Storage element scaling impact on CNT memory retention and ON/OFF window

Rosendale, Glen; Viviani, Darlene; Manning, Monte; Huang, Xiaoping; Rueckes, Thomas; Wen, Shi Jie; Wong, Richard

doi:10.1109/imw.2014.6849391

Cited by 9 publications

(7 citation statements)

References 4 publications

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“…For memory, some researchers observe that cells have storage function via adopting the stable and heritable alternative states in bistable gene expression . Recently, the advance of carbon nanotube provides another possibility of manufacturing the nano‐devices with storage function . Based on these, ATV algorithm owns possibility to be applied in nano‐devices.…”

Section: Discussionmentioning

confidence: 99%

“…32 Recently, the advance of carbon nanotube provides another possibility of manufacturing the nano-devices with storage function. 33 Based on these, ATV algorithm owns possibility to be applied in nano-devices. As Section 4 described, the noise is assumed as the AWGN in demodulation, which makes the receiver capable of receiving more or less signal molecules in demodulation.…”

Section: Discussionmentioning

confidence: 99%

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Improving reliability performance of diffusion‐based molecular communication with adaptive threshold variation algorithm

Mao

Liu

et al. 2016

Int J Communication

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SUMMARYIn this work, we investigate the communication reliability for diffusion-based molecular communication, using the indicator of bit error rate (BER). A molecular classified model is established to divide molecules into three parts, which are the signal, inter-symbol interference (ISI) and noise. We expand each part separately using molecular absorbing probability, and connect them by a traditional-like formula. Based on the classified model, we do a theoretical analysis to prove the feasibility of improving the BER performance. Accordingly, an adaptive threshold variation (ATV) algorithm is designed in demodulation to implement the goal, which makes the receiver adapt the channel condition properly through learning process. Moreover, the complexity of ATV is calculated and its performance in various noisy channel is discussed. An expression of Signal to Interference plus Noise Ratio (SINR) is defined to verify the system performance. We test some important parameters of the channel model, as well as the ATV algorithm in the simulation section. The results have shown the performance gain of the proposal.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Improving reliability performance of diffusion‐based molecular communication with adaptive threshold variation algorithm

Mao

Liu

et al. 2016

Int J Communication

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“…In both memory cell array and single cell measurements, the reset BER is higher than the set BER. Regarding NRAM's retention error, in prior researches, NRAM cell arrays show stable resistance distribution after data retention, such as 150 • C, 24 hours [23] and 85 • C, 1000 years [24].…”

Section: Characteristics Of Nram Cell Arraymentioning

confidence: 99%

“…On the other hand, the AC scheme has an advantage to correct data retention error [30]. However, NRAM shows stable resistance distribution after data retention [23], [24]. Furthermore, the data retention error can also be recovered by regularly refreshing the memory cell array [20].…”

Section: B Comparison Of Rcrf and DImentioning

confidence: 99%

Reset-Check-Reverse-Flag Scheme on NRAM With 50% Bit Error Rate or 35% Parity Overhead and 16% Decoding Latency Reductions for Read-Intensive Storage Class Memory

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Iwasaki

Tanakamaru

et al. 2016

IEEE J. Solid-State Circuits

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A novel error correction scheme, called reset-checkreverse-flag (RCRF), is proposed to improve the reliability of storage class memories (SCMs). RCRF divides the conventional Bose-Chaudhuri-Hocquenghem (BCH) code length into multiple subsections. One flag bit is added to each subsection to correct program errors. By reversing the flag bit and user data, at least one reset error in each subsection can be recovered. A 4 Mbit carbon nanotube (CNT) based nano-random access memory (NRAM) cell array is measured to verify this scheme. During 10 8 write cycles, it is demonstrated that RCRF reduces the program bit error rate (BER) by 50% and only requires 0.4% extra array area for the flag bits. Next, BCH ECC is applied after RCRF to correct the remaining errors. Compared with the conventional BCH ECC-only approach, the proposed combination of RCRF and BCH ECC reduces parity overhead by 35% and ECC decoding latency by 16%. Therefore, RCRF is especially suited for read-intensive types of data storage, such as video and audio. On the other hand, for high endurance applications, RCRF and BCH ECC is also effective to improve the cycling reliability of resistive memories, and 50 times endurance extension is demonstrated for a 50 nm Al x O y resistive RAM (ReRAM) test chip.Index Terms-Carbon nanotube, emerging memory, error correcting code, memory controller, non-volatile memory, NRAM, reliability, solid-state drive, storage class memory.

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“…Emerging non-volatile memories, such as nano-random access memory (NRAM), resistive random access memory (ReRAM), and phase-change memory (PRAM) have advantages of fast program, large program endurance, and low program voltage compared with conventional non-volatile memory, such as NAND flash. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] Different physical mechanisms can be found on these emerging non-volatile memories. In specific, binary data "0" and "1" is stored in ReRAM by switching the cell resistance between high resistance state (HRS) and low resistance state (LRS).…”

Section: Introductionmentioning

confidence: 99%

Carbon nanotube memory cell array program error analysis and tradeoff between reset voltage and verify pulses

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Iwasaki

Hachiya

et al. 2016

Jpn. J. Appl. Phys.

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In emerging non-volatile memories, nano-random access memory (NRAM) has advantages of small program current and high endurance compared with resistive RAM (ReRAM) and phase-change RAM (PRAM). This work comprehensively investigates NRAM set and reset program characteristics by measuring a 116 nm 4 Mbit NRAM cell array. Specifically, reset is found more dependent on reset voltage than reset current. Next, NRAM set and reset bit error rates (BERs) have less significant reduction compared with the increased ratio of set and reset pulse widths. The reset BER can also be reduced by applying multiple reset pulses. Moreover, 108 write cycles are measured on 256 bytes NRAM cells, no wear-out or broken cell is found. Finally, the program characteristics of two verify-reset schemes are compared. The maximum verify-reset voltage can be reduced by increasing the number of reset pulses.

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Storage element scaling impact on CNT memory retention and ON/OFF window

Cited by 9 publications

References 4 publications

Improving reliability performance of diffusion‐based molecular communication with adaptive threshold variation algorithm

Improving reliability performance of diffusion‐based molecular communication with adaptive threshold variation algorithm

Reset-Check-Reverse-Flag Scheme on NRAM With 50% Bit Error Rate or 35% Parity Overhead and 16% Decoding Latency Reductions for Read-Intensive Storage Class Memory

Carbon nanotube memory cell array program error analysis and tradeoff between reset voltage and verify pulses

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