Stimulated emission of near-infrared radiation in silicon fin light-emitting diode

Abstract

We propose top-down processes to make silicon multiple quantum wells called fins for a lightemitting diode. The silicon fins are formed vertically to a substrate and embedded in a Si 3 N 4 waveguide. By current injections into silicon fins, we have observed stimulated emission spectra peaked at the wavelengths corresponding to the periodic structures of fins. The near-field mode profiles obtained at the edge of the waveguide qualitatively agreed with theoretical calculations. It has been turned out that both transverse-electric and transverse-magnetic fields can contribute to the optical gain.

Germanium fin light-emitting diode

“…4, we show the current-voltage characteristics of the Ge FinLED with a reference result of the Si FinLED. 7 We found excellent rectifying characteristics with the ideality factor of 1.27 in both Ge and Si FinLEDs, showing good interfacial qualities with low interface traps. The dark currents of the Ge FinLED are increased substantially compared with those of the Si FinLED, but the observed ultralow dark current density of 1.86 Â 10 À5 (3.41 Â 10 À3 ) A/cm 2 at the reverse bias of 1(5) V is comparable to those reported as the record low dark currents.…”

“…16) were also fabricated to enhance the hole mobility by the oxidation condensation techniques. 16,17 The present pure Ge fins can be made by the extensions of previous works, 7,15,16 and Ge FinLEDs will be integrated with Si or Ge FinFETs on the same chip by small modifications of the process steps.…”

“…After the formation of multi-fins, the heavily doped electrodes are formed by ion implantations and the activation. 7 The non-doped Si 0.8 Ge 0.2 was epitaxially grown on the sidewall of the Si fin ( Fig. 1(d2)).…”

“…The three-dimensional (3D) structures of Si fins are also suitable to realize the multiple quantum wells (MQWs) in Si FinLEDs. 7 The SiGe FinFETs (Ref. 16) were also fabricated to enhance the hole mobility by the oxidation condensation techniques.…”

Heterogeneously grown tunable group-IV laser on silicon

“…Extensive research has been conducted on porous Si [15], Si nanocrystals [16], ultrathin Si quantum wells (QWs) [17], Si and SiGe nanostructures [18], GeSn [19], Si Raman lasers [20], and III-V lasers grown on [21] or bonded to Si [22]. While stimulated emission from ultrathin Si QWs has been observed, the gain is not enough to overcome losses and enable lasing [23]. Thus, the hybrid integration of Ge and III-V materials-based optoelectronic devices with traditional Si CMOS technology would revolutionize technology needs in the near future.…”