Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions

We review the technology of Ge 1−x Sn x -related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge 1−x Sn x -related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge 1−x Sn x -related material thin films and the studies of the electronic properties of thin films, metals/Ge 1−x Sn x , and insulators/Ge 1−x Sn x interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge 1−x Sn x -related materials, as well as the reported performances of electronic devices using Ge 1−x Sn x related materials.

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“…Theoretical calculations for laser applications of Ge 1−x Sn x and Ge 1−x−y Si x Sn y have been reported [85,[168][169][170][171][172].…”

Section: Optoelectronic Device Applicationsmentioning

confidence: 99%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Asano

et al. 2016

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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“…For example, the devices can be designed based either on layer structures, such as single or multiple quantum wells, or based on nanocluster (quantum dot) structures. The control of their properties can be done by varying the composition of the alloys, such as Si 1−x Ge x , Ge 1−x Sn x , Si 1−x Sn x and Ge 1−x−y Si x Sn y , as described in experimental and theoretical investigations [1][2][3][4][5] , which indicated a wide tunability of the band gap of these alloys. For instance, the GeSn alloys can be engineered to cover the wavelength range form 1.5 to 8 µm for interband transitions, and from 8 to 200 µm for conduction-or valence-intersubband transitions 6 , indicating a huge potential for optoelectronic applications -as laser diodes, photodetectors, and electro-optical modulators.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and optical properties of Sn and SnGe quantum dots

Moontragoon¹,

Vukmirović²,

Ikonić³

et al. 2008

Journal of Applied Physics

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Self-assembled quantum dots in a Si–Ge–Sn system attract research attention as possible direct band gap materials, compatible with Si-based technology, with potential applications in optoelectronics. In this work, the electronic structure near the Γ point and interband optical matrix elements of strained Sn and SnGe quantum dots in a Si or Ge matrix are calculated using the eight-band k⋅p method, and the competing L-valley conduction band states were found by the effective mass method. The strain distribution in the dots was found with the continuum mechanical model. The parameters required for the k⋅p or effective mass calculation for Sn were extracted by fitting to the energy band structure calculated by the nonlocal empirical pseudopotential method. The calculations show that the self-assembled Sn/Si dots, sized between 4 and 12 nm, have indirect interband transition energies between 0.8 and 0.4 eV and direct interband transitions between 2.5 and 2.0 eV. In particular, the actually grown, approximately cylindrical Sn dots in Si with a diameter and height of about 5 nm are calculated to have an indirect transition (to the L valley) of about 0.7 eV, which agrees very well with experimental results. Similar good agreement with the experiment was also found for SnGe dots grown on Si. However, neither of these is predicted to be direct band gap materials, in contrast to some earlier expectations.

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“…The Si-Ge-Sn alloys are considered as an interesting material for future optoelectronic semiconductor devices, compatible with Si technology [1]. Control of their properties can be achieved by varying the alloy composition, as found in experimental and theoretical investigations [2][3][4][5][6][7][8], indicating their potential for optoelectronic applications.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and optical transitions in Sn and SnGe quantum dots in a Si matrix

Moontragoon

Vukmirović

Ikonić

et al. 2009

Microelectronics Journal

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Self-assembled quantum dots in the Si-Ge-Sn system have attracted research attention as possible direct band gap materials, compatible with Si-based technology, with potential applications in optoelectronics. In this work, the electronic structure near the Γ-point and the interband optical matrix elements of strained Sn and SnGe quantum dots in a Si matrix are calculated using the eight-band k.p method, and the competing L-valley conduction band states were found by the effective mass method. The strain distribution in the dots was found within the continuum mechanical model. The bulk band-structure parameters, required for the k.p or effective mass calculation for Sn were extracted by fitting to the energy band structure calculated by the non-local empirical pseudopotential method (EPM). The calculations show that the self-assembled Sn/Si dots, with sizes between 4 nm and 12 nm, have indirect interband transition energies (from the sizequantized valence band states at Γ to the conduction band states at L) between 0.8 to 0.4 eV, and direct interband transitions between 2.5 to 2.0 eV, which agrees very well with experimental results. Similar good agreement with experiment was also found for the recently grown SnGe dots on Si substrate, covered by SiO 2 . However, neither of these are predicted to be direct band gap materials, in contrast to some earlier expectations.

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Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions

Cited by 87 publications

References 19 publications

Growth and applications of GeSn-related group-IV semiconductor materials

Growth and applications of GeSn-related group-IV semiconductor materials

Electronic structure and optical properties of Sn and SnGe quantum dots

Electronic structure and optical transitions in Sn and SnGe quantum dots in a Si matrix

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