2004
DOI: 10.1016/j.cplett.2004.03.082
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Strain energy and thermal stability of single-walled aluminum nitride nanotubes from first-principles calculations

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Cited by 64 publications
(19 citation statements)
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“…Our previous band structure calculations on defect-free AlN nanotubes [8] gave band gaps of 7.1 and 7.0 eV for the armchair-and zigzag-type 1 nm-thick AlN NTs, respectively, which are confirmed by current calculations on defective NTs ( figure 9). However, the corresponding nanotube values obtained using plane-wave DFT calculations were found to be in the interval 3.0-4.0 eV [5,9,40], i.e. again underestimated, analogously to those discussed for AlN bulk.…”
Section: F Centres On Sw Aln Nanotubessupporting
confidence: 61%
“…Our previous band structure calculations on defect-free AlN nanotubes [8] gave band gaps of 7.1 and 7.0 eV for the armchair-and zigzag-type 1 nm-thick AlN NTs, respectively, which are confirmed by current calculations on defective NTs ( figure 9). However, the corresponding nanotube values obtained using plane-wave DFT calculations were found to be in the interval 3.0-4.0 eV [5,9,40], i.e. again underestimated, analogously to those discussed for AlN bulk.…”
Section: F Centres On Sw Aln Nanotubessupporting
confidence: 61%
“…The C–H vibration and the CH 2 vibration attributed to the peaks at 1319.7, 1386.8, and 1466.5 cm ‐1 , respectively . Meanwhile, the bands among 1300–950 cm ‐1 (1229.6, 1154.9, 1080.0, and 1031.6 cm ‐1 ) underpinned the presence of C–O bonds . These results proved successful fabrication of β‐cyclodextrin–multiwalled carbon nanotubes composites.…”
Section: Resultsmentioning
confidence: 71%
“…Other properties of BNNTs were reported by numerous researchers [17][18][19][20][21]. Owing to the great success of BNNTs, the structural stability and electronic properties of aluminum nitride nanotubes (AlNNTs) with the conventional carbon nanotube morphologies were also investigated [22][23][24]. Theoretical calculations on single-walled AlNNTs have indicated that these tubular structures are stable and have unique electronic properties [25,26].…”
Section: Introductionmentioning
confidence: 96%
“…More interestingly, zigzag BNNT and AlNNT are semiconductors with a direct band gap. The existence of a direct band gap in zigzag BNNT and AlNNT is rather important, because it suggests that such nanostructures may exhibit strong electroluminescence, which has never been observed for their bulk materials [24,35]. All nanotubes employed in this study are of the singlewalled zigzag type (displayed as BNZNT and AlNZNT), which are denoted by the chiral vector (m,0).…”
Section: Introductionmentioning
confidence: 99%