Strain-polarization coupling mechanism of enhanced conductivity at the grain boundaries in BiFeO3thin films

Аликин, Д. О.; Fomichоv, Yevhen M.; Reis, S. P.; Abramov, A. S.; Chezganov, D. S.; Shur, V. Ya.; Eliseev, Eugene A.; Kalinin, Sergei V.; Morozovska, Anna N.; Araújo, E. B.; Kholkin, Andréi L.

doi:10.1016/j.apmt.2020.100740

Cited by 7 publications

(11 citation statements)

References 70 publications

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“…The sub-surface charge can be associated with accumulation of charged defects near the surface [12,59] and/or alignment of defect dipoles under the intrinsic domain depolarizing field. [6,60,61] The existence of the mobile charge defects in BFO is well-known, while details of the defect chemistry are still under discussion, [8,62,63] because the defect composition is very sensitive to the atmosphere and sample preparation conditions.…”

Section: Structural and Chemical Characterizationmentioning

confidence: 99%

“…[17,[27][28][29][30] Accumulation of charged defects at the domain walls and grain boundaries has been proven experimentally in bismuth ferrite by scanning transmission electron microscopy and conductive atomic force microscopy measurements. [11,12] Charged defects were shown to impact the interface conductivity and are believed to influence domain wall motion. [8,11,12] At the beginning of 90s, piezoresponse force microscopy (PFM) has been first used to study piezoelectric properties and polarization reversal with a high spatial resolution down to a few nanometers.…”

Section: Introductionmentioning

confidence: 99%

“…[11,12] Charged defects were shown to impact the interface conductivity and are believed to influence domain wall motion. [8,11,12] At the beginning of 90s, piezoresponse force microscopy (PFM) has been first used to study piezoelectric properties and polarization reversal with a high spatial resolution down to a few nanometers. [31,32] The local switching can be performed by a conductive scanning probe microscopy tip with in situ monitoring the piezoelectric response underneath the SPM probe tip biased by a varying voltage (so-called "switching spectroscopy" or "voltage spectroscopy").…”

Section: Introductionmentioning

confidence: 99%

“…[6][7][8][9][10] The surfaces and interfaces are directly influenced by the nearby defects, and bulk properties are rendered by the defects via multiple mechanisms. [11,12] Up to date, the number of techniques allowing studies of defects with a high spatial resolution is limited, and they are mainly based on local monitoring of the crystalline structure or chemical composition. [13][14][15][16] Most of these local compositional methods like transmission electron microscopy, X-ray tomography, electron holography, etc.…”

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confidence: 99%

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Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy

et al. 2021

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information storage, [1,2] memristors based on tunneling, [3,4] energy storage devices, [5] etc. Tailoring the defect structure permits fine tuning of the functional properties of ferroelectrics. [6][7][8][9][10] The surfaces and interfaces are directly influenced by the nearby defects, and bulk properties are rendered by the defects via multiple mechanisms. [11,12] Up to date, the number of techniques allowing studies of defects with a high spatial resolution is limited, and they are mainly based on local monitoring of the crystalline structure or chemical composition. [13][14][15][16] Most of these local compositional methods like transmission electron microscopy, X-ray tomography, electron holography, etc. do not have a high enough sensitivity or need challenging sample preparation. [13] The optical method of second harmonic generation can be used to monitor the defect concentration and off-stoichiometry, [16] however it is limited in resolving the type of charged defects and yields only micrometer-scale spatial resolution. Thus, the novel experimental approaches allowing accurate measurement of the defect concentration and/or corresponded functional properties at the nanoscale are highly desirable.In ferroelectrics, charged defects affect polarization reversal as they directly participate in the screening of the depolarization electric field [8,[17][18][19][20] since they can become mobile Monitoring the charged defect concentration at the nanoscale is of critical importance for both the fundamental science and applications of ferroelectrics. However, up-to-date, high-resolution study methods for the investigation of structural defects, such as transmission electron microscopy, X-ray tomography, etc., are expensive and demand complicated sample preparation. With an example of the lanthanum-doped bismuth ferrite ceramics, a novel method is proposed based on the switching spectroscopy piezoresponse force microscopy (SSPFM) that allows probing the electric potential from buried subsurface charged defects in the ferroelectric materials with a nanometer-scale spatial resolution. When compared with the compositionsensitive methods, such as neutron diffraction, X-ray photoelectron spectroscopy, and local time-of-flight secondary ion mass spectrometry, the SSPFM sensitivity to the variation of the electric potential from the charged defects is shown to be equivalent to less than 0.3 at% of the defect concentration. Additionally, the possibility to locally evaluate dynamics of the polarization screening caused by the charged defects is demonstrated, which is of significant interest for further understanding defect-mediated processes in ferroelectrics.

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Section: Structural and Chemical Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy

et al. 2021

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“…The major problem in the macroscopic investigations of charge transport is that the subject becomes more and more difficult, moving away from the ideal semiconductor case. Electrode-material interfaces [ 17 ] and elements of microstructure such as domain walls [ 34 ], twin and grain boundaries [ 35 , 36 ], dislocations [ 1 ]—all of those can impact significantly current transport and RS. Segregation of the structural defects at the domain walls [ 34 ], grain boundaries [ 36 ], and at the secondary phase locations [ 37 ] can modify the type of conductivity [ 38 ] and create a net of distributed channels for charge transport.…”

Section: Introductionmentioning

confidence: 99%

Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite

Abramov

Slautin

Pryakhina

et al. 2023

Sensors

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Ferroelectric materials attract much attention for applications in resistive memory devices due to the large current difference between insulating and conductive states and the ability of carefully controlling electronic transport via the polarization set-up. Bismuth ferrite films are of special interest due to the combination of high spontaneous polarization and antiferromagnetism, implying the possibility to provide multiple physical mechanisms for data storage and operations. Macroscopic conductivity measurements are often hampered to unambiguously characterize the electric transport, because of the strong influence of the diverse material microstructure. Here, we studied the electronic transport and resistive switching phenomena in polycrystalline bismuth ferrite using advanced conductive atomic force microscopy (CAFM) at different temperatures and electric fields. The new approach to the CAFM spectroscopy and corresponding data analysis are proposed, which allow deep insight into the material band structure at high lateral resolution. Contrary to many studies via macroscopic methods, postulating electromigration of the oxygen vacancies, we demonstrate resistive switching in bismuth ferrite to be caused by the pure electronic processes of trapping/releasing electrons and injection of the electrons by the scanning probe microscopy tip. The electronic transport was shown to be comprehensively described by the combination of the space charge limited current model, while a Schottky barrier at the interface is less important due to the presence of the built-in subsurface charge.

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Quantitative Mapping of Chemical Defects at Charged Grain Boundaries in a Ferroelectric Oxide

Hunnestad

Schultheiß

et al. 2023

Advanced Materials

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Polar discontinuities, as well as compositional and structural changes at oxide interfaces can give rise to a large variety of electronic and ionic phenomena. In contrast to earlier work focused on domain walls and epitaxial systems, this work investigates the relation between polar discontinuities and the local chemistry at grain boundaries in polycrystalline ferroelectric ErMnO3. Using orientation mapping and scanning probe microscopy (SPM) techniques, the polycrystalline material is demonstrated to develop charged grain boundaries with enhanced electronic conductance. By performing atom probe tomography (APT) measurements, an enrichment of erbium and a depletion of oxygen at all grain boundaries are found. The observed compositional changes translate into a charge that exceeds possible polarization‐driven effects, demonstrating that structural phenomena rather than electrostatics determine the local chemical composition and related changes in the electronic transport behavior. The study shows that the charged grain boundaries behave distinctly different from charged domain walls, giving additional opportunities for property engineering at polar oxide interfaces.

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Strain-polarization coupling mechanism of enhanced conductivity at the grain boundaries in BiFeO3thin films

Cited by 7 publications

References 70 publications

Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy

Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy

Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite

Quantitative Mapping of Chemical Defects at Charged Grain Boundaries in a Ferroelectric Oxide

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