Stoichiometric ScN and nitrogen deficient scandium nitride layers studied by photoelectron spectroscopy

Porte, L.

doi:10.1088/0022-3719/18/36/024

Cited by 23 publications

(16 citation statements)

References 18 publications

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“…40 This is discussed in terms of a vacancy stabilization mechanism emphasizing the role of metal-metal interactions that form around a nitrogen vacancy. 41 Huisman et al 42 had shown that it is possible for vacancies to lower the total energy (increase the bond strength) of a compound due to the appearance of vacancy-induced defect states below the Femi level caused by clusters of atoms of one of the constituents. In the B1 type structure of the TMNs, removing a nitrogen atom allows the six metal atoms surrounding the vacancy to form strengthened metallic bonding while the covalent bonding is weakened.…”

Section: Resultsmentioning

confidence: 99%

The plasma assisted synthesis and high pressure studies of the structural and elastic properties of metal nitrides XN (X = Sc, Y)

et al. 2014

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Section: Resultsmentioning

confidence: 99%

The plasma assisted synthesis and high pressure studies of the structural and elastic properties of metal nitrides XN (X = Sc, Y)

et al. 2014

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“…A depth-profile composition analysis of the sample 2.2 RT by x-ray photoelectron spectroscopy gave an average concentration (Mg/(Mg+Sc+N)) around 2.2 at.% at a plateau (50-300 nm depth) plus a presence of oxygen at 9 at.% (see Supplemental Material, figure S6). Even with a base pressure of 610 -8 torr, oxygen incorporation at several at.% level in ScN occurs due to the high reactivity of Sc with oxygen from residual water during deposition [18,32,33,[43][44][45][46]. Gregoire et.…”

Section: Methodsmentioning

confidence: 99%

Effect of ion-implantation-induced defects and Mg dopants on the thermoelectric properties of ScN

et al. 2018

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For applications in energy harvesting, environmentally friendly cooling, and as power sources in remote or portable applications, it is desired to enhance the efficiency of thermoelectric materials. One strategy consists of reducing the thermal conductivity while increasing or retaining the thermoelectric power factor. An approach to achieve this is doping to enhance the Seebeck coefficient and electrical conductivity, while simultaneously introducing defects in the materials to increase phonon scattering. Here, we use Mg ion implantation to induce defects in epitaxial ScN (111) films. The films were implanted with Mg + ions with different concentration profiles along the thickness of the film, incorporating 0.35 to 2.2 at.% of Mg in ScN. Implantation at high temperature (600 ˚C), with few defects due to the temperature, does not substantially affect the thermal conductivity compared to a reference ScN. Samples implanted at room temperature, in contrast, exhibited a reduction of the thermal conductivity by a factor of three. The sample doped with 2.2 at.% Mg also showed an increased power factor after implantation. This study thus shows the effect of ion-induced defects on thermal conductivity of ScN films. High-temperature implantation allows the defects to be annealed out during implantation, while the defects are retained for room-temperature implanted samples, allowing for a drastic reduction in thermal conductivity.

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“…In the electronic industry they are important as electric contact, diffusion barriers, buffer layer, among other uses. In the last years there has been an increased awareness in scandium, yttrium and lanthanum nitrides due to their semiconducting properties [3][4][5][6][7][8][9]. In contrast with traditional semiconductors the group IIIB TMN is interstitial alloys; thereafter they could have a wide array of chemical compositions [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

First principles study on the formation of yttrium nitride in cubic and hexagonal phases

Soto¹,

Moreno-Armenta²,

Reyes-Serrato³

2008

Computational Materials Science

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We have studied the formation of yttrium nitride in which the Y-atoms were arranged in two common close-packed stacking: The AB-stacking (hcp-symmetry) is the ground state of metallic yttrium; while the ABC-stacking (fcc-symmetry) is the ground state of yttrium nitride. Given the different symmetries between YN and Y, there must be a phase transition (hcp → fcc) as N is incorporated in the Y-lattice. By means of first principles calculations we have made a systematical investigation where N was gradually incorporated in octahedral interstices in AB and ABC stacking of Y. We report the heat of formation, bulk modulus, lattice parameter and electronic structure of the resultant nitrides. We found that both metal arrangements are physically achievable. Furthermore, for low nitrogen incorporation the two phases may coexist. However for high nitrogen concentration the cubic phases are favored by a 30 kJ mol -1 margin.These results are important since fcc-YN is semiconducting and could be utilized as active layer in electronic devices.

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Stoichiometric ScN and nitrogen deficient scandium nitride layers studied by photoelectron spectroscopy

Cited by 23 publications

References 18 publications

The plasma assisted synthesis and high pressure studies of the structural and elastic properties of metal nitrides XN (X = Sc, Y)

The plasma assisted synthesis and high pressure studies of the structural and elastic properties of metal nitrides XN (X = Sc, Y)

Effect of ion-implantation-induced defects and Mg dopants on the thermoelectric properties of ScN

First principles study on the formation of yttrium nitride in cubic and hexagonal phases

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