2002
DOI: 10.1016/s0039-6028(02)01511-x
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STM study of a grain boundary in graphite

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Cited by 157 publications
(179 citation statements)
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“…This is consistent with the structure of topological defects in polycrystalline monolayer graphene discussed below. Later, the interest in GB defects in graphene was renewed with the advent of scanning tunnelling microscopy (STM) for investigating surfaces [27][28][29][30] . Scanning tunnelling spectroscopy (STS) allowed the local electronic properties of these defects in graphite to be investigated in detail 31 .…”
Section: Structure Of Polycrystalline Graphenementioning
confidence: 99%
“…This is consistent with the structure of topological defects in polycrystalline monolayer graphene discussed below. Later, the interest in GB defects in graphene was renewed with the advent of scanning tunnelling microscopy (STM) for investigating surfaces [27][28][29][30] . Scanning tunnelling spectroscopy (STS) allowed the local electronic properties of these defects in graphite to be investigated in detail 31 .…”
Section: Structure Of Polycrystalline Graphenementioning
confidence: 99%
“…The first approach involves local two-point measurements, which are accomplished with STM and scanning tunneling spectroscopy (STS). [16,200,201,202,24,23] With these measurements, it is possible to deduce the local electronic density of states, the local charge density, and the charge scattering mechanisms associated with GGBs, thus permitting the spatially-dependent electrical characterization of GGBs at the atomic scale. The second approach involves four-probe measurements, which can be used to analyze the influence of individual GGBs at a scale of several micrometers.…”
Section: Measurement Of Electrical Transport Across Ggbsmentioning
confidence: 99%
“…Two-probe STM and STS techniques can be used to locally study the electrical properties of GGBs. [16,200,202,24,23] By varying the voltage and position of the STM tip, it is possible to determine the nature of localized states, the charge doping, and the local scattering mechanism corresponding to a given morphology of the GGB. One example of such analysis is shown in Fig.…”
Section: Measurement Of Electrical Transport Across Ggbsmentioning
confidence: 99%
“…To produce large areas of high quality graphene, carbon grain boundaries must be reduced by both controlling and optimizing the number of C-rich seed regions. Identifying optimal growth conditions that i) minimize the number of atomic scale defects in a graphene sheet [114], ii) minimize the presence of grain boundaries [115], and iii) eliminate interstitial carbon atoms [116,117,118,119,120] between the graphene sheets presents a formidable challenge. Before fabricating high quality graphene-based electronic devices on an industrial scale, many of these important questions must first be addressed.…”
Section: Introductionmentioning
confidence: 99%