Strain Engineering of the Magnetocaloric Effect in MnAs Epilayers

Mosca, D. H.; Vidal, Franck; Etgens, V. H.

doi:10.1103/physrevlett.101.125503

Cited by 62 publications

(47 citation statements)

References 26 publications

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“…24,25 Such artificial multiferroic devices, composed of a piezoelectric and a Gd 5 (Si,Ge) 4 magnetostrictive material, have already presented promising properties for energy harvesting purposes at the micrometric scale. Despite their properties, Gd 5 (Si x Ge 1Àx ) 4 materials were left behind in the nanoscalling race, whereas an increasing number of works have been published on Gd multilayers, 27,28 manganites, [29][30][31] FeRh, 32,33 NiMnGa, 34 and MnAs 35,36 materials and also on the MEMS development and numerical simulations. 22,[37][38][39][40] Concerning the Gd 5 (Si x Ge 1Àx ) 4 materials, there is only one not-successful report of a Gd 5 (Si x Ge 1Àx ) 4 thin film.…”

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confidence: 99%

Gd5(Si,Ge)4 thin film displaying large magnetocaloric and strain effects due to magnetostructural transition

Hadimani

Silva

Pereira

et al. 2015

Applied Physics Letters

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Magnetic refrigeration based on the magnetocaloric effect is one of the best alternatives to compete with vapor-compression technology. Despite being already in its technology transfer stage, there is still room for optimization, namely, on the magnetic responses of the magnetocaloric material. In parallel, the demand for different magnetostrictive materials has been greatly enhanced due to the wide and innovative range of technologies that emerged in the last years (from structural evaluation to straintronics fields). In particular, the Gd5(SixGe1−x)4 compounds are a family of well-known alloys that present both giant magnetocaloric and colossal magnetostriction effects. Despite their remarkable properties, very few reports have been dedicated to the nanostructuring of these materials: here, we report a ∼800 nm Gd5Si2.7Ge1.3 thin film. The magnetic and structural investigation revealed that the film undergoes a first order magnetostructural transition and as a consequence exhibits large magnetocaloric effect (−ΔSmMAX ∼ 8.83 J kg−1 K−1, ΔH = 5T) and giant thermal expansion (12000 p.p.m). The thin film presents a broader magnetic response in comparison with the bulk compound, which results in a beneficial magnetic hysteresis reduction. The ΔSmMAX exhibited by the Gd5(Si,Ge)4 thin film makes it a promising candidate for micro/nano magnetic refrigeration area.

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confidence: 99%

Gd5(Si,Ge)4 thin film displaying large magnetocaloric and strain effects due to magnetostructural transition

Hadimani

Silva

Pereira

et al. 2015

Applied Physics Letters

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“…Hence, there is a direct analogy with the dependence of the critical temperature on strain [19] and on the lattice volume as in the Bean-Rodbell model [25].…”

Section: Mce In Magneto-auxetics and Discussionmentioning

confidence: 95%

“…It should be noted that the concept of MCE occurring at zero external magnetic field has already been introduced [3], as has the concept of mechanical deformations affecting the MCE [16,19]. In particular, Tishin and Spichin introduced the concept of an elastocaloric effect which arises by changing the external pressure at a constant (or zero) magnetic field [3].…”

Section: Introductionmentioning

confidence: 99%

“…In particular, Tishin and Spichin introduced the concept of an elastocaloric effect which arises by changing the external pressure at a constant (or zero) magnetic field [3]. A study by Mosca et al showed that strain can tune MCE related to the magneto-structural phase transition in MnAs [19]. It was found that the critical temperature of the strained epilayers of MnAs depends on the mean strain ε as T T ( 1 2 ) c 0 κε = + for some adjustable parameters T 0 and κ.…”

Section: Introductionmentioning

confidence: 99%

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Colossal magnetocaloric effect in magneto-auxetic systems

Dudek

Wojciechowski

Grima

et al. 2015

Smart Mater. Struct.

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We show that a mechanically driven magnetocaloric effect (MCE) in magneto-auxetic systems (MASs) in the vicinity of room temperature is possible and the effect can be colossal. Even at zero external magnetic field, the magnetic entropy change in this reversible process can be a few times larger in magnitude than in the case of the giant MCE discovered by Pecharsky and Gschneidner in Gd 5 (Si 2 Ge 2 ). MAS represent a novel class of metamaterials having magnetic insertions embedded within a non-magnetic matrix which exhibits a negative Poisson's ratio. The auxetic behaviour of the non-magnetic matrix may either enhance the magnetic ordering process or it may result in a transition to the disordered phase. In the MAS under consideration, a spin 1/2 system is chosen for the magnetic component and the well-known Onsager solution for the two-dimensional square lattice Ising model at zero external magnetic field is used to show that the isothermal change in magnetic entropy accompanying the auxetic behaviour can take a large value at room temperature. The practical importance of our findings is that MCE materials used in present engineering applications may be further enhanced by changing their geometry such that they exhibit auxetic behaviour.

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“…Examples of transition metal monopnictide epitaxial growth on GaAs substrates include MnAs [4][5][6], CrAs [7], MnSb [8][9][10] and NiSb [11]. Compared to GaAs, rather fewer MBE growth studies have been carried out on 1 As or related substrates.…”

Section: Introductionmentioning

confidence: 99%