Strain and electrical characterization of metal-oxide-semiconductor field-effect transistor fabricated on mechanically and thermally transferred silicon on insulator films

Abstract

Articles you may be interested inCharacterization of current injection mechanism in Schottky-barrier metal-oxide-semiconductor field-effect transistors Appl. Phys. Lett. 95, 083502 (2009); Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal-oxide-semiconductor field-effect transistors Nitrided thermal SiO 2 for use as top and bottom gate insulators in self-aligned double gate silicon-on-insulator metal-oxide-semiconductor field effect transistor Unique method to electrically characterize a single stacking fault in silicon-on-insulator metal-oxide-semiconductor field-effect transistors Silicon-on-insulator (SOI) substrates were created from two methods of ion cutting: thermal exfoliation (TE) and mechanical exfoliation (ME). These SOI films are characterized to discern the differences in electrical and other properties induced by the ME and TE processes. p-metal-oxide-semiconductor field-effect transistor were fabricated on these SOI substrates as well as on bulk silicon and their I-V characteristics measured and compared to point out materials differences created by the two methods. X-ray diffraction measurements were also performed to supplement the exploration of the TE and ME material properties. Overall the FETs fabricated from the ME SOI outperformed those made from the TE SOI and had similar I on / I off ratios and off-state drain-source leakage currents to the FETs fabricated from bulk Si.

Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique

“…It has been reported that layer-transferred Si on an oxidized Si wafer exhibits an initial compressive stress that is subsequently released after a 1000 C anneal [10]. If similar stress relaxation occurred in SOQ at the annealing temperature, then a thermallyinduced residual tensile strain of 0.2% could be deduced using the respective CTEs of and for Si and quartz.…”

“…After the exfoliation, 70-100 nm of the transferred Si was removed by chemical-mechanical polishing and 168 nm with an average surface roughness of 0.7 nm was retained. The SOQ was subsequently annealed at 600 C for 60 min and 1000 C for 60 min in nitrogen, to recover the original p-type conductivity [10] and to enhance the bonding strength.…”