Stochastic Filament Formation on the Cycling Endurance of Backfilled Contact Resistive Random Access Memory Cells

Kao, Yun-Feng; Lin, Chrong Jung; King, Ya‐Chin

doi:10.1109/vlsi-tsa.2019.8804707

Cited by 2 publications

(2 citation statements)

References 4 publications

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“…5a. After each stress pulse, the states of BCRRAM are then verified to determine whether V WL /V SL needs to be increased for the next set/reset operations [38]. As displayed in Fig.…”

Section: Cyclability and Reset Recovery Schemementioning

confidence: 99%

An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array

et al. 2021

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As one of the most promising embedded non-volatile storage solutions for advanced CMOS modules, resistive random access memory’s (RRAM) applications depend highly on its cyclability. Through detailed analysis, links have been found between noise types, filament configurations and the occurrence of reset failure during cycling test. In addition, a recovery treatment is demonstrated to restore the cyclability of RRAM. An early detection circuit for vulnerable cells in an array is also proposed for further improving the overall endurance of an RRAM array. Lifetime of RRAM can be extended to over 10 k cycles without fail bits in an array.

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“…5a. After each stress pulse, the states of BCRRAM are then verified to determine whether V WL /V SL needs to be increased for the next set/reset operations [38]. As displayed in Fig.…”

Section: Cyclability and Reset Recovery Schemementioning

confidence: 99%

An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array

et al. 2021

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“…After obtaining suitable LRS/HRS levels with short pulse, cycling endurance of BCRRAM is examined through an optimized incremental step pulse programming scheme (ISPP) [61]. Cell arrays during cycling test are monitored for investigating the change in the CF topographies.…”

Section: Reset Trimming Schemementioning

confidence: 99%

Reset Variability in Backfilled Resistive Random Access Memory and Its Correlation to Low Frequency Noise in Read

Kao

Lin

King

2020

IEEE J. Electron Devices Soc.

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Fast and stable switching between states is one of the key factors for the success resistive random access memory (RRAM) development. In an array, wide reset efficiency variation in RRAM cells is found to link to the characteristics of its low frequency noise (LFN) in bit-cell current. Through Monte Carlo simulation on randomly placing conductive filaments (CF), LFN characteristics correspond to the densities of the CF in the RRAM film. Further correlations between LFN features and the reset efficiency are found. In addition, CF topography are found to change after long term cycling tests. A trimming process is proposed to minimize the impacts of stochastic CF generation, leading to increase reset speed.INDEX TERMS Variability, resistive random access memory, low frequency noise, Monte Carlo simulation, conductive filament.

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Stochastic Filament Formation on the Cycling Endurance of Backfilled Contact Resistive Random Access Memory Cells

Cited by 2 publications

References 4 publications

An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array

An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array

Reset Variability in Backfilled Resistive Random Access Memory and Its Correlation to Low Frequency Noise in Read

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