Strain Analysis in Fine Al Interconnections by X-Ray Diffraction Spectrometry Using Micro X-Ray Beam

Yamamoto, Naoki; Sakata, Shinji

doi:10.1143/jjap.34.l664

Cited by 12 publications

(4 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Available studies 28,29 have used simplified material or mechanical models, as will be discussed in this article. Despite the progress made in recent years on experimental techniques, such as microscale diffraction, [30][31][32][33][34] successes in interconnect stress measurements are largely confined to specially designed test structures. For efficient design, assessment, and failure analysis of realistic devices, numerical methods are necessary.…”

Section: Introductionmentioning

confidence: 99%

Thermomechanical response and stress analysis of copper interconnects

Ege

Shen

2003

Journal of Elec Materi

View full text Add to dashboard Cite

This study is devoted to thermomechanical response and modeling of copper thin films and interconnects. The constitutive behavior of encapsulated copper film is first studied by fitting the experimentally measured stress-temperature curves during thermal cycling. Significant strain hardening is found to exist. Within the continuum plasticity framework, the measured stress-temperature response can only be described with a kinematic hardening model. The constitutive model is subsequently used for numerical thermomechanical modeling of Cu interconnect structures using the finite element method. The numerical analysis uses the generalized plane strain model for simulating long metal lines embedded within the dielectric above a silicon substrate. Various combinations of oxide and polymer-based low-k dielectric schemes, with and without thin barrier layers surrounding the Cu line, are considered. Attention is devoted to the thermal stress and strain fields and their dependency on material properties, geometry, and modeling details. Salient features are compared with those in traditional aluminum interconnects. Practical implications in the reliability issues for modern copper/low-k dielectric interconnect systems are discussed.

show abstract

Section: Introductionmentioning

confidence: 99%

Thermomechanical response and stress analysis of copper interconnects

Ege

Shen

2003

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…Applying the curvature method to passivated (encapsulated) line structures have also been reported [70,[241][242][243]. The X-ray diffraction [63,83,86,87,[244][245][246][247][248][249][250][251][252][253][254][255][256][257][258][259], Raman spectroscopy [260,261], and micromachine-based [262] techniques have also been developed and employed in measuring stresses in specially designed metal line structures.…”

Section: Basic Considerationmentioning

confidence: 99%

Externally constrained plastic flow in miniaturized metallic structures: A continuum-based approach to thin films, lines, and joints

Shen

2008

Progress in Materials Science

View full text Add to dashboard Cite

“…Thin films of aluminum and its alloys are employed as interconnects in deep submicron ultra-large scale integration (ULSI) as well as in interdigital transducers of surface acoustic waves microdevices [1][2][3][4][5][6]. Frequently, large intrinsic stress develops during film deposition independently of the growth method used (sputtering, evaporation, pulsed laser deposition, electrochemical deposition, chemical vapor deposition, etc).…”

Section: Introductionmentioning

confidence: 99%

In situstress evolution during and after sputter deposition of Al thin films

Pletea

Koch

Wendrock

et al. 2009

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

The stress, growth, and morphology evolution of Al thin films up to 300 nm thick, sputter deposited at a constant rate of 0.04 nm s(-1) onto thermally oxidized Si(100) substrates have been investigated for various sputter pressures in the range from 0.05 to 6 Pa. The stress evolution has been studied during and after the film deposition by means of in situ substrate curvature measurements using an optical two-beam deflection method. In order to obtain insight into the mechanisms of stress generation and relaxation, the microstructure of the films was investigated by scanning electron microscopy, focused-ion-beam microscopy, and atomic force microscopy. The stress evolution during the early stage of deposition of films is consistent with the Volmer-Weber growth mode known for metals with high adatom mobility. For thicker films, the compressive stress increases in the sputter pressure range of 0.05-0.5 Pa, whereas at even higher sputter pressures a transition from compressive to tensile stress takes place. This transition is correlated with a change from a relatively dense to a more porous microstructure characterized by decreasing mass density and increasing electrical resistivity with increasing sputter pressure. The dependence of the stress and microstructure on the sputter pressure can be consistently understood through a combination of the stress mechanisms for vapor and sputter deposited films proposed in the literature.

show abstract

Strain Analysis in Fine Al Interconnections by X-Ray Diffraction Spectrometry Using Micro X-Ray Beam

Cited by 12 publications

References 3 publications

Thermomechanical response and stress analysis of copper interconnects

Thermomechanical response and stress analysis of copper interconnects

Externally constrained plastic flow in miniaturized metallic structures: A continuum-based approach to thin films, lines, and joints

In situstress evolution during and after sputter deposition of Al thin films

Contact Info

Product

Resources

About