Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs

Chang, Tzu Hsuan; Xiong, Kanglin; Park, Sung Hyun; Gao, Yuan; Ma, Zhenqiang; Han, Jung

doi:10.1038/s41598-017-06957-8

Cited by 24 publications

(22 citation statements)

References 46 publications

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“…The primary reason is that now each chip is exposed to the etchant environment simultaneously, and thus the etching speed is accelerated significantly. A wide range of chip-scale devices, such as LEDs [ 1 , 7 , 8 , 19 , 29 , 57 , 63 ], HEMTs [ 10 , 45 ], and detectors [ 60 ], have been demonstrated by the ‘chip-first”-based ELO approach.…”

Section: Chip-scale Transfer Techniquesmentioning

confidence: 99%

“…While, in many cases, the growth substrate is preserved after the chip fabrication, there are many occasions where the semiconductor layers need to be very thin (from nm to µm scale) and transferred to a different substrate by removing the growth substrate [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , …”

Section: Introductionmentioning

confidence: 99%

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Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review

Gong

2021

Nanomaterials

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Hetero-integration of functional semiconductor layers and devices has received strong research interest from both academia and industry. While conventional techniques such as pick-and-place and wafer bonding can partially address this challenge, a variety of new layer transfer and chip-scale transfer technologies have been developed. In this review, we summarize such transfer techniques for heterogeneous integration of ultrathin semiconductor layers or chips to a receiving substrate for many applications, such as microdisplays and flexible electronics. We showed that a wide range of materials, devices, and systems with expanded functionalities and improved performance can be demonstrated by using these technologies. Finally, we give a detailed analysis of the advantages and disadvantages of these techniques, and discuss the future research directions of layer transfer and chip transfer techniques.

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Section: Chip-scale Transfer Techniquesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review

Gong

2021

Nanomaterials

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“…Some transfer techniques have been reported and are shown in Table 1, such as the laser lift-off technique [14,15], chemical lift-off (CLO) [16], mechanical lapping and etching of silicon-based HEMTs [17], and introducing an atomic-thickness release layer [18,19], which increases the cost and risk due to the involvement of bulky and expensive equipment and/or strong acid. In addition, conductivity-selective electrochemical (EC) etching by preparing pre-holes on the epitaxial wafer layer [20,21], inevitably destroys the effective area and integrity of NMs and largely limits the subsequent applications. Thus, it is necessary to develop a cost-effective and high-efficiency method for fabricating large bendable HEMTs.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect

Chen

Dong

et al. 2021

Nano-Micro Lett.

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High-electron-mobility transistors (HEMTs) are a promising device in the field of radio frequency and wireless communication. However, to unlock the full potential of HEMTs, the fabrication of large-size flexible HEMTs is required. Herein, a large-sized (> 2 cm2) of AlGaN/AlN/GaN heterostructure-based HEMTs were successfully stripped from sapphire substrate to a flexible polyethylene terephthalate substrate by an electrochemical lift-off technique. The piezotronic effect was then induced to optimize the electron transport performance by modulating/tuning the physical properties of two-dimensional electron gas (2DEG) and phonons. The saturation current of the flexible HEMT is enhanced by 3.15% under the 0.547% tensile condition, and the thermal degradation of the HEMT was also obviously suppressed under compressive straining. The corresponding electrical performance changes and energy diagrams systematically illustrate the intrinsic mechanism. This work not only provides in-depth understanding of the piezotronic effect in tuning 2DEG and phonon properties in GaN HEMTs, but also demonstrates a low-cost method to optimize its electronic and thermal properties.

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“…However, exfoliating III‐nitride films from such single‐crystalline substrates proves difficult because of the strong sp 3 ‐type covalent bonds between the substrates and epilayers . To overcome this problem, thermal release through laser radiation, stamp‐based printing, chemical etching, and mechanical exfoliation from single‐crystalline substrates have been investigated. However, there still remain some bottlenecks for future applications, such as damage, limited size, and tedious steps of the flexible production process .…”

Section: Introductionmentioning

confidence: 99%

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

Wang

Hao

et al. 2019

Advanced Materials

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to 6.2 eV for AlN, [3] which spans the entire ultraviolet and visible band [4][5][6][7] as well as the near-infrared region. [8,9] Accordingly, III-nitrides have been widely adopted for the fabrication of light-emitting diodes (LEDs), [10][11][12] laser diodes (LDs), [13][14][15] photodetectors (PDs), [16][17][18] and solar cells. [19][20][21] Furthermore, the spontaneous and piezoelectric polarization in wurtzite semiconductors [22][23][24][25] and the high electron drift velocities [26][27][28] can be used to fabricate high electron mobility transistors based on two-dimensional (2D) electron gas (2DEG) in AlGaN/GaN heterostructures. [29][30][31][32] At present, by employing metal organic chemical vapor deposition (MOCVD), [3,[33][34][35] molecular beam epitaxy (MBE), [36][37][38][39] or hydride vapor phase epitaxy (HVPE), [40][41][42] III-nitride films with high crystalline quality can be obtained on c-plane sapphire, [43][44][45] Si (111), [38,[46][47][48] or 6H-SiC [49][50][51] substrates at a high growth temperature, usually above 1000 °C. [52][53][54] However, exfoliating III-nitride films from such single-crystalline substrates proves difficult because of the strong sp 3 -type covalent bonds between the substrates and epilayers. [55] To overcome this problem, thermal release through laser radiation, [56,57] stamp-based printing, [58,59] chemical etching, [60][61][62][63][64][65][66][67] and mechanical exfoliation [54,55,68,69] from singlecrystalline substrates have been investigated. However, there still remain some bottlenecks for future applications, such as damage, limited size, and tedious steps of the flexible production process. [55] Furthermore, flexible amorphous substrates generally cannot tolerate such high growth temperature, [54] and cannot be used for epitaxial growth of single-crystalline films because of the unordered surface atomic arrangement. [70,71] Hence, it is extremely difficult to make allowance for wearable and foldable applications of next-generation (opto)electronic devices based on III-nitrides. [72] On the other hand, sp 2 -bonded 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) exhibit hexagonal in-plane lattice arrangements and weakly bonded layers. [54,73,74] If sp 3 -bonded III-nitride films can somehow be grown on sp 2 -bonded 2D materials, it is theoretically possible to transfer these functional films onto foreign flexible substrates because of the weak van der Waals interactions on both sides of the 2D materials. [68,75,76] In this case, the 2D materials not only act as a buffer layer but also provide a release layer for the mechanical exfoliation of solid-state lighting, flat-panel displays, and solar energy and power electronics. Generally, GaN-based devices are heteroepitaxially grown on c-plane sapphire, Si (111), or 6H-SiC substrates. However, it is very difficult to release the GaN-based films from such single-crystalline substrates and transfer them onto other foreign substrates. Consequently, it is difficult to meet t...

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Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs

Cited by 24 publications

References 46 publications

Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review

Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review

Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

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