Monte Carlo simulation of electron transport in highly delta-doped GaAs/AlGaAs quantum wells

Watling, J.R.; Walker, Alison B.; Harris, J. J.; Roberts, Jason

doi:10.1088/0268-1242/13/1/007

Cited by 9 publications

(28 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Electron transports in MgZnO/ZnO heterostructures are assumed to be influenced by acoustic phonon (AC), polar optical phonon (POP), interface roughness (IFR), dislocation (DIS), and random alloy (RAS) scatterings. The corresponding probabilities for intersubband and intrasubband scatterings have been discussed in detail in [27,28]. Electron escape (ESC)…”

Section: Electron Scattering and Ensemble Monte Carlo Methodsmentioning

confidence: 99%

Velocity-field characteristics of MgxZn1−xO/ZnO heterostructures

Liu

2023

J Comput Electron

View full text Add to dashboard Cite

In this work, the electron transport in MgxZn1-xO/ZnO heterostructures at room temperature is simulated by the ensemble Monte Carlo (EMC) method. Electron scatterings including deformed acoustic phonon (DAC), piezoelectric acoustic phonon (PAP), polar optical phonon (POP), interface roughness (IFR), dislocation (DIS), electron escape (ESC) and capture (CPR) by optical phonon, and random alloy (RAS), are considered in EMC.Electron drift velocities in MgxZn1-xO/ZnO heterostructures with various Mg composition x (0.1~0.3) are calculated at electric fields up to 25kV/cm. We find that there is no obvious velocity saturation occuring in the range of the electric field considered. The results show that ESC scattering is one of the main physical mechanisms that limit the drift velocity. On the other hand, it is found that the competition between IFR and intersubband POP scatterings plays an important role in the change of electron drift velocity with the increasing Mg compositions.

show abstract

Section: Electron Scattering and Ensemble Monte Carlo Methodsmentioning

confidence: 99%

Velocity-field characteristics of MgxZn1−xO/ZnO heterostructures

Liu

2023

J Comput Electron

View full text Add to dashboard Cite

show abstract

“…These masses are then employed within a self-consistent solution of the coupled Poisson and Schrö-dinger equations as described in Ref. 27, employing an extrapolated convergence factor method as described in Ref. 33 to calculate the wavefunction envelopes of the carriers within the Si 0.3 Ge 0.7 /Ge quantum well superlattice.…”

Section: Modelling Of the Electrical Conductivitymentioning

confidence: 99%

A study of the impact of dislocations on the thermoelectric properties of quantum wells in the Si/SiGe materials system

Watling

Paul

2011

Journal of Applied Physics

View full text Add to dashboard Cite

Thermoelectric materials generate electricity from thermal energy using the Seebeck effect to generate a voltage and an electronic current from a temperature difference across the semiconductor. High thermoelectric efficiency ZT requires a semiconductor with high electronic conductivity and low thermal conductivity. Here, we investigate the effect of scattering from threading dislocations of edge character on the thermoelectric performance of individual n and p-channel SiGe multiple quantum well structures. Our detailed physical simulations indicate that while the thermal and electrical conductivities decrease with increasing dislocation scattering/density, the Seebeck coefficient actually increases with increasing threading dislocation density above 10 6 cm À2 at room temperature, due to an increase in the entropy associated with each carrier. The collective result of these individual effects, is that the present Si-based quantum well designs can tolerate scattering by a threading dislocation density up to $10 8 cm À2, well within the capabilities of modern growth techniques, before significant reductions in ZT due to scattering from threading dislocations is observed.

show abstract

“…In our previous studies [13], we have carefully treated the calculations of the scattering rates mentioned above, except the II scattering. The intersubband and intrasubband II scattering rates are calculated by equations in [14].…”

Section: Simulated Structures and Emc Modelmentioning

confidence: 99%

Doping dependence of electron populations in optically pumped step quantum well structures

Liu

Lin

2010

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Transient electron dynamics in quantum well (QW) structure is very important for designing terahertz (THz) lasers based on subband transitions. In this paper, four three-level (indexed by 0, 1 and 2) asymmetric stepped GaAs/Al x Ga 1−x As QW structures with different doping conditions are designed, and an ensemble Monte Carlo method is adopted to comparatively analyze the corresponding electron dynamics. We find that transient population reversion between upper two subbands is strongly dependent on a low doping density and doping position far away from electron ensemble to reduce electron-electron (EE) scattering and impurity scattering. The results also show that three types of EE scattering, E 21 E 00 , E 22 E 01 and E 21 E 22 , subscripts representing the initial and final levels of an electron, dominate the EE scattering contribution to the transient population reversion. The ground state is found to have the highest average energy among the three levels, which may seriously weaken the optical pumping efficiency.

show abstract

Monte Carlo simulation of electron transport in highly delta-doped GaAs/AlGaAs quantum wells

Cited by 9 publications

References 37 publications

Velocity-field characteristics of MgxZn1−xO/ZnO heterostructures

Velocity-field characteristics of MgxZn1−xO/ZnO heterostructures

A study of the impact of dislocations on the thermoelectric properties of quantum wells in the Si/SiGe materials system

Doping dependence of electron populations in optically pumped step quantum well structures

Contact Info

Product

Resources

About