“…Manganese perovskites have the advantage that their transition from a paramagnetic insulator to a ferromagnetic metal can be tuned by controlling the doping rate and the species of di-and trivalent metal ions. Thin films of these materials are considered to have potential for the development of novel electronic devices [2][3][4][5]. Recently, the modulation of physical properties of perovskite manganite thin films by incorporating a perovskite oxide, which has a different physical form, into it, to produce a heterostructure is proposed.…”