STM observation of the 2×3 and c(2×6) structures on Ba/Si(100)

Ojima, Kaoru; Yoshimura, Masamichi; Ueda, Kazuyuki

doi:10.1016/s0039-6028(01)01392-9

Cited by 27 publications

(23 citation statements)

References 22 publications

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“…We found excellent agreement between our experimental STM data and the simulated STM images obtained based on the structural model initially proposed for the Sr/Si(001) system. We therefore conclude that the periodic 2 × 3 Ba-incorporated phase on Ge(001) is structurally identical to that on Sr/Si(100) [26,27,32] and as such is not consistent with the early models proposed by Du et al [17], Hu et al [19], and Ojima et al [25] Furthermore, comparison of our STM and DFT data enabled us to assign structure of a number of defects observed within regions of Ba-induced 2 × 3 reconstruction. W.K.…”

Section: Discussioncontrasting

confidence: 87%

“…Deposition of the Ba or Sr atoms on Si(001) or Ge(001) substrates kept at elevated temperatures (usually above 600 K for Ge and 1000 K for Si) was shown to result in the formation of the incorporated phase [22,[25][26][27][28][29]. This phase is characterized by the adatom induced 2 × 3 surface reconstruction at coverages up to 1/6 ML [28,30].…”

Section: Introductionmentioning

confidence: 99%

“…There has been a long debate regarding the structural models that could account for the 2 × 3 reconstruction of the incorporated phase observed on Si(001) [17,19,[25][26][27]31]. The formation of 2 × 3 is supported by the observations that the presence of the Sr adatoms on Si(001) reduces the activation energy barrier for the Si dimers to diffuse on the surface from 1.29 to 0.63 eV (for 0.5 ML Sr coverage) [26].…”

Section: Introductionmentioning

confidence: 99%

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STM and DFT study on formation and characterization of Ba-incorporated phases on a Ge(001) surface

et al. 2016

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We characterize the incorporation of Ba adatoms into the Ge(001) surface, resulting in the formation of one-dimensional structures with an internal 2 × 3 periodicity, after the deposition of Ba atoms at 970 K or at room temperature followed by a 770 K anneal. Scanning tunneling microscopy (STM) data were compared with theoretically simulated STM images generated by density functional theory electronic structure calculations. Excellent agreement between experiment and simulation was found when using an adopted structural model that assumes partial removal of the surface Ge dimers in the [1-10] surface direction and subsequent addition of a single Ba atom to the substrate second layer. Structural assignments for a number of defects observed within regions of the 2 × 3 reconstruction were also obtained.

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Section: Discussioncontrasting

confidence: 87%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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STM and DFT study on formation and characterization of Ba-incorporated phases on a Ge(001) surface

et al. 2016

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“…4,5,9,[11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] The key question regarding these phases is whether they are simple alkaline-earth adatom structures or more complex surface alloys. Adatom models 8,28 fail to reproduce STM images of the (3×2) phase, 17,25,27 while alloy models 9,10,25 require significant Si dimer movement to occur at temperatures well below those typically required for mass transport on Si surfaces. A diffraction study on single domain vicinal Si(100) revealed a 90º rotation between the bare Si and Sr-induced (2×1) structures at elevated temperatures that could only be explained by substantial mass transport during growth, and strongly suggesting that cooperative effects between Sr and Si reduce Si self-diffusion barriers.…”

Section: Introductionmentioning

confidence: 99%

Formation of alkaline-earth template layers on Ge(100) for oxide heteroepitaxy: Self-organization of ordered islands and trenches

et al. 2011

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The first step required for oxide heteroepitaxy with atomically abrupt interfaces on Si and Ge(100) is the formation of an alkaline earth template layer. The atomic structure of this template layer on Ge(100) was characterized using scanning tunneling microscopy (STM) and electron diffraction. At elevated temperatures, Sr immediately roughens the surface; a transition that can be associated with Sr displacing Ge from the surface. With increasing Sr coverage a series of ordered (3×4), (3×2), (9×1) and (6×1) phases were observed. Transitions between these phases were accompanied by morphological changes: formation of the (3×4) phase smoothed surface; transition to a local (3×2) ordering was accompanied by trench formation; ordering of the trenches led to the (9×1) structure; and finally the (6×1) structure was characterized by atomic rows.For both Sr and Ba, highly ordered arrays of one-dimensional islands could be produced with double height steps preventing orthogonal domain formation. We associate the morphological transitions with strain relief of the surface phases and interactions of step ledges.

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“…Among these metal-induced structures, however, several common periodicities can be observed in low-energy electron diffraction ͑LEED͒ irrespective of adsorbed species. In particular, the 2 ϫ 3 periodicity is found to be induced by Ag, 1,2 alkali, [3][4][5][6][7][8] alkaline-earth ͑AEM͒, [9][10][11][12][13][14][15][16] rare-earth ͑RE͒, [17][18][19][20] and group-III metals [21][22][23][24] on Si͑100͒, and several atomic models have been proposed for these surface phases. In earlier studies, the metal atoms were assumed to reside at specific sites on the intact Si͑100͒2 ϫ 1 surface.…”

Section: Introductionmentioning

confidence: 99%

Atomic geometry and electronic structure of theSi(100)2×3-Eu surface phase

et al. 2005

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The structural and electronic properties of the Eu-induced 2 ϫ 3 reconstruction on Si͑100͒ have been investigated by scanning tunneling microscopy ͑STM͒, scanning tunneling spectroscopy ͑STS͒, and high-resolution Si 2p core-level spectroscopy using synchrotron radiation. STM images of this reconstruction are found to be drastically dependent on the bias voltage and tunneling current. STS measurements show that the 2 ϫ 3-Eu surface is semiconducting. Two occupied states at −0.9 and −1.75 V and three unoccupied states at +0.35, +0.8, and +1.5 V are identified in the ͑dI / dV͒ / ͑I / V͒ spectrum of this surface. The Si 2p core-level spectra taken at various photon energies and emission angles are revealed to include four surface-related components S1−S4 with core-level shifts of −0.54, −0.24, +0.21, and +0.51 eV, respectively. The S1, S2, and S4 components are assigned to first-layer Si atoms in the 2 ϫ 3-Eu structure and the S3 component is shown to arise from the second-layer Si atoms. The results are discussed in the context of structural models reported recently for other metal-induced Si͑100͒2 ϫ 3 reconstructions. Finally, an atomic model is proposed for the 2 ϫ 3-Eu phase.

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STM observation of the 2×3 and c(2×6) structures on Ba/Si(100)

Cited by 27 publications

References 22 publications

STM and DFT study on formation and characterization of Ba-incorporated phases on a Ge(001) surface

STM and DFT study on formation and characterization of Ba-incorporated phases on a Ge(001) surface

Formation of alkaline-earth template layers on Ge(100) for oxide heteroepitaxy: Self-organization of ordered islands and trenches

Atomic geometry and electronic structure of theSi(100)2×3-Eu surface phase

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