Strain-balanced quantum wells for power FET applications

Harris, J. J.; Roberts, Jason; Jaszek, R.; Hopkinson, M.

doi:10.1109/edmo.1995.493687

Cited by 3 publications

(3 citation statements)

References 5 publications

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“…Recently, Thobel et al [8] used the approach described above to find the influence of the doping profile and doping density on the electron velocities in delta-doped quantum wells. However, their highest sheet density is a factor of six less than the values used here and in [4,5], ruling out quantitative comparisons. The general conclusions of Thobel et al [8] can nevertheless be examined in the light of our results.…”

Section: Introductioncontrasting

confidence: 54%

“…However, n channel is limited by the conduction band offset, making these devices less than optimal for the power applications described above. Masselink [2], Schubert and Ploog [3], Roberts et al [4] and Harris et al [5] have shown that delta-doping (where the dopants are confined to a single atomic plane) enables improvements in n channel without a large reduction in v sat . Thus a delta-doped quantum well may have advantages as the conducting channel of a power FET [6], the structure of which is sketched in figure 1.…”

Section: Introductionmentioning

confidence: 99%

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Monte Carlo simulation of electron transport in highly delta-doped GaAs/AlGaAs quantum wells

Watling

Walker

Harris

et al. 1998

Semicond. Sci. Technol.

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Experimental measurements on III-V semiconductor structures in which a delta-doped plane has been placed inside a quantum well have shown good in-plane carrier velocity characteristics at high carrier concentrations; such structures have applications in power field effect transistors. To investigate the physics underlying the transport in these layered structures, we have obtained the velocity-field characteristics for the channel electrons with an ensemble Monte Carlo simulation that takes into account the confinement of the electrons within the quantum well. Our results compare well with experiment, especially given that there are no adjustable parameters. We show that high-field channel velocities v sat are much more affected by K-space transfer between and L valleys than by real-space transfer into the barrier material. The velocity-field curves are sensitive to the position of the delta-doped plane, for example the low-field mobility is lowered as the delta-doped plane approaches the centre of the quantum well because the overlap of the lowest subband electron wavefunction with the delta-doped plane is greatest. We have also suggested an explanation for a correlation between low-field mobility and saturation velocity deduced from experimental data.

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Section: Introductioncontrasting

confidence: 54%

Section: Introductionmentioning

confidence: 99%

Monte Carlo simulation of electron transport in highly delta-doped GaAs/AlGaAs quantum wells

Watling

Walker

Harris

et al. 1998

Semicond. Sci. Technol.

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“…The power handling capacity in microwave field effect transistors (FETs) has been greatly improved by increasing the electron density in the conducting channel to values ∼1 × 10 12 cm −2 [1,2] through modulation doping, although this has resulted in a drop in mobility and saturation drift velocity v sat and hence the maximum operating frequency through increased ionized impurity scattering. References [3][4][5][6][7][8] have shown that delta-doping (where the dopants are confined to a single atomic plane) within the quantum well enables improvements in carrier density without a large reduction in v sat .…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo simulation of electron transport in delta-doped lattice-matched and strained-balanced InGaAs/InAlAs quantum wells

Watling

Walker

Harris

et al. 1999

Semicond. Sci. Technol.

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Strained-balanced In x Ga 1−x As/InAlAs quantum well structures have been shown to generate high carrier density, high-mobility layers suitable for power field effect transistor (FET) applications. Doped channel devices allow higher carrier densities than modulation-doped structures but with reduced carrier velocities due to increased ionized impurity scattering. The amount of ionized impurity scattering may be reduced by the introduction of compositional grading in In x Ga 1−x As quantum wells which results in an increasing depth of the quantum well on the opposite side to the delta-doped plane. The grading is achieved by the use of a number of steps, where each step has a fixed value of x. An ensemble Monte Carlo simulation has been used to calculate the velocity-field characteristics of the conduction electrons confined within the quantum well in such a structure. Here the envelope wavefunctions for the confined electrons are calculated using a self-consistent Poisson-Schrödinger solver. Our velocity-field characteristics show good agreement with experiment for the three-step structure but the agreement is noticeably worse for lattice-matched and five-step structures. We have shown that a correlation between the low-field mobility and saturation velocity observed experimentally for GaAs/AlGaAs and In x Ga 1−x As quantum wells and theoretically for GaAs/AlGaAs quantum wells is also valid for the predicted results in these structures. A similar explanation to that provided for the GaAs/AlGaAs quantum wells is shown to hold here.

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Observation of the multiple negative-differential-resistance of metal-insulator-semiconductor-like structure with step-compositioned In/sub x/Ga/sub 1-x/As quantum wells

Liu

Laih

et al. 1997

IEEE Electron Device Lett.

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Strain-balanced quantum wells for power FET applications

Cited by 3 publications

References 5 publications

Monte Carlo simulation of electron transport in highly delta-doped GaAs/AlGaAs quantum wells

Monte Carlo simulation of electron transport in highly delta-doped GaAs/AlGaAs quantum wells

Monte Carlo simulation of electron transport in delta-doped lattice-matched and strained-balanced InGaAs/InAlAs quantum wells

Observation of the multiple negative-differential-resistance of metal-insulator-semiconductor-like structure with step-compositioned In/sub x/Ga/sub 1-x/As quantum wells

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