2014
DOI: 10.7567/jjap.53.04en06
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Strain affected electronic properties of bilayer tungsten disulfide

Abstract: The strain effect on the electronic properties of bilayer tungsten disulfide (WS2) is investigated by density functional theory (DFT). It is found that the band gap and carrier effective masses of AA and AB stacking bilayer WS2 decrease with increasing tensile strain. However, their band gap first increases under small compressive strain and then decreases with large compressive strain applied. These results can be explained by the interplay between the projected density of states contributed by the p-orbital … Show more

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Cited by 4 publications
(4 citation statements)
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“…Since J deformation > J non‑deformation , the barrier potential under strain (Φ deformation ) was smaller than that at a pristine state (Φ non‑deformation ). Consequently, this reduction of the Schottky barrier (right panel in Figure b) would facilitate the movement of electrons from PPy to the Al electrode, leading to a DC output. TENG and PENG were comprehensively introduced in previous reports, respectively.…”
Section: Results and Discussionmentioning
confidence: 99%
“…Since J deformation > J non‑deformation , the barrier potential under strain (Φ deformation ) was smaller than that at a pristine state (Φ non‑deformation ). Consequently, this reduction of the Schottky barrier (right panel in Figure b) would facilitate the movement of electrons from PPy to the Al electrode, leading to a DC output. TENG and PENG were comprehensively introduced in previous reports, respectively.…”
Section: Results and Discussionmentioning
confidence: 99%
“…It should be noted that at even larger compressive strain (ε > −3%), the band gap can be further decreased. [13][14][15]17) The effective masses is extracted along the K-Γ and K-M directions by fitting to the parabolic band. The effective mass along the K-Γ and K-M directions are almost the same.…”
Section: Resultsmentioning
confidence: 99%
“…Biaxial strain is applied to monolayer MoS 2 in the rhombus supercell structure by altering the lattice constants along the x-and y-directions. [13][14][15][16][17] The double gate FET structure is used, as shown in Fig. 1(c), for better gate controllability.…”
Section: Device Structure and Simulation Methodsmentioning
confidence: 99%
“…The directcurrent output origins from the mechanical-induced interfacial charge accumulation and the energy-band bending. As a result, the Schottky barrier between the conductive polymer and the metal that forms the Schottky contact reduces and drives the movement of electrons from conductive polymers to the other metal electrodes [36][37][38][39][40] .…”
Section: The Output Properties Of the Polymer-metal-schottky-contact-based Direct-current Generatorsmentioning
confidence: 99%