Development of molecular resist derivatives for EUV lithography

Green, D. Patrick; Jain, Vipul; Bailey, Brad C.; Wagner, Mike; Clark, Michael B.; Valeri, David; Lakso, Steve

doi:10.1117/12.2011805

Cited by 12 publications

(8 citation statements)

References 7 publications

(9 reference statements)

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“…A property related to some extent to polymorphism is an ability of a crystalline compound to exist also in more or less stable amorphous or compact glass form . For calixarenes, this issue has a practical dimension. − Amorphous materials are often preferred as a starting point for polymorph screening, where they are used as giving more oversaturated solutions or as suspensions with a possibility to form metastable polymorphs . Solvent vapor sorption by amorphous materials with molecular packing may be a part of the polymorph preparation procedure .…”

Section: Introductionmentioning

confidence: 99%

Smart Polymorphism of Thiacalix[4]arene with Long-Chain Amide Containing Substituents

Gataullina

Зиганшин

Stoikov

et al. 2017

Crystal Growth & Design

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A problem of controlled (smart) formation of polymorphs was solved for a set of tert-butylthiacalix[4]arene derivatives with four N-(2-acetoxyethyl)carbamoylmethoxy substituents at the lower rim with 1,3-alternate, cone, and partial cone conformations. For this, an effective polymorph screening with a reproducible influence of preparation history was achieved using guest vapor inclusion and a standard state of host glass powder. By this procedure with consequent guest release and heating, the ability of the studied calixarenes for polymorphism was investigated and compared as a function of their macrocycle conformation. The data of simultaneous thermogravimetry and differential scanning calorimetry with mass spectrometry of evolved vapors were determined together with the data of powder X-ray diffraction for the initial host samples, intermediate clathrates, and final polymorphs. In addition, single crystal X-ray diffraction data were obtained for four crystalline forms of the studied calixarenes. The results yielded a structure–property relationship, where 1,3-alternate calixarene without an extended H-bonded supramolecular network at least in one crystalline form has a much higher ability for polymorphism than the other two conformations. Thus, 10 polymorphs with essentially different crystal packing were found for this calixarene including a unique tetramorphism with four consecutive melting points of guest-free polymorph and corresponding three crystallization ranges. This ability of 1,3-alternate calixarene is linked with its other smart property: selective crystallization of its compact glass in vapors of binary liquid mixtures, which can be used for visual detection of very small benzene impurities (0.5% (v/v)) in cyclohexane.

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Section: Introductionmentioning

confidence: 99%

Smart Polymorphism of Thiacalix[4]arene with Long-Chain Amide Containing Substituents

Gataullina

Зиганшин

Stoikov

et al. 2017

Crystal Growth & Design

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“…(a) Comparison of various EUV resists design principles, such as CARs, 62 – 69 multitriggers, 70 – 73 n-CARs, 74 , 75 inorganics, 76 , 77 poly-HSQ, 78 and MOCs, 79 – 82 based on sensitivity towards EUVL and (b) pictorial representation of ultra-high EUV sensitive (2.3 mJ/cm2) of developed In-MAA MOC resists for many folds augmentation of fab-out wafers throughput of next-generation EUVL technology.…”

Section: Resultsmentioning

confidence: 99%

“…where k is associated with the factors related to the optical losses that occur due to the presence of reflective mirrors in the optical route of the EUV light, 83 E D is dose-to-set for negative tone Fig. 6 (a) Comparison of various EUV resists design principles, such as CARs, [62][63][64][65][66][67][68][69] multitriggers, [70][71][72][73] n-CARs, 74,75 inorganics, 76,77 poly-HSQ, 78 and MOCs, [79][80][81][82] resists, P is the power of the EUVL source, and T th is the throughput of the EUVL system (wafers per hour). Here, Eq.…”

Section: Mechanistic Analysis Of In-maa Mocs Resist Formulationmentioning

confidence: 99%

Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications

Chauhan

Palit

Choudhary

et al. 2022

J. Micro/Nanopattern. Mats. Metro.

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Background: An incredible increase in the integration of electronic chips has pushed the semicon industries to endorse high numerical aperture (h-NA ∼ 0.5), extreme-ultraviolet (EUV) lithography (EUVL) (λ ∼ 13.5 nm) at the commercial scale. Induction of h-NA postulates EUV resists that could outperform the resolution, line pattern roughness, and sensitivity (RLS) tradeoff for chip fabricators, which is currently extremely limited. Aim:The development of EUV resist to balance RLS trade-off as well as overcome throughput limitations of h-NA EUV system to facilitate high volume semiconductor manufacturing.Approach: Here, we developed indium-methacrylic acid-based metal-organic clusters resist for h-NA, EUVL. To examine the h-NA single exposure patterning potential of the resist, prescreening by sub-10 nm next-generation lithography (NGL) tools such as electron beam lithography (EBL), and helium ion beam lithography (HIBL) were conducted as a prelude to EUV exposure.Results: Dense ∼13 nm, (l/s) patterns at ∼45 and ∼30 μC∕cm 2 were well resolved by EBL and HIBL, on the top this the line edge roughness (LER) was 2.48 AE 0.04 nm, and etch resistance ∼1.98 and ∼0.34 times lower than Si and SiO 2 ∕Si systems. Also, In-MAA MOCs resist shows ultra-sensitivity of 2.3 mJ∕cm 2 towards h-NA EUVL for patterning up to 26 nm half-pitch line patterns with LER ∼2.36 AE 0.16 nm.

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“…They studied the relationship between the structure and the properties of MG resists in order to improve the lithographic performance. They created patterns with 28 nm 1:1 space lines using EUV exposure [77]. Frommhold et al developed a new molecular resist system that showed high resolution capability.…”

Section: Molecular Chemically Amplified Systemsmentioning

confidence: 99%

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

2020

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The need for decreasing semiconductor device critical dimensions at feature sizes below the 20 nm resolution limit has led the semiconductor industry to adopt extreme ultra violet (EUV) lithography with exposure at 13.5 nm as the main next generation lithographic technology. The broad consensus on this direction has triggered a dramatic increase of interest on resist materials of high sensitivity especially designed for use in the EUV spectral region in order to meet the strict requirements needed for overcoming the source brightness issues and securing the cost efficiency of the technology. To this direction both fundamental studies on the radiation induced chemistry in this spectral area and a plethora of new ideas targeting at the design of new highly sensitive and top performing resists have been proposed. Besides the traditional areas of acid-catalyzed chemically amplified resists and the resists based on polymer backbone breaking new unconventional ideas have been proposed based on the insertion of metal compounds or compounds of other highly absorbing at EUV atoms in the resist formulations. These last developments are reviewed here. Since the effort targets to a new understanding of electron-induced chemical reactions that dominate the resist performance in this region these last developments may lead to unprecedented changes in lithographic technology but can also strongly affect other scientific areas where electron-induced chemistry plays a critical role.

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Development of molecular resist derivatives for EUV lithography

Cited by 12 publications

References 7 publications

Smart Polymorphism of Thiacalix[4]arene with Long-Chain Amide Containing Substituents

Smart Polymorphism of Thiacalix[4]arene with Long-Chain Amide Containing Substituents

Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

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