Stochastic simulation studies of molecular resists

Drygiannakis, D.; Patsis, G. P.; Raptis, Ioannis; Niakoula, Dimitra; Vidali, Veroniki P.; Couladouros, Elias A.; Argitis, Panagiotis; Gogolides, Εvangelos

doi:10.1016/j.mee.2007.01.044

Cited by 23 publications

(11 citation statements)

References 10 publications

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“…These molecules can be characterized by the presence of significant free volume and by disorder in both intermolecular distance and orientation [8] . It was recently reported through stochastic simulation studies that MG resist films have potential to attain lower LER compared to polymeric materials due to the small segment size of free volume distribution [9] .…”

Section: Introductionmentioning

confidence: 99%

Molecular glass resists for next generation lithography

et al. 2008

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The idea of using small molecules instead of polymers for next generation lithography may enable improved resolution and line edge roughness (LER). Rather than using polymeric materials we are focusing on a new class of materials known as molecular glasses (MGs). These are low molecular weight organic materials that demonstrate high glass transition temperatures despite their modest size. Unlike polymeric resists, these molecules have the added advantages of distinct size and uniformity. We have synthesized a series of molecular resists containing rigid aromatic backbones and phenolic moieties suited for electron beam and Extreme Ultraviolet (EUV) lithography as both positive tone and negative tone photoresists. An increase in glass transition temperature is observed with increasing size and rigidity. Glass transition temperatures (Tgs) between 80-130°C have been observed for t-BOC protected positive tone resists with molecular weights within the range of 800-1200g/mol. MGs with branched, dense structures are explored to design high Tg resist systems with improved sensitivity and contrast. The effects of protection ratio, high and low activation protecting groups, post exposure bake conditions, etch resistance and outgassing have been tested using selected phenolic MG resists. These new resist architectures are synthesized and evaluated to attain sub 30nm feature sizes required of candidates for next generation lithography.

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Section: Introductionmentioning

confidence: 99%

Molecular glass resists for next generation lithography

et al. 2008

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“…Recent stochastic simulations studies further illustrate this point, as thin films of MG resists demonstrate consistently lower LER values due to the smaller segments of free volume in MG systems that can inhibit the diffusion of acid molecules. [7] 3. Design Guidelines…”

Section: Concept Of Molecular Glassesmentioning

confidence: 99%

Molecular Glass Resists as High‐Resolution Patterning Materials

2008

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The success of the semiconductor industry is based on the ability to fabricate hundreds of millions of devices on a single chip. In order to fulfill the ever‐shrinking feature sizes, the industry requires new patternable materials in order to operate in the sub‐50 nm regime. Molecular glass (MG) resists are a new type of patterning material that has gained considerable attention over the past few years. This Research News article describes the chemical and structural aspects of MGs as well as important concepts of MG resist design. We also highlight some of the recent advances in high‐resolution patterning capabilities with next‐generation imaging tools.

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“…1 As depicted in Figure 1, it has been hypothesized that, if properly designed, these smaller, more homogenous and isotropic molecules will afford smoother lines after development, and thus might enable improvements in LWR without compromising resolution and sensitivity. 2,3 Over the past decade, numerous types of molecular glasses have been designed and evaluated. For positive tone-type resists, MGs have been derived from polyphenolic core structures including dendrimers, 4,5 polyphenols 6 , Noria, 7 truxenes 8 and calixarenes 9 , representative examples of which are depicted in Figure 2.…”

Section: Introductionmentioning

confidence: 99%