Stimulated emission at 326 nm and an ultrafast 100-ps-lived luminescence component by ion irradiation of α-alumina

Influence of excitation density on luminescence decay in Y 3 Al 5 O 12 :Ce and BaF 2 crystals excited by free electron laser radiation in VUV

“…In theVUV energy range such investigations of wide-gap solids have been carried mostly out using weak tuneable sources, such as pulsed discharge lamps and synchrotron radiation (SR). High-power, but non-selective excitation by "white" hard X-rays [1], by particles like ion beams [2,3], and by pulsed electrons [3,4] has been used for such purposes in the past. The XUV radiation from storage ring [5] and generated by a plasma laser [6] was applied as well.…”

Effects of Excitation Density on Scintillation Dynamics of CdWO4

“…(14) They analyzed the scintillation temporal profiles of many insulators under heavy-ion irradiation. (15)(16)(17)(18)(19) They also analyzed the scintillation temporal profiles of CdS (20) and Al 2 O 3 in the vacuum ultraviolet region (21) in collaboration with our group. Other groups have measured the scintillation temporal profiles of organic scintillators, such as liquid scintillators, (22) naphthalene, (23) and polystyrene.…”

Biexciton Luminescence in the Layered Perovskite-Type Materials Induced by High-Energy Ion Irradiation

“…To study the interaction of the excited carriers in the ion tracks, the measurement of the luminescence spectra is an effective method. Kimura et al [1] have accomplished the pioneering work in this field by measuring the timeresolved luminescence spectra using the single-ion hitting and singlephoton counting system with the time-resolution of about 100 ps. Our group has conducted an investigation of the diffusion characteristics of the excited carriers in GaAs by analyzing the spectral shape of the timeintegrated luminescence spectra [2].…”