Strain in AlGaN layer studied by Rutherford backscattering/channeling and x-ray diffraction

Wu, MF; Yao, Shenglai; Vantomme, André; Hogg, Susan; Langouche, Guido; Li, J; Gy, Zhang

doi:10.1116/1.590780

Cited by 16 publications

(11 citation statements)

References 22 publications

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“…In the unirradiated sample, the layers are partially relaxed and the AlGaN layer is still under a tensile strain of ε t = −0.55%. The χ min of the AlGaN layer is 12% and the GaN layer is 18% (23)(24)(25). This shows that the samples have a high defect density.…”

Section: Rbs/channelingmentioning

confidence: 90%

Strain modification of AlGaN layers using swift heavy ions

Sathish

Pathak

Dhamodaran

et al. 2011

Radiation Effects and Defects in Solids

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Epitaxial AlGaN/GaN layers grown by molecular beam epitaxy (MBE) on SiC substrates were irradiated with 150MeV Ag ions at a fluence of 5 x 10(12) ions/cm(2). The samples used in this study are 50 nm Al(0.2)Ga(0.8)N/1 nm AlN/1 mu m GaN/0.1 mu m AlN grown on SI 4H-SiC. Rutherford backscattering spectrometry/channeling strain measurements were carried out on off-normal axis of irradiated and unirradiated samples. In an as-grown sample, AlGaN layer is partially relaxed with a small tensile strain. After irradiation, this strain increases by 0.22% in AlGaN layer. Incident ion energy dependence of dechanneling parameter shows E(1/2) dependence, which corresponds to the dislocations. Defect densities were calculated from the E(1/2) graph. As a result of irradiation, the defect density increased on both GaN and AlGaN layers. The effect of irradiation induced-damages are analyzed as a function of material properties. Observed results from different characterization techniques such as RBS/channeling, high-resolution XRD and AFM are compared and complemented with each other to deduce the information. Possible mechanisms responsible for the observations have been discussed in detail

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Section: Rbs/channelingmentioning

confidence: 90%

Strain modification of AlGaN layers using swift heavy ions

Sathish

Pathak

Dhamodaran

et al. 2011

Radiation Effects and Defects in Solids

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“…Nowadays, silicides with a high degree of perfection can be fabricated on Si(111) in different ways: co-deposition, 12 sequential deposition, 8 -10 thin template layer, 8,9 solid phase epitaxy, 11 molecular beam epitaxy, 13 reactive deposition epitaxy, 14 ion implantation, 15 and ion beam epitaxy. 16 For thick layers, reactive deposition epitaxy or template layers provide the best surfaces because they produce a lower density of pinholes, whereas for low coverages, all methods give well-reconstructed surfaces.…”

Section: Methodsmentioning

confidence: 99%

A study of the formation of yttrium silicides epitaxially grown on Si(111)

Rogero¹,

Polop²,

Sacedón³

et al. 2004

Surface & Interface Analysis

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We present an investigation of the growth of ultrathin yttrium silicide films (YSi 2 ) epitaxially grown on n-type Si(111) as a function of the thermal treatment. Combining STM images with a quantitative spot profile LEED analysis we have studied the crystalline quality of the YSi 2−x (0 ≤ x ≤ 0.3) and we have related it to the silicide formation temperature. We have distinguished a short temperature range for the formation of the two-dimensional p(1 × 1) YSi 2 , and three growth regimes for the three-dimensional ( p 3 × p 3)R30• YSi 1.7 . For annealing temperatures lower than 375• C the silicide is not completely formed;at around 420 • C the surface exhibits long atomically flat terraces, and for temperatures higher than 525• C a significant increase in the number of defects takes place.

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“…This method provides information about the Al content indirectly, since it is deduced from the relative shift of the Al x Ga 1 − x N reflection with respect to the GaN one. However, as it is well known, the shift in the peak can also be influenced by the presence of strain within the layer, making the analysis ambiguous [9]. Another disadvantage of the XRD analysis is that an Al profile analysis is not straightforward and may require tedious techniques, such as changing the incidence angle to explore different layer depths.…”

Section: Introductionmentioning

confidence: 98%

“…The suitability of these techniques to study GaNbased materials has been already reported [11]. Among IBA methods, Rutherford backscattering spectrometry (RBS) has been used to contrast with XRD analysis in AlGaN layers [9] and superlattices [12]. The advantage of RBS is that it can provide additional structural information by performing RBS in channelling mode (RBS/C) [13,14].…”

Section: Introductionmentioning

confidence: 99%