Sticking and recombination of the SiH3 radical on hydrogenated amorphous silicon: The catalytic effect of diborane

Perrin, J.; Takeda, Yoshihiko; Hirano, Naoto; Takeuchi, Yoshinori; Matsuda, Akihisa

doi:10.1016/0039-6028(89)90106-4

Cited by 171 publications

(70 citation statements)

References 24 publications

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“…28,29 The work was pioneered almost two decades ago by Gallagher, Matsuda, and Perrin. 6,7,10,30,31 They constructed a first growth model of a-Si: H with several possible surface reactions of the SiH 3 radical, based on indications that SiH 3 has the highest density of all reactive species in the SiH 4 plasma. 32,33 The model was derived primarily from measurements of the deposition rate and the overall surface reactivity for changing substrate temperature 6 and doping gas concentration, 7 where the overall surface reactivity was measured using the aforementioned indirect method of evaluating the conformality of deposition profiles.…”

Section: The Surface Reaction Probability Of Silane Radicals: Prementioning

confidence: 99%

“…As an early solution to circumvent this problem for the field of plasma deposition, values of the surface reactivity have been determined from the comparison of the conformality of deposition profiles obtained both experimentally and by simulation. [5][6][7][8][9][10][11] However, this procedure in which films were deposited in trenches and cavitylike structures yields only a value of the surface reactivity averaged overall plasma species contributing to film growth. As a consequence, considerable effort has been put into the development of techniques and methods that measure directly the surface reactivity of a specific radical and which are generally applicable during plasma processing.…”

Section: Introductionmentioning

confidence: 99%

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Time-resolved cavity ringdown study of the Si and SiH3 surface reaction probability during plasma deposition of a-Si:H at different substrate temperatures

Hoefnagels

Barrell

Kessels

et al. 2004

Journal of Applied Physics

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Time-resolved cavity ringdown spectroscopy (τ-CRDS) has been applied to determine the surface reaction probability β of Si and SiH3 radicals during plasma deposition of hydrogenated amorphous silicon (a-Si:H). In an innovative approach, our remote Ar-H2-SiH4 plasma is modulated by applying pulsed rf power to the substrate and the resulting time-dependent radical densities are monitored to yield the radical loss rates. It is demonstrated that the loss rates obtained with this τ-CRDS technique equal the loss rates in the undisturbed plasma and the determination of the gas phase reaction rates of Si and SiH3 as well as their surface reaction probability β is discussed in detail. It is shown that Si is mainly lost in the gas phase to SiH4 [reaction rate kr=(3.0±0.6)×10−16m3s−1], while the probability for Si to react at an a-Si:H surface is 0.95<βSi<1 for a substrate temperature of 200°C. SiH3 is only lost in reactions with the surface and measurements of β of SiH3 for substrate temperatures in the range of 50–450°C show that βSiH3=(0.30±0.03), independent of the substrate temperature. The implications for a-Si:H film growth are discussed.

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Section: The Surface Reaction Probability Of Silane Radicals: Prementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Time-resolved cavity ringdown study of the Si and SiH3 surface reaction probability during plasma deposition of a-Si:H at different substrate temperatures

Hoefnagels

Barrell

Kessels

et al. 2004

Journal of Applied Physics

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show abstract

“…83] except for the H atoms that are released from radicals during the growth process at the surface. This indicates that the substrate temperature provides the required energy for optimum growth in the case of an ETP, i.e., a high temperature is needed for the necessary cross-linking step at the surface in absence of ion bombardment [32,[84][85][86][87]. At the elevated temperatures the high growth rate is needed to prevent thermal hydrogen desorption from the surface-region to become significant [53].…”

Section: Measurementsmentioning

confidence: 99%

Integration of Expanding Thermal Plasma deposited Hydrogenated Amorphous Silicon in Solar Cells

et al. 2002

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A cascaded arc expanding thermal plasma is used to deposit intrinsic hydrogenated amorphous silicon at growth rates between 0.2 and 3 nm/s. Incorporation into a single junction p-i-n solar cell resulted in an initial efficiency of 6.7%, whereas all the optical and initial electrical properties of the individual layers are comparable with RF-PECVD deposited films. In this cell the intrinsic layer was deposited at 0.85 nm/s and at a deposition temperature of 250°C, which is the temperature limit for growing the p-i-n sequence. The cell efficiency is limited by the fill factor and using a buffer layer at the p-i interface deposited with RF-PECVD at low growth rate can increase this. The increase in fill factor is a result of a lower initial defect density near the p-i interface then obtained with the expanding thermal plasma, resulting in better charge carrier collection. To use larger growth rates, while maintaining the material properties, higher deposition temperatures are required. Higher deposition temperatures result in a smaller optical bandgap for the intrinsic layer and deterioration of the p-type layer, resulting in a lower opencircuit voltage. First results on applying a buffer layer will also be presented.

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“…This work was largely put into shape by the efforts of Gallagher, Perrin, and Matsuda. [1][2][3][4][5] They have tried to formulate a kinetic growth model for a-Si:H deposition, in which they concentrated on the incorporation of SiH 3 in the film. From several experiments they concluded that this radical is dominantly contributing to a-Si:H film growth.…”

Section: Introductionmentioning

confidence: 99%

Surface reaction probability during fast deposition of hydrogenated amorphous silicon with a remote silane plasma

Kessels

Sanden

Severens

et al. 2000

Journal of Applied Physics

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The surface reaction probability ␤ in a remote Ar-H 2 -SiH 4 plasma used for high growth rate deposition of hydrogenated amorphous silicon ͑a-Si:H͒ has been investigated by a technique proposed by D. A. Doughty et al. ͓J. Appl. Phys. 67, 6220 ͑1990͔͒. Reactive species from the plasma are trapped in a well, created by two substrates with a small slit in the upper substrate. The distribution of amount of film deposited on both substrates yields information on the compound value of the surface reaction probability, which depends on the species entering the well. The surface reaction probability decreases from a value within the range of 0.45-0.50 in a highly dissociated plasma to 0.33Ϯ0.05 in a plasma with ϳ12% SiH 4 depletion. This corresponds to a shift from a plasma with a significant production of silane radicals with a high ͑surface͒ reactivity (SiH x ,xϽ3) to a plasma where SiH 3 is dominant. This has also been corroborated by Monte Carlo simulations. The decrease in surface reaction probability is in line with an improving a-Si:H film quality. Furthermore, the influence of the substrate temperature has been investigated.

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Sticking and recombination of the SiH3 radical on hydrogenated amorphous silicon: The catalytic effect of diborane

Cited by 171 publications

References 24 publications

Time-resolved cavity ringdown study of the Si and SiH3 surface reaction probability during plasma deposition of a-Si:H at different substrate temperatures

Time-resolved cavity ringdown study of the Si and SiH3 surface reaction probability during plasma deposition of a-Si:H at different substrate temperatures

Integration of Expanding Thermal Plasma deposited Hydrogenated Amorphous Silicon in Solar Cells

Surface reaction probability during fast deposition of hydrogenated amorphous silicon with a remote silane plasma

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