In the framework of the Landau-Ginzburg-Devonshire (LGD) approach we studied finite size effects of the phase diagram and domain structure evolution in spherical nanoparticles of uniaxial ferroelectric. The particle surface is covered by a layer of screening charge characterized by finite screening length. The phase diagram, calculated in coordinates "particle radius -screening length" has a wide region of versatile poly-domain structures separating single-domain ferroelectric and nonpolar paraelectric phases. Unexpectedly, we revealed a region of stable irregular labyrinthine domains in the nanoparticles of uniaxial ferroelectric CuInP2S6 with the first order paraelectric-ferroelectric phase transition. We established that the origin of labyrinthine domains is the mutual balance of LGD, polarization gradient and electrostatic energies. The branching of the domain walls appears and increases rapidly when the polarization gradient energy decreases below the critical value.Allowing for the generality of LGD approach, we expect that the gradient-induced morphological transition can be the source of labyrinthine domains appearance in many spatially-confined ferroics with long-range order parameter, including relaxors, ferromagnetics, antiferrodistortive materials and materials with incommensurate ferroic phases.

Using Landau-Ginzburg-Devonshire theory, we considered the impact of the flexoelectro-chemical coupling on the size effects inpolar properties and phase transitions of thin ferroelectric films with a layer of elastic defects.We investigated a typical case, when defects fill a thin layer below the top film surface with a constant concentration creating an additional gradient of elastic fields. The defective surface of the film is not covered with an electrode, but instead with an ultra-thin layer of ambient screening charges, characterized by a surface screening length. This geometry is typical for the scanning probe piezoelectric force microscopy.Obtained results revealed an unexpectedly strong effect of the joint action of Vegard stresses and flexoelectric effect (shortly flexo-chemical coupling) on the ferroelectric transition temperature, distribution of the spontaneous polarization and elastic fields, domain wall structure and period in thin PbTiO 3 films containing a layer of elastic defects. A nontrivial result is the ferroelectricity persisting at film thicknesses below 4 nm, temperatures lower than 350 K and relatively high surface screening length (~0.1 nm). The origin of this phenomenon is the re-building of the domain structure in the film (namely the cross-over from c-domain stripes to a-type closure domains) when its thickness decreases below 4 nm, conditioned by the flexoelectric coupling and facilitated by negative Vegard effect. For positive Vegard effect, thicker films exhibit the appearance of pronounced maxima on the thickness dependence of the transition temperature, whose position and height can be controlled by the defect type and concentration. The revealed features may have important implications for miniaturization of ferroelectric-based devices.