While there was no obvious bias in rates of referral, there is clearly a need for better ways to support Māori and Pacific people, and men in particular, to complete bariatric surgery. Further research is needed to clarify the socio-economic and cultural barriers that underlie this phenomenon.

Quantum transport properties of negative capacitance transistors (NC-FETs) with monolayer black phosphorus (ML-BP) are theoretically studied. Our calculations show that atomistic thin ML-BP can enhance the amplification effect of the ferroelectric layer, and subthreshold swing is effectively reduced to 27 mV per decade in ML-BP NC-FETs. Device performance can be further improved by increasing the thickness of ferroelectric layer and using thinner or high-k insulate layer. Due to the temperature dependence of ferroelectric layer ML-BP NC-FETs have higher on-state current at low temperature, which is different from that of MOSFETs. By considering the metal-ferroelectric interface layer, our calculations show that the device performance is degraded by the interface. Compared with the International Technology Roadmap (ITRS) 2013 requirements, ML-BP NC-FETs can fulfil the ITRS requirements for high-performance logic with a reduced supply voltage. The new device can achieve very low power delay product per device width at V D = 0.3 V, which is just 44% of that in ML-BP FETs.

Abstract-In this paper, we have studied the impact of quantum confinement on the performance of n-type silicon nanowire transistors (NWTs) for application in advanced CMOS technologies. The 3-D drift-diffusion simulations based on the density gradient approach that has been calibrated with respect to the solution of the Schrödinger equation in 2-D cross sections along the direction of the transport are presented. The simulated NWTs have cross sections and dimensional characteristics representative of the transistors expected at a 7-nm CMOS technology. Different gate lengths, cross-sectional shapes, spacer thicknesses, and doping steepness were considered. We have studied the impact of the quantum corrections on the gate capacitance, mobile charge in the channel, drain-induced barrier lowering, and subthreshold slope. The mobile charge to gate capacitance ratio, which is an indicator of the intrinsic speed of the NWTs, is also investigated. We have also estimated the optimal gate length for different NWT design conditions.