Strain-balanced GaAsP/InGaAs quantum well solar cells

Ekins-Daukes, N. J.; Barnham, K.W.J.; Connolly, J.P.; Roberts, J.S.; Clark, Joseph; Hill, G.; Mazzer, M.

doi:10.1063/1.125580

Cited by 260 publications

(134 citation statements)

References 6 publications

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“…These heterostructure designs have led to its use in long wavelength device applications such as In x Ga 1-x As/GaAs 1-y P y /Al z Ga 1-z As quantum-cascade light-emitting structures, 5 In x Ga 1-x As/GaAs 1-y P y /GaAs quantum-well diode lasers 6 and GaAs 1-y P y /In x Ga 1-x As strain-balanced quantum well solar cells. 7 GaAs 1-y P y is also not susceptible to kinetically driven composition modulations that have been observed in some other widely used semiconductor alloy systems, such as In x Ga 1-x As. 8 Metal-organic vapor phase epitaxy (MOVPE) is a proven technology for the fabrication of multilayer thin film optoelectronic devices.…”

mentioning

confidence: 93%

Enhanced Incorporation of P into Tensile-Strained GaAs_1-yP_yLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures

Guan

Forghani

Schulte

et al. 2016

ECS J. Solid State Sci. Technol.

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Metal-organic vapor phase epitaxy (MOVPE) of tensile-strained GaAs 1-y P y layers on GaAs substrates was carried out over the temperature range from 380 to 650 • C. The P content in the GaAs 1-y P y epitaxial layers initially decreases with decreasing growth temperature from 550 to 650 • C, while then exhibiting an increase with decreasing growth temperature from 550 to 380 • C. Thermodynamic calculations indicate that P incorporation is far from thermodynamic equilibrium at all growth temperatures. Related surface kinetics for the anion incorporation competition are discussed and it is suggested that the P incorporation is assisted by the increased P surface coverage at low growth temperatures. GaAs 1-y P y tensile strained layers with layer thickness exceeding the critical thickness exhibit an early stage of strain relaxation by the formation of cracks rather than misfit dislocations. GaAs 1-y P y ternary alloys have been used extensively in a variety of III-V semiconductor electronic and optoelectronic devices. With a direct bandgap ranging from 1.42 to 1.98 eV when 0 < y < 0.45, GaAs 1-y P y has been used as the active region of quantum well diode lasers emitting at 715-850 nm.1-4 The biaxial tensile strain created when GaAs 1-y P y is grown pseudomorphically on a GaAs substrate modifies the band structure and leads to improved laser diode performance and controlled polarization through the control of the magnitude of strain.1,2 Furthermore, when incorporated into structures utilizing In x Ga 1-x As, tensile-strained GaAs 1-y P y can compensate the compressive strain in the In x Ga 1-x As and provide carrier confinement through the band offsets. These heterostructure designs have led to its use in long wavelength device applications such as In x Ga 1-x As/GaAs 1-y P y /Al z Ga 1-z As quantum-cascade light-emitting structures,5 In x Ga 1-x As/GaAs 1-y P y /GaAs quantum-well diode lasers 6 and GaAs 1-y P y /In x Ga 1-x As strain-balanced quantum well solar cells.7GaAs 1-y P y is also not susceptible to kinetically driven composition modulations that have been observed in some other widely used semiconductor alloy systems, such as In x Ga 1-x As. Metal-organic vapor phase epitaxy (MOVPE) is a proven technology for the fabrication of multilayer thin film optoelectronic devices. Generally, MOVPE-based III-V compound semiconductor growth requires an excess of the group V component in the gas-phase, i.e. a gas phase V/III ratio greater than unity. The growth rate is determined by the group III, in this case, Ga, molar flow rate sent into the reactor. The excess anion concentration in the gas phase challenges the control over the solid composition for mixed anion alloys, because the incorporation behavior may not only be controlled by thermodynamic influences, but also by competing surface reactions for anion incorporation. 9As the only Ga-mixed anion alloy system which forms a complete solid solution across its phase diagram, 10 GaAs 1-y P y serves as a model system to investigate any CVD-based influences on the an...

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confidence: 93%

Enhanced Incorporation of P into Tensile-Strained GaAs_1-yP_yLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures

Guan

Forghani

Schulte

et al. 2016

ECS J. Solid State Sci. Technol.

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“…Fig. 6(b) shows the case for the strain-balanced structures where the average lattice constant of the structure is designed to be equal to that of the substrate in order to overcome limitations in growing multiple QW layers [54]. This situation balances accumulated stress within the structure.…”

Section: Accumulated Stress Considerationsmentioning

confidence: 99%

Epitaxial Designs for Maximizing Efficiency in Resonant Tunneling Diode Based Terahertz Emitters

Baba

Stevens

Mukai

et al. 2018

IEEE J. Quantum Electron.

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“…From the experimental data, it is possible to calculate a projected photovoltaic performance under the AM1.5 G spectrum to correct for the high shading loss in the devices. 14 The method assumes the dark current of the diodes is representative of larger area solar cells and calculates the expected short-circuit current density of cells using the measured EQE, and the reference standard ASTM G173-03 AM1.5 G spectrum where a 5% shading loss for large area cells is assumed. The projected photovoltaic performance is presented in Table I.…”

Section: à3mentioning

confidence: 99%

InAlAs solar cell on a GaAs substrate employing a graded InxGa1−xAs–InP metamorphic buffer layer

Mathews

O’Mahony

Gocalinska

et al. 2013

Applied Physics Letters

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Single junction In0.52Al0.48As solar cells have been grown on a (100) GaAs substrate by employing a 1 μm thick compositionally graded InxGa1−xAs/InP metamorphic buffer layer to accommodate the 3.9% mismatch. Cells processed from the 0.8 μm thick InAlAs layers had photovoltaic conversion efficiency of 5% with an open circuit voltage of 0.72 V, short-circuit current density of 9.3 mA/cm2, and a fill factor of 74.5% under standard air mass 1.5 illumination. The threading dislocation density was estimated to be 3 × 108 cm−2.

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Strain-balanced GaAsP/InGaAs quantum well solar cells

Cited by 260 publications

References 6 publications

Enhanced Incorporation of P into Tensile-Strained GaAs_1-yP_yLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures

Enhanced Incorporation of P into Tensile-Strained GaAs_1-yP_yLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures

Epitaxial Designs for Maximizing Efficiency in Resonant Tunneling Diode Based Terahertz Emitters

InAlAs solar cell on a GaAs substrate employing a graded InxGa1−xAs–InP metamorphic buffer layer

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Strain-balanced GaAsP/InGaAs quantum well solar cells

Cited by 260 publications

References 6 publications

Enhanced Incorporation of P into Tensile-Strained GaAs1-yPyLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures

Enhanced Incorporation of P into Tensile-Strained GaAs1-yPyLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures

Epitaxial Designs for Maximizing Efficiency in Resonant Tunneling Diode Based Terahertz Emitters

InAlAs solar cell on a GaAs substrate employing a graded InxGa1−xAs–InP metamorphic buffer layer

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Enhanced Incorporation of P into Tensile-Strained GaAs_1-yP_yLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures

Enhanced Incorporation of P into Tensile-Strained GaAs_1-yP_yLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures