Strain-induced<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>g</mml:mi></mml:math>-factor tuning in single InGaAs/GaAs quantum dots

Tholen, Hmga Hans; Wildmann, Johannes S.; Rastelli, Armando; Trotta, Rinaldo; Pryor, Craig; Zallo, Eugenio; Schmidt, Oliver G.; Koenraad, PM Paul; Silov, A. Yu.

doi:10.1103/physrevb.94.245301

Cited by 17 publications

(22 citation statements)

References 32 publications

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“…Some efforts have been made to characterize the exciton g-factor [9][10][11] and the g-factor tensor of confined carriers in QDs through optical methods [12][13][14][15][16]. In self-assemble QDs, the electron and hole g-factors are related to the size, shape and composition [17,18], and can be tuned by the external field [19][20][21][22][23][24]. Additionally, the g-factors usually vary for different excitons due to the Coulomb interactions [7].…”

Section: Introductionmentioning

confidence: 99%

Electron and Hole g Tensors of Neutral and Charged Excitons in Single Quantum Dots by High-Resolution Photocurrent Spectroscopy

Peng

Xie

et al. 2020

Phys. Rev. Applied

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We report a high-resolution photocurrent (PC) spectroscopy of a single self-assembled InAs/GaAs quantum dot (QD) embedded in an n-i-Schottky device with an applied vector magnetic field. The PC spectra of positively charged exciton (X +) and neutral exciton (X 0) are obtained by two-color resonant excitation. With an applied magnetic field in Voigt geometry, the double Λ energy level structure of X + and the dark states of X 0 are observed in PC spectra clearly. In Faraday geometry, the PC amplitude of X + decreases and then quenches with the increasing of the magnetic field, which provides a new way to determine the relative sign of the electron and the hole g-factors. With an applied vector magnetic field, the electron and the hole g-factor tensors of X + and X 0 are obtained. The anisotropy of the hole g-factors of both X + and X 0 is larger than that of the electron.

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Section: Introductionmentioning

confidence: 99%

Electron and Hole g Tensors of Neutral and Charged Excitons in Single Quantum Dots by High-Resolution Photocurrent Spectroscopy

Peng

Xie

et al. 2020

Phys. Rev. Applied

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“…Hence, for engineering the magnetic properties of a QD precise measurements are crucial. Usually, to extract the g factors of e − and h + confined in single QDs from photoluminescence (PL) measurements a single-particle (SP) Zeeman Hamiltonian 21 is employed 18,19,22,23 (for details about the method we refer the interested reader to Ref. 24 ).…”

Section: Introductionmentioning

confidence: 99%

Single-particle-picture breakdown in laterally weakly confining GaAs quantum dots

et al. 2019

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We present a detailed investigation of different excitonic states weakly confined in single GaAs/AlGaAs quantum dots obtained by the Al droplet-etching method. For our analysis we make use of temperature-, polarization-and magnetic field-dependent µ-photoluminescence measurements, which allow us to identify different excited states of the quantum dot system. Besides that, we present a comprehensive analysis of g-factors and diamagnetic coefficients of charged and neutral excitonic states in Voigt and Faraday configuration. Supported by theoretical calculations by the Configuration interaction method, we show that the widely used single-particle Zeeman Hamiltonian cannot be used to extract reliable values of the g-factors of the constituent particles from excitonic transition measurements. arXiv:1909.04906v1 [cond-mat.mes-hall]

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“…where g is the exciton g-factor and µ B the Bohr magneton. We approximate the diamagnetic shift with a parabola with prefactor γ 64,65 . The fine structure splitting of the studied QDs 50 is negligibly small in this con- text.…”

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confidence: 99%

Correlations between optical properties and Voronoi-cell area of quantum dots

et al. 2019

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A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential. Understanding the connection between the optical properties of a QD and the growth process is therefore important. Here, we show for GaAs QDs, grown by infilling droplet-etched nano-holes, that the emission wavelength, the neutral-to-charged exciton splitting, and the diamagnetic shift are strongly correlated with the capture zone-area, an important concept from nucleation theory. We show that the capture-zone model applies to the growth of this system even in the limit of a low QD-density in which atoms diffuse over µm-distances. The strong correlations between the various QD parameters facilitate preselection of QDs for applications with specific requirements on the QD properties; they also suggest that a spectrally narrowed QD distribution will result if QD growth on a regular lattice can be achieved. arXiv:1902.10145v3 [cond-mat.mes-hall]

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Strain-inducedg-factor tuning in single InGaAs/GaAs quantum dots

Abstract: . (2016). Straininduced g-factor tuning in single InGaAs/GaAs quantum dots.

Cited by 17 publications

References 32 publications

Electron and Hole g Tensors of Neutral and Charged Excitons in Single Quantum Dots by High-Resolution Photocurrent Spectroscopy

Electron and Hole g Tensors of Neutral and Charged Excitons in Single Quantum Dots by High-Resolution Photocurrent Spectroscopy

Single-particle-picture breakdown in laterally weakly confining GaAs quantum dots

Correlations between optical properties and Voronoi-cell area of quantum dots

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