Strain-induced control of a pillar cavity-GaAs single quantum dot photon source

Abstract

Herein, we present the calculated strain-induced control of single GaAs/AlGaAs quantum dots (QDs) integrated into semiconductor micropillar cavities. We show precise energy control of individual single GaAs QD excitons under multi-modal stress fields of tailored micropillar optomechanical resonators. Further, using a three-dimensional envelope-function model, we evaluated the quantum mechanical correction in the QD band structures depending on their geometrical shape asymmetries and, more interestingly, on the practical degree of Al interdiffusion. Our theoretical calculations provide the practical quantum error margins, obtained by evaluating Al-interdiffused QDs that were engineered through a front-edge droplet epitaxy technique, for tuning engineered QD single-photon sources, facilitating a scalable on-chip integration of QD entangled photons.

Comparative Chemico-Physical Analyses of Strain-Free GaAs/Al0.3Ga0.7As Quantum Dots Grown by Droplet Epitaxy

“…The individual Al gradients result in different quantum confinement characteristics in the DE QD band structures. We calculated the quantum corrections to the QD exciton energies using a 3D envelope-function model in the k p perturbation theory [ 31 ]. The QD energy of a single electron–hole pair is the sum of the GaAs bulk bandgap , the sub-band energies of the carriers, and the direct Coulomb interaction energy J : …”