Stochastic simulation studies of molecular resists for the 32nm technology node

Drygiannakis, D.; Patsis, G. P.; Τσικρικάς, Ν.; Kokkoris, George; Boudouvis, Andreas G.; Raptis, Ioannis; Gogolides, Εvangelos; Argitis, Panagiotis

doi:10.1016/j.mee.2007.12.072

Cited by 12 publications

(9 citation statements)

References 10 publications

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“…23,24 The major issue for chemically amplied resists (CAR) is to simultaneously satisfy the manufacturing requirements for resolution, line width roughness, and sensitivity (RLS). Although the factors determining the RLS trade-off relationship are still under investigation, 25,26 it has been shown that CARs based on molecular 27,28 rather than polymeric resists have the potential for lower line width roughness (LWR) 29 and higher resolution while maintaining good sensitivity. We have previously developed a series of chemically amplied e-beam resists based on fullerene derivatives containing polyethyleneglycol side chains, 30,31 which have shown high sensitivity, high resolution, good LWR and excellent etch durability.…”

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confidence: 99%

Chemically amplified phenolic fullerene electron beam resist

et al. 2014

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Molecular resist materials for electron beam lithography have received significant interest as a route to reducing line width roughness and improving resolution. However, they have often required the use of hazardous solvents in their processing. A new family of fullerene based negative tone chemically amplified e-beam resists, using industry compatible solvents, has been developed. A sensitivity of $40 mC cm À2 was achieved at 20 keV. Isolated features with a line width of 13.6 nm as well as $20 nm lines on a 36 nm pitch have been patterned, whilst one variant has demonstrated resolution to 15 nm halfpitch at slightly higher dose.

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confidence: 99%

Chemically amplified phenolic fullerene electron beam resist

et al. 2014

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“…The etching of the resist sidewall by the trimming process is approximated by an isotropic etching process: The resist profile or surface is moving under an isotropic etching rate [26][27][28][29][30] . The level set method, which is based on the notion of the implicit functions, is used for the evolution of the surfaces 31,32 .…”

Section: Modeling Resultsmentioning

confidence: 99%

Line edge roughness transfer during plasma etching: modeling approaches and comparison with experimental results

Constantoudis

Kokkoris

Xydi

et al. 2009

Advances in Resist Materials and Processing Technology XXVI

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In this paper, both modeling and experimental results for the effects of plasma etching on photoresist Line Edge and Width Roughness (LER/LWR) and their transfer to underlayer films are presented and compared. In particular, we investigate the roughness formation on both photoresist and underlayer sidewalls during a) isotropic trimming of photoresist, b) anisotropic plasma etching and LER transfer to substrate, and c) photoresist trimming followed by anisotropic plasma etching of the substrate. The trimming process is modeled with an (2D or 3D) isotropic movement of the resist sidewall. In the anisotropic plasma etching process, the resist sidewall is used as a mask to anisotropically transfer the pattern to the underlying film. Experiments include trimming of 193nm photoresist in O 2 plasma with no bias voltage and anisotropic etching of BARC and Si underlayers in CF 4 and HBr/Cl 2 /O 2 with bias. Both model and experimental results show that resist trimming causes reduction of resist LWR and increase of the correlation length and roughness exponent with trimming time. This means that surface features vs trimming time become lower, wider and with less high frequency fluctuations. In the case of anisotropic etching, model predicts noticeable reduction of LWR whereas, correlation length and roughness exponent remain almost unaffected. The first experimental results seem to confirm these predictions. As regards the resist trimming followed by anisotropic etching, modeling results predict that the intervention of an isotropic trimming process before pattern transfer does not lead to larger LWR reduction.

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“…Resists based on small molecules such as oglimers 1 , molecular glasses 2-4 , liquid crystals 5,6 and inorganic materials 7 have the potential to improve lithographic performance -particularly line width roughness -over conventional polymeric resists 8 . Additionally, to avoid pattern collapse at high-resolution it is preferable to use extremely thin resist films, demanding that the resist has high etch durability for good pattern transfer.…”

Section: Introductionmentioning

confidence: 99%

Positive-tone chemically amplified fullerene resist

et al. 2012

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With continuing efforts to achieve higher lithographic resolution there has been on-going interest in the development of low molecular weight resists, such as molecular glasses. Here we present the initial results of a study into the development of a positive tone two component chemically amplified resist based on methanofullerene derivatives (MF) with acid labile groups (tert-butyl acetate (tBAC); tert-butoxycarbonyl (tBOC)). Mono, di, tris and hexa adducts of MFtBAC together with mono and di adducts of MF-tBOC have been evaluated with several photoacid generators. Sensitivities as high as 11 µC/cm 2 have been achieved in some cases and sub-100 nm features have been patterned.

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Stochastic simulation studies of molecular resists for the 32nm technology node

Cited by 12 publications

References 10 publications

Chemically amplified phenolic fullerene electron beam resist

Chemically amplified phenolic fullerene electron beam resist

Line edge roughness transfer during plasma etching: modeling approaches and comparison with experimental results

Positive-tone chemically amplified fullerene resist

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