Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer

Gorchon, Jon; Curiale, J.; Lemaı̂tre, A.; Moisan, Nicolas; Cubukcu, M.; Malinowski, Grégory; Ulysse, C.; Faini, G.; Bardeleben, H. J. von; Jeudy, V.

doi:10.1103/physrevlett.112.026601

Cited by 10 publications

(9 citation statements)

References 30 publications

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“…In agreement with Gorchon et al (2014), close below H dep a critical depinning regimen is observed for m 0 H > 12 mT, where the velocity fits as, The exponent 1/4 fits the data well and as shown before is theoretically predicted for interactions of one-dimensional DWs with two-dimensional weak random disorder in thin magnetic films with PMA.…”

Section: E-field Control Of Domain Wall Nucleation and Propagationsupporting

confidence: 86%

Recent developments in the manipulation of magnetic domain walls in CoFeB–MgO wires for applications to high-density nonvolatile memories

Ravelosona¹,

Diez²,

Zhao³

et al. 2015

Magnetic Nano- And Microwires

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Section: E-field Control Of Domain Wall Nucleation and Propagationsupporting

confidence: 86%

Recent developments in the manipulation of magnetic domain walls in CoFeB–MgO wires for applications to high-density nonvolatile memories

Ravelosona¹,

Diez²,

Zhao³

et al. 2015

Magnetic Nano- And Microwires

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“…by an electric field [6,7]. Current induced domain wall switching and motion have been demonstrated in GaMnAs [4,5,8] and GaMnAsP quaternary alloy [9][10][11]. In those investigations, a perpendicular magnetic anisotropy (PMA) is required for the ferromagnetic semiconductors [8][9][10][11].…”

mentioning

confidence: 99%

“…Current induced domain wall switching and motion have been demonstrated in GaMnAs [4,5,8] and GaMnAsP quaternary alloy [9][10][11]. In those investigations, a perpendicular magnetic anisotropy (PMA) is required for the ferromagnetic semiconductors [8][9][10][11]. Homoepitaxial GaMnAs on GaAs substrate normally exhibits in-plane magnetic anisotropy due to the compressive strain along its in-plane direction.…”

mentioning

confidence: 99%

“…Homoepitaxial GaMnAs on GaAs substrate normally exhibits in-plane magnetic anisotropy due to the compressive strain along its in-plane direction. The PMA in GaMnAs has been realized by two approaches: The mostly used one is to tune the strain from compressive to tensile state in GaMnAs either by applying InGaAs as buffer [8,9] or by coalloying GaMnAs with phosphorus [10][11][12][13]. The other one is to change the localization of holes in the GaMnAs layer, by co-alloying Al [14][15][16][17].…”

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confidence: 99%

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High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films

Yuan¹,

Wang²,

Gao³

et al. 2015

J. Phys. D: Appl. Phys.

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Abstract:We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In 1-x Mn x As epilayer depends on the Mn concentration x, reaching 82 K for x=0.105. The substitution of Mn ions at the Indium sites induces a compressive strain perpendicular to the InMnAs layer and a tensile strain along the in-plane direction. This gives rise to a large perpendicular magnetic anisotropy, which is often needed for the demonstration of electrical control of magnetization and for spin-transfer-torque induced magnetization reversal.

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“…2 (a) and (e)) was prepared) using current induced stochastic domain nucleation and DW propagation (see ref. 26 for details) starting from a uniform magnetization state. Next a DC current was injected between the two elec- Figure 2.…”

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confidence: 99%

Current-induced fingering instability in magnetic domain walls

et al. 2015

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The shape instability of magnetic domain walls under current is investigated in a ferromagnetic (Ga,Mn)(As,P) film with perpendicular anisotropy. Domain wall motion is driven by the spin transfer torque mechanism. A current density gradient is found either to stabilize domains with walls perpendicular to current lines or to produce finger-like patterns, depending on the domain wall motion direction. The instability mechanism is shown to result from the non-adiabatic contribution of the spin transfer torque mechanism. ... These instabilities originate from a competition between the surface tension which tends to favor flat interfaces and a destabilizing interaction as a gradient of external driving force (temperature, gravitational field, magnetic field...) or as long range dipolar interactions 10,11 for quasi-two-dimensional systems 12 . A crucial point for understanding interface dynamics as well as domain pattern formation is to determine the parameters controlling the instabilities and their formation mechanism.In ferromagnetic systems, it was shown recently that domain walls (DWs) can be moved by a spin polarized current 13-16 through the so-called spin transfer torque (STT) [17][18][19][20] . This has motivated an intense research effort for elucidating the physics of STT and for potential application in spin-electronics 21,22 . The STT acts as a driving force proportional to the current density. As expected by analogy with the well studied field-driven dynamics, essentially two dynamical regimes are observed. At low drive, DWs move in the pinning-dependent creep regime. Above a depinning threshold, the dynamics corresponds to flow regimes limited by dissipation 16 . Current-driven DW dynamics is most generally studied in narrow tracks, where DWs remain stable over the track width. However, field and current-driven dynamics exhibit, in extended a) Electronic mail: vincent.jeudy@u-psud.fr geometry, quite different behavior. A magnetic field acts essentially as a magnetic pressure pushing DWs with an average uniform velocity. In contrast, the current-driven creep regime was found to result in the formation of triangular domain-shapes 23 . In the flow regime 24 , the DW velocity was shown to depend on the respective orientations of the DW and the current flow. Those observations suggest a complex interplay between the DW shape and dynamics, and the STT magnitude. In this frame, it is particularly interesting to characterize the shape stability of DW driven by current. To address this issue, we investigated DW motion under current in wide geometries where instabilities induced by current and/or dipolar interactions can develop and be visualized. We used a (Ga,Mn)(As,P) thin film with perpendicular magnetization, as in this material, a wide range of dynamical regimes can be accessed thanks to its extraordinary weak current density required to induce DW motion. To get a better understanding of the role of current induced motion on DW stability, we introduce, on purpose, a progressive current density gradient by p...

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Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer

Cited by 10 publications

References 30 publications

Recent developments in the manipulation of magnetic domain walls in CoFeB–MgO wires for applications to high-density nonvolatile memories

Recent developments in the manipulation of magnetic domain walls in CoFeB–MgO wires for applications to high-density nonvolatile memories

High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films

Current-induced fingering instability in magnetic domain walls

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