaling for CMOS

Bedell, Stephen W.; Khakifirooz, A.; Sadana, D. K.

doi:10.1557/mrs.2014.5

Cited by 81 publications

(52 citation statements)

References 15 publications

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“…Elastic strain is a promising tool for studying and tuning material properties, such as ferroelectricity, magnetism, catalysis, and transport properties 3,5,[19][20][21] , in addition to the methods such as chemical strain or altering the material structures, owing to the universal coupling between the crystal structure and electronic structures in materials 1,22 . This is unfortunately difficult for h-LuFeO 3 , which is unstable in bulk but can be stabilized in epitaxial thin films: The lack of structurally compatible substrates makes the growth of defect-free films impossible and makes the epitaxial strain difficult to control 9,10,23,24 and there are no bulk counterparts to compare with since the stand-alone hexagonal phase of LuFeO 3 is unstable.…”

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confidence: 99%

Effects of biaxial strain on the improper multiferroicity inh−LuFeO3films studied using the restrained thermal expansion method

et al. 2017

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Elastic strain is potentially an important approach in tuning the properties of the improperly multiferroic hexagonal ferrites, the details of which have however been elusive due to the experimental difficulties. Employing the method of restrained thermal expansion, we have studied the effect of isothermal biaxial strain in the basal plane of h-LuFeO3 (001) films. The results indicate that a compressive biaxial strain significantly enhances the ferrodistortion, and the effect is larger at higher temperatures. The compressive biaxial strain and the enhanced ferrodistortion together, cause an increase in the electric polarization and a reduction in the canting of the weak ferromagnetic moments in h-LuFeO3, according to our first principle calculations. These findings are important for understanding the strain effect as well as the coupling between the lattice and the improper multiferroicity in h-LuFeO3. The experimental elucidation of the strain effect in h-LuFeO3 films also suggests that the restrained thermal expansion can be a viable method to unravel the strain effect in many other epitaxial thin film materials.

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confidence: 99%

Effects of biaxial strain on the improper multiferroicity inh−LuFeO3films studied using the restrained thermal expansion method

et al. 2017

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“…Constraint (30) gives the number of data centers. Constraint (31) gives the number of virtual nodes from the same request that can be colocated in the same data centre. (32) Constraint (32) ensures that each virtual node is only embedded once in the network.…”

Section: Virtual Network Embeddingmentioning

confidence: 99%

“…CMOS has moved out of "Classical (geometrically driven) Scaling" where performance was driven by new litho tools leading to smaller transistors that could be easily projected. It is now in the era of "Equivalent Scaling" where performance is driven by changes in technology such as strained silicon [31], high-K/metal gate [32], multi-gate transistors [33] and integration of germanium and compound semiconductors [34]. There is some geometric scaling but this is tapering off and by 2020 will be irrelevant.…”

Section: Equipment Power Consumption Improvements In 2020mentioning

confidence: 99%

GreenTouch GreenMeter Core Network Energy-Efficiency Improvement Measures and Optimization

Elmirghani

Klein

Hinton

et al. 2018

J. Opt. Commun. Netw.

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“…With the increasing number of materials and possibilities of functionalization and combining them in heterostructures [6], they constitute a versatile class of materials with a large range of possible applications within nanotechnology. Strain engineering is a well established tool to optimize the electronic properties of semiconductors [7], and is particularly relevant for 2D materials due to their ability to sustain much larger strain magnitudes than bulk crystals [8,9]. Strain magnitudes above 10% can be achieved in graphene without damaging the material [10] and the effect of strain on the bandstructure has been studied theoretically [11,12] and experimentally [13,14].…”

Section: Introductionmentioning

confidence: 99%

Strain and electric field tuning of 2D hexagonal boron arsenide

Brems

Willatzen

2019

New J. Phys.

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Group theory and density functional theory (DFT) methods are combined to obtain compact and accurate k·p Hamiltonians that describe the bandstructures around the K and G points for the 2D material hexagonal boron arsenide predicted to be an important low-bandgap material for electric, thermoelectric, and piezoelectric properties that supplements the well-studied 2D material hexagonal boron nitride. Hexagonal boron arsenide is a direct bandgap material with band extrema at the K point. The bandgap becomes indirect with a conduction band minimum at the G point subject to a strong electric field or biaxial strain. At even higher electric field strengths (approximately 0.75 V Å −1 ) or a large strain (14%) 2D hexagonal boron arsenide becomes metallic. Our k·p models include to leading orders the influence of strain, electric, and magnetic fields. Excellent qualitative and quantitative agreement between DFT and k·p predictions are demonstrated for different types of strain and electric fields.

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Strain scaling for CMOS

Abstract: Abstract

Cited by 81 publications

References 15 publications

Effects of biaxial strain on the improper multiferroicity inh−LuFeO3films studied using the restrained thermal expansion method

Effects of biaxial strain on the improper multiferroicity inh−LuFeO3films studied using the restrained thermal expansion method

GreenTouch GreenMeter Core Network Energy-Efficiency Improvement Measures and Optimization

Strain and electric field tuning of 2D hexagonal boron arsenide

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