Strain-induced effects in p-type Si whiskers at low temperatures

Druzhinin, A. A.; Ostrovskii, Igor; Khoverko, Yuriy; Koretskii, Roman

doi:10.1016/j.mssp.2015.07.015

Cited by 27 publications

(18 citation statements)

References 28 publications

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“…This can be explained by the prevalence of surface conductance in transverse specimen geometry. The similar phenomenon was observed in Si whiskers, where increase of dopant impurities approaching the whisker surface was revealed [24].…”

Section: Resultssupporting

confidence: 76%

Negative magnetoresistance in indium antimonide whiskers doped with tin

Druzhinin

Ostrovskii

Khoverko

et al. 2016

Low Temperature Physics

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was studied in longitudinal magnetic field 0-14 T in the temperature range 4.2-77 K. The negative magnetoresistance reaches about 50% for InSb whiskers with impurity concentration in the vicinity to the metal-insulator transition. The negative magnetoresistance decreases to 35 and 25% for crystals with Sn concentration from the metal and dielectric side of the transition. The longitudinal magnetoresistance twice crosses the axis of the magnetic field induction for the lightly doped crystals. The behavior of the negative magnetoresistance could be explained by the existence of classical size effect, in particular boundary scattering in the subsurface whisker layer.

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Section: Resultssupporting

confidence: 76%

Negative magnetoresistance in indium antimonide whiskers doped with tin

Druzhinin

Ostrovskii

Khoverko

et al. 2016

Low Temperature Physics

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“…need high-value special equipments and materials due to the use of the complex microelectronic technologies [6][7][8].…”

Section: Sensitive Element Of Multifunctional Sensor For Measuring Tementioning

confidence: 99%

Sensitive element of multifunctional sensor for measuring temperature, strain and magnetic field induction

et al. 2017

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Sensitive element of multifunctional sensor for measuring temperature, strain and magnetic field induction has been developed based on the studies of electrical conductivity and magnetoresistance of silicon and germanium microcrystals in the temperature range 4.2—70 K, strain ±1.5×10–3 rel.un. and magnetic fields of 0—14 T. The feature of the sensitive element is the using of the p- and n-type conductivity germanium microcrystals as mechanical and magnetic field sensors, respectively, and the p-type silicon microcrystal — as temperature sensor. That allows providing the compensation of temperature influence on piezoresistance and on sensitivity to the magnetic field.

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“…Рîзвèòîê ñóчаñíîї íаóêè і òåõíіêè вèñóває íа ïåðшèй ïëаí ïðîбëåмó ñòвîðåííÿ міíіаòюðíèõ вèñîêîчóòëèвèõ ñåíñîðів мåõаíічíèõ вåëèчèí, ïðацåздаòíèõ в ñêëадíèõ óмîваõ, зîêðåма за íèзьêîї òåмïåðаòóðè òа в ñèëьíèõ маãíіòíèõ ïîëÿõ [1][2][3][4]. Нèзьêîòåмïåðаòóðíі дîñëіджåííÿ дåфîðмаційíî-ñòèмóëьîваíèõ åфåêòів (ï'єзîîïіð, ï'єзîмаãíåòîîïіð) в ëåãîваíèõ íаïівïðîвідíèêаõ ïîбëèзó ïåðåõîдó «мåòаë -діåëåêòðèê» мîжóòь даòè іíфîðмацію ïðî фізèчíі вëаñòèвîñòі òаêèõ маòåðіаëів, ÿêа мîжå бóòè вèêîðèñòаíа дëÿ ñòвîðåííÿ íа їõ îñíîві вèñîêîчóòëèвèõ ñåíñîðів фізèчíèõ вåëèчèí, ïðацåздаòíèõ за íèзьêèõ òåмïåðаòóð [2,3]. Äîñëіджåííÿ åëåêòðîïðîвідíîñòі òа ï'єзîîïîðó íèòêîïîдібíèõ êðèñòаëів êðåмíію (ÍÊ) в шèðîêîмó іíòåðваëі òåмïåðаòóðè òа дåфîðмації дає змîãó вèзíачèòè ðîбîчèй іíòåðваë òåмïåðаòóð ñåíñîðів фізèчíèõ вåëèчèí, зîêðåма мåõаíічíèõ, ñòвîðåíèõ íа їõ îñíîві.…”

Section: чóòливий елеменò äвофóнêційного сенсора магніòного поля òа äunclassified

“…Äëÿ ñòвîðåííÿ ñåíñîðів òèñêó, дåфîðмацій òîщî важëèвèм ïаðамåòðîм є êîåфіцієíò òåíзîчóòëèвîñòі НÊ, щî вèзíачаєòьñÿ зміíîю îïîðó êðèñòаëа вíаñëідîê дåфîðмації. Ó вèïадêó ñòвîðåííÿ ñåíñîðів дëÿ іíòåðваëó íèзьêèõ òåмïåðаòóð ñëід вðаõîвóваòè, щî åëåêòðîфізèчíі вëаñòèвîñòі íаïівïðîвідíèêів вèзíачаюòьñÿ ñòóïåíåм ëåãóваííÿ і òèïîм ëåãóючîї дîмішêè, ñòóïåíåм êîмïåíñації і міðîю íабëèжåííÿ дî ïåðåõîдó «мåòаë -діåëåêòðèê» [3]. Цå зóмîвëює íåîбõідíіñòь вèвчåííÿ вïëèвó ñòóïåíÿ ëåãóваííÿ òа òåмïåðаòóðíîї ïîвåдіíêè ëåãóючîї дîмішêè íа åëåêòðîïðîвідíіñòь íаïівïðîвідíèêîвèõ êðèñòаëів êðåмíію òа її зміíè ïід вïëèвîм ñòèñêó чè ðîзòÿãó êðèñòаëів [4].…”

Section: чóòливий елеменò äвофóнêційного сенсора магніòного поля òа äunclassified

Two-functional sensor of magnetic field and deformation based on Si <B, Ni> microcrystals

et al. 2017

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This research investigates complex studies of electrical conductivity and magnetoresistance of both strain and non-strain samples of p-type Si whiskers with different degrees of doping with boron and nickel in a wide temperature range from 4.2 to 300 K. It is established that the greatest manifestation of the piezoresistive effect is observed in the vicinity of concentrations which correspond to the metal-insulator transition. Investigation of the magnetoresistance of crystals was carried out in the range of fields with induction up to 14 T. Whiskers of silicon with a doping concentration of boron of 5•1018 cm-3 can be used as a sensitive element for two-functional deformation and magnetic field sensors in difficult operating conditions. Microwires for research were grown by chemical transport reactions with the crystallographic orientation <111> and with the concentration of charge carriers, which corresponds to the vicinity of metal-insulator transition (5•1018 cm-3). The nickel doping was conducted by the low-temperature diffusion from the precipitated film on the surface of the crystal. The uniaxial strain of Si microcrystals was carried out by fixing them on substrates with the different coefficient of thermal. The metallic-type temperature dependence on the resistivity is typical for heavily doped silicon microcrystals (with the bor concentration >5•1018 cm-3) for both deformed and non deformed samples. Significant influence of the deformation on characteristics of microcrystals wasn't found. The maximum magnetoresistance of such samples doesn't exceed 4% in magnetic fields with induction of 14 T at the temperature of liquefied helium. The resistivity of Si crystals with ρ300K = 0.012 Ohm•cm (which corresponds to the dielectric side of MIT) is reduced in several times at the temperature of liquefied helium and under the uniaxial deformation. Decreasing of boron concentration reduces this effect. This is also confirmed by the calculation of the experimental data temperature dependence of gauge factor for these samples in helium temperatures. The gauge factor is K4.2K=165 at the compressive strain ε=–5.29•10-3 RVUs. It is also found that the deformation of these samples has significant impact on characteristics of the magnetoresistance and the value of the magnetoresistance decreased almost in 3 times. The undeformed samples of Si p-type microwire doped with nickel and boron concentration in the vicinity of dielectric side to MIT can be used as the sensing element of magnetic field. The significant magnetic field dependence on magnetoresistance is observed in such crystals which can reach a value of 250% at 14 T.

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Strain-induced effects in p-type Si whiskers at low temperatures

Cited by 27 publications

References 28 publications

Negative magnetoresistance in indium antimonide whiskers doped with tin

Negative magnetoresistance in indium antimonide whiskers doped with tin

Sensitive element of multifunctional sensor for measuring temperature, strain and magnetic field induction

Two-functional sensor of magnetic field and deformation based on Si <B, Ni> microcrystals

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