Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

Yerino, Christopher D.; Simmonds, Paul J.; Liang, Baolai; Jung, Daehwan; Schneider, Christian; Unsleber, Sebastian; Vo, Minh; Huffaker, Diana L.; Höfling, Sven; Kamp, M.; Lee, Minjoo Larry

doi:10.1063/1.4904944

Cited by 35 publications

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“…We find a median splitting of the exciton states of ∆E FSS,median = 28.5 µeV. This is slightly larger than for GaAs(111) QDs grown on InP(111)-substrate (median FSS 7.6 µeV, see [26]) and In(Ga)As-QDs on GaAs(111) substrate (median FSS 5.6 µeV, see [42]), but comparable to standard In(Ga)As-QDs grown on GaAs(001) substrates (typically a few 10 µeV up over 100 µeV) [35,[42][43][44][45]. We thus conclude, that the carrier confinement symmetry is C 2θ or lower and the AlInAs nanoclusters do not preserve the threefold symmetry which is predicted for (111)-grown QDs [39] In terms of the potential for applications in quantum information technology, it is essential that the AlInAs-clusters act as emitters of single photons.…”

Section: Resultsmentioning

confidence: 91%

“…We thus conclude, that the formation of this nanoclusters is driven by strain in the AlInAs layer which is only present for the (111) growth direction and the formation of indium rich nanoclusters is a mechanism to relax this strain. Furthermore, the AlInAs growth is dominated by 2D island nucleation, which results in a high density of step-edges [26]. These edges present many sites for incoming adsorbed atoms and therefore may also lead to a formation of indium and aluminium rich clusters due to the different mobility of the adsorbed atoms.…”

Section: Introductionmentioning

confidence: 99%

“…We have demonstrated that these (111)-oriented QDs emit photons in the spectral range above 950 nm, i.e. redshifted by 100 nm compared with the localization centers which we discuss in this work [26]. To increase the outcoupling efficiency of light during spectroscopic measurements, a solid immersion lens was glued on top of the sample with mounting wax.…”

Section: Introductionmentioning

confidence: 99%

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Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

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Unsleber, S.; Deppisch, M.; Krammel, C.M.; Vo, Minh; Yerino, C.D.; Simmonds, P.G.; Lee, Minjoo Larry; Koenraad, P.M.; Schneider, C.; Höfling, S. Published in: Optics Express DOI:10.1364/OE.24.023198Published: 03/10/2016 Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Unsleber, S., Deppisch, M., Krammel, C. M., Vo, M., Yerino, C. D., Simmonds, P. G., ... Höfling, S. (2016). Bulk AlInAs on InP(111) as a novel material system for pure single photon emission. Optics Express, 24(20), 23198-23206. DOI: 10.1364/OE.24.023198 General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Abstract: In this letter, we report on quantum light emission from bulk AlInAs grown on InP(111) substrates. We observe indium rich clusters in the bulk Al 0.48 In 0.52 As (AlInAs), resulting in quantum dot-like energetic traps for charge carriers, which are confirmed via cross-sectional scanning tunnelling microscopy (XSTM) measurements and 6-band k·p simulations. We observe quantum dot (QD)-like emission signals, which appear as sharp lines in our photoluminescence spectra at near infrared wavelengths around 860 nm, and with linewidths as narrow as 50 µeV. We demonstrate the capability of this new material system to act as an emitter of pure single photons as we extract g (2) -values as low as g

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Section: Resultsmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

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“…15,16 Growth of (111) QDs is a significant challenge, which has been addressed using etch-pit-assisted growth, 11,17 droplet epitaxy, [18][19][20][21] and recently tensile-strained self-assembly (described below). 10 All of these (111) QD growth methods result in very low FSS compared to (001) QDs. These techniques require a deep understanding of growth on (111) surfaces, both to grow high quality buffer layers as a template for QD growth, and to understand the complex process of self-assembly on (111) surfaces.…”

Section: Entangled Photon Sourcesmentioning

confidence: 99%

“…In particular, thin layers of GaAs (111) and GaSb (111) are predicted to have superior drive currents compared to Si. 3,4,7,8 One proposed device structure relies on the growth of a tensile strained GaAs quantum well on InP(111), 4,6 a material system that has been successfully grown for novel (111) quantum dots 9,10 (described later in this section). Fabrication of a III-V MOSFET using these strategies has yet to be demonstrated, and its realization relies on the growth of high quality III-Vs on (111) surfaces.…”

Section: Iii-v Field-effect Transistorsmentioning

confidence: 99%

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Yerino

Liang

Huffaker

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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For more than 50 years, research into III-V compound semiconductors has focused almost exclusively on materials grown on (001)-oriented substrates. In part, this is due to the relative ease with which III-Vs can be grown on (001) surfaces. However, in recent years, a number of key technologies have emerged that could be realized, or vastly improved, by the ability to also grow high-quality III-Vs on (111)-or (110)-oriented substrates These applications include: nextgeneration field-effect transistors, novel quantum dots, entangled photon emitters, spintronics, topological insulators, and transition metal dichalcogenides. The first purpose of this paper is to present a comprehensive review of the literature concerning growth by molecular beam epitaxy (MBE) of III-Vs on (111) and (110) substrates. The second is to describe our recent experimental findings on the growth, morphology, electrical, and optical properties of layers grown on non-(001) InP wafers. Taking InP(111)A, InP(111)B, and InP(110) substrates in turn, the authors systematically discuss growth of both In 0.52 Al 0.48 As and In 0.53 Ga 0.47 As on these surfaces. For each material system, the authors identify the main challenges for growth, and the key growth parameter-property relationships, trends, and interdependencies. The authors conclude with a section summarizing the MBE conditions needed to optimize the structural, optical and electrical properties of GaAs, InAlAs and InGaAs grown with (111) and (110) orientations. In most cases, the MBE growth parameters the authors recommend will enable the reader to grow high-quality material on these increasingly important non-(001) surfaces, paving the way for exciting technological advances.

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Nanomaterials Properties

Simmonds

2016

Handbook of Measurement in Science and Engineering

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Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

Abstract: Articles you may be interested inEffect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots

Cited by 35 publications

References 29 publications

Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Nanomaterials Properties

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