Strain-balanced   heterostructures with up to 50 QWs by MBE

Hillmer, Hartmut; Lösch, R.; Schlapp, W.

doi:10.1016/s0022-0248(96)00825-1

Cited by 8 publications

(5 citation statements)

References 18 publications

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“…However, if we exclude the broadening of s due to the misreading of wavelengths related to the cracks, the estimated s should be less than 1.8 nm. When this is considered, the reported uniformity of the MQWs is comparable to the s of the state-of-the-art analog-alloy InGaAs/InGaAlAs MQWs grown by MBE [22] (sE0.8 nm). Furthermore, in this report, the diameter of uniform wavelength region is approximately 2 cm, whereas that of the analog-alloy InGaAs/ InGaAlAs MQWs is approximately 1 cm.…”

Section: The Uniformity Of 2-in Diameter Digital-alloy Mqwssupporting

confidence: 57%

See 1 more Smart Citation

MBE growth and optical properties of digital-alloy 1.55μm multi-quantum wells

Song¹,

Choi²,

Kim³

et al. 2004

Journal of Crystal Growth

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Section: The Uniformity Of 2-in Diameter Digital-alloy Mqwssupporting

confidence: 57%

“…Therefore, the sensitivity of the wave functions to interface roughness would decrease. As a result, the PL linewidth partially induced by the interface roughness would be slightly reduced [22].…”

Section: Optical Properties Of Digital-alloy Ingaas/ Ingaalas Mqwsmentioning

confidence: 99%

MBE growth and optical properties of digital-alloy 1.55μm multi-quantum wells

Song¹,

Choi²,

Kim³

et al. 2004

Journal of Crystal Growth

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“…For the studied SL sample these values are ∼5.0 meV (at 0.1 mW, from the Gaussian deconvolution) and 36.1 meV (at 10 mW) for the linewidths at 9 and 300 K, respectively. These results reveal the excellent sample quality because, besides being below the values obtained for the sample considered as state of the art and other values presented in [13], they refer to an intentionally doped SL sample, which contributes to the linewidth broadening of the PL spectra.…”

Section: Excitonic Emission In the Temperature Range 9-300 Kmentioning

confidence: 57%

“…In quantum well (QW) structures, the linewidth of the excitonic line is frequently taken as a measure of the sample quality [12]. The tunnelling process, which is characteristic of superlattices, increases the three-dimensional character of these structures, and the sensitivity of the wavefunctions to the interface roughness decreases [13]; as a result, the PL linewidth partially induced by the interface roughness would be slightly reduced [13].…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence properties of a Si doped InGaAs/InGaAlAs superlattice

Lopes¹,

Duarte²,

Dias³

et al. 2007

J. Phys.: Condens. Matter

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In this paper, the optical properties of a Si doped In 0.53 Ga 0.47 As/In 0.52 Ga 0.24 Al 0.24 As superlattice (SL) are investigated by using the photoluminescence (PL) technique in the temperature range of 9-300 K. The origins of the optical transitions observed in the spectra are attributed through the analysis of the transition behaviour with temperature and excitation power. The linewidths obtained at 9 and 300 K are smaller than those previously reported in the literature, and the blueshift observed with increasing temperature has a small magnitude, indicating the excellent quality of the sample. The experimental results are compared with theoretical calculations based on the envelope function formalism, with an excellent accordance. The excitonic emission was obtained in the range of 9-300 K, and the applicability of the Varshni, Viña, and Pässler (p-type and ρ-type) models, usually used to describe the variation of the excitonic energy transition as a function of temperature in semiconductor materials, was also analysed.

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“…[1][2][3] In a very simplified picture, the arrangement of the quantum wells define a resonator for electron waves.…”

Section: To the Editormentioning

confidence: 99%

Letters to the Editor

Hillmer

2003

MRS Bull.

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of MRS Bulletin on Photonic Materials for Optical Communications, a wrong scale was included in the right-hand-side electron micrograph at the bottom. This destroyed the methodology behind the bordering scanning electron micrographs (SEMs) selected to point out a very interesting parallel between quantum electronics and quantum photonics. Figure 1 shows the set of images with the correct scale for each.To tailor electronic energy levels for electrons and holes, semiconductor heterostructures of distinct layer thicknesses are designed, epitaxially grown, and applied in modern optoelectronic devices. If the layer thickness of the lower bandgap material is on the order of the electron wavelength, quantization occurs, leading to distinct quantized energy levels in the socalled quantum wells. These energy levels and the corresponding electronic wavefunctions (modes) are described by the Schrödinger equation. The materials, strain, and-dominantly important-the layer thicknesses in the 10 AlGaInAs multiple quantum wells (bottom left image in Figure 1) are tailored to generate light of about 1.55 µm wavelength (gain profile).These wells act as the laser active medium in the high-speed laser shown (top left image in Figure 1). 1-3 In a very simplified picture, the arrangement of the quantum wells define a resonator for electron waves.The micrographs on the right-hand side in Figure 1 show the exact analogy for photons. In order to select a distinct mode in the resonator of a vertical-cavity surface emitting laser (VCSEL), layers having thicknesses on the order of the photon wavelength are chosen. In this case also, a kind of quantization takes place. The effective indices and the corresponding photon wavefunctions (modes) are described by the Helmholtz equation (from a mathematical point of view, the Schrödinger and Helmholtz equations are very similar). The example shows ultrahigh refractiveindex contrast in InP/air-gap multiple membrane structures to define distributed Bragg reflectors of very high reflectance (here, for light in the wavelength range of 1.55 µm). [4][5][6] In a very simplified picture, the arrangement of the periodic refractive index variations define a resonator for photon waves.

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Strain-balanced heterostructures with up to 50 QWs by MBE

Cited by 8 publications

References 18 publications

MBE growth and optical properties of digital-alloy 1.55μm multi-quantum wells

MBE growth and optical properties of digital-alloy 1.55μm multi-quantum wells

Photoluminescence properties of a Si doped InGaAs/InGaAlAs superlattice

Letters to the Editor

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