Stoichiometry issues in pulsed-laser deposition of alloys grown from multicomponent targets

Arnold, Craig B.; Aziz, Michael J.

doi:10.1007/s003390051349

Cited by 33 publications

(29 citation statements)

References 11 publications

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“…October 13, 2007 p. 4 Additionally, there are a number of practical advantages of PLD, including "congruent transfer" from the target (under some circumstances [7]); layer-by-layer control by using multiple targets sequentially; the ability to ablate virtually any target; and the ability to deposit in reactive atmospheres for doping, alloying, or compound formation.…”

Section: Film Growth Mechanisms In Pldmentioning

confidence: 99%

Film growth mechanisms in pulsed laser deposition

Aziz¹

2008

Appl. Phys. A

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This paper reviews our recent studies of the fundamentals of growth morphology evolution in Pulsed Laser Deposition in two prototypical growth modes: metal-on-insulator island growth and semiconductor homoepitaxy. By comparing morphology evolution for pulsed laser deposition and thermal deposition in the same dual-use chamber under identical thermal, background, and surface preparation conditions, and varying the kinetic energy by varying the laser fluence or using an inert background gas, we have isolated the effect of kinetic energy from that of flux pulsing in determining the differences between morphology evolution in these growth methods.In each growth mode analytical growth models and Kinetic Monte Carlo simulations for thermal deposition, modified to include kinetic energy effects, are successful at explaining much of what we observe experimentally.

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Section: Film Growth Mechanisms In Pldmentioning

confidence: 99%

Film growth mechanisms in pulsed laser deposition

Aziz¹

2008

Appl. Phys. A

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“…Поріг абляції для даної речовини відповідає питомій потужності лазерного випромінювання (10 нс, 10 Гц, 1064 нм) 1,5×10 7 Вт/cм 2 [12]. Стосовно наявності на плівках крапель, то їх утворення потребує подальшого вивчення [13,14]. Відносно цього питання можемо вказати на три механізми їх формування.…”

Section: техніка і методикаunclassified

Investigation of mikrostoichiometrical composition of YBa2Сu3O7 thin-films prepared in different regimes of laser deposition

Kacher¹,

Томашпольский²,

Чучман³

et al. 2009

Sci.Herald.Uzh.Univ.Ser.Phys

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“…Doped ZnS thin films have been deposited using several methods [6], and PLD is regarded as a very promising technique [7], although depositing films with varying doping concentrations can be challenging: the conventional method is to ablate a single target for each composition, since stoichiometric transfer occurs in most cases in PLD [8], although non-stochiometric transfer also can occur [9]. A drawback of this technique is that the dopant concentration is fixed and varying it requires production of several targets, which is a time consuming task.…”

Section: Introductionmentioning

confidence: 99%