MBE growth and optical properties of digital-alloy 1.55μm multi-quantum wells

Song, Jin Dong; Choi, Won Jun; Kim, Jong Min; Chang, Ki Soo; Lee, Yong Tak

doi:10.1016/j.jcrysgro.2004.06.037

Cited by 5 publications

(2 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One can also come to this conclusion by comparing the obtained linewidths with the values for samples considered as state of the art in the literature. For a digital-alloy InGaAs/InGaAlAs multi-quantum well, Song et al [25] obtained the values of 5.7 and 43 meV for the linewidths (FWHM) at 9 and 300 K, respectively. For the studied SL sample these values are ∼5.0 meV (at 0.1 mW, from the Gaussian deconvolution) and 36.1 meV (at 10 mW) for the linewidths at 9 and 300 K, respectively.…”

Section: Excitonic Emission In the Temperature Range 9-300 Kmentioning

confidence: 99%

“…As for the In 1−x−y Ga y Al x As quaternary alloys, few studies of their energy gap and linewidth variation with temperature have been published. Song et al [25] have recently discussed the linewidth dependence on temperature in a digital-alloy InGaAs/InGaAlAs multiquantum well sample, and they observed a relatively narrow (5.7 meV) linewidth at low temperature; however, to our knowledge, there is no systematic analysis of the theoretical models used to describe the energy gap variation with the temperature or the linewidth dependence on temperature for superlattices with InGaAlAs alloy barriers.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Photoluminescence properties of a Si doped InGaAs/InGaAlAs superlattice

Lopes¹,

Duarte²,

Dias³

et al. 2007

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

In this paper, the optical properties of a Si doped In 0.53 Ga 0.47 As/In 0.52 Ga 0.24 Al 0.24 As superlattice (SL) are investigated by using the photoluminescence (PL) technique in the temperature range of 9-300 K. The origins of the optical transitions observed in the spectra are attributed through the analysis of the transition behaviour with temperature and excitation power. The linewidths obtained at 9 and 300 K are smaller than those previously reported in the literature, and the blueshift observed with increasing temperature has a small magnitude, indicating the excellent quality of the sample. The experimental results are compared with theoretical calculations based on the envelope function formalism, with an excellent accordance. The excitonic emission was obtained in the range of 9-300 K, and the applicability of the Varshni, Viña, and Pässler (p-type and ρ-type) models, usually used to describe the variation of the excitonic energy transition as a function of temperature in semiconductor materials, was also analysed.

show abstract

Section: Excitonic Emission In the Temperature Range 9-300 Kmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photoluminescence properties of a Si doped InGaAs/InGaAlAs superlattice

Lopes¹,

Duarte²,

Dias³

et al. 2007

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to surface emitting laser diodes

Cho¹,

Kim²,

Song³

et al. 2010

Solid State Communications

View full text Add to dashboard Cite

Optical characterization of digital alloy In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P multi-quantum-wells grown by molecular beam epitaxy

Kim

Park

Lee

et al. 2006

Journal of Applied Physics

View full text Add to dashboard Cite

An In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P multi-quantum-well (MQW) structure grown by molecular beam epitaxy using a digital alloy method was parametrically investigated by photoluminescence (PL) measurement performed in a temperature range of 10–290K. The PL peak energies did not change with increasing temperature up to 60K, while the PL peak energy monotonously decreased with increasing temperature beyond 60K. From the curve fit of the linewidth full width at half maximum of the PL peak, it was observed that the homogeneous broadening of In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P MQW with digital alloy barriers due to scattering by longitudinal optical phonons was smaller than that of InGaAs∕InGaAlAs MQW with digital alloy barriers. This is in accordance with the existence of a relatively weak phonon-related PL peak in the PL spectrum of InGaAlP digital alloy, as compared with InGaAlAs digital alloy. The fit of the integrated PL intensity shows the occurrence of a nonradiative recombination process with an activation energy E1=24.4meV up to 60K. On the other hand, the process of nonradiative recombination with an activation energy E2=109meV occurred above 60K, which is in good agreement with one-half of the calculated total confinement energy ΔE of the electron-hole pair in the quantum well (∼108meV). The In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P MQW structure with digital alloy barriers has larger activation energy (E2=109meV) than In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P MQW (E2=90meV) with analog alloy barriers. Therefore, the thermal emission of carriers into the barrier can be reduced at temperatures above 60K due to the high effective barrier height.

show abstract

MBE growth and optical properties of digital-alloy 1.55μm multi-quantum wells

Cited by 5 publications

References 21 publications

Photoluminescence properties of a Si doped InGaAs/InGaAlAs superlattice

Photoluminescence properties of a Si doped InGaAs/InGaAlAs superlattice

A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to surface emitting laser diodes

Optical characterization of digital alloy In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P multi-quantum-wells grown by molecular beam epitaxy

Contact Info

Product

Resources

About