“Stickier”-Surface Sb2Te3 Templates Enable Fast Memory Switching of Phase Change Material GeSb2Te4 with Growth-Dominated Crystallization

Feng, Jinlong; Lotnyk, Andriy; Bryja, Hagen; Wang, Xiaojie; Xu, Meng; Lin, Qi; Cheng, Xiaomin; Xu, Ming; Tong, Hao; Miao, Xiangshui

doi:10.1021/acsami.0c07973

“…Similarly to , has recently received great attention to be utilized in applications of batteries 51 , 52 , photoelectrical 53 , 54 , thermoelectric devices 55 and photovoltaic light absorber 56 , due to its prodigious properties such as an optimal bandgap (1-1.3 eV) 57 , 58 , hole mobility up to 42 59 , desirable environmental characteristic 60 , 61 , physiochemical stability 41 , low-cost 62 , and elevated thermoelectric power 24 , as well as interesting optoelectronic features with absorption coefficient larger than 105 (at short wavelength) 27 , 63 . Also, a good efficiency in the power conversion up to 9.2 as very recently reported by Li et al 64 On the other hand, is receiving growing research attention within the scientific community because of its gorgeous properties such as low crystallization temperature 65 , and topological insulators 66 . Indeed, chips have already been reported for many applications such as the template materials 65 , lithium-ion batteries 67 , fast memory switching 68 , and thermoelectric devices 69 , 70 .…”

Section: Introductionmentioning

confidence: 86%

“…Also, a good efficiency in the power conversion up to 9.2 as very recently reported by Li et al 64 On the other hand, is receiving growing research attention within the scientific community because of its gorgeous properties such as low crystallization temperature 65 , and topological insulators 66 . Indeed, chips have already been reported for many applications such as the template materials 65 , lithium-ion batteries 67 , fast memory switching 68 , and thermoelectric devices 69 , 70 . However, the states of the surface present in the isostructural compounds as the Dirac cone at around the Brillouin zone center ( -point) with a spin texture in charge of fascinating properties like comparative insensitivity to surface information 71 , 72 .…”

Section: Introductionmentioning

confidence: 86%

Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure

Bafekry

¹

,

Mortazavi

²

,

Fadlallah

³

et al. 2021

Sci Rep

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Abstract$$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 and $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 are well-known layered bulk structures with weak van der Waals interactions. In this work we explore the atomic lattice, dynamical stability, electronic and optical properties of $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 , $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 and $$\hbox {Sb}_2\hbox {Te}_3$$ Sb 2 Te 3 monolayers using the density functional theory simulations. Molecular dynamics and phonon dispersion results show the desirable thermal and dynamical stability of studied nanosheets. On the basis of HSE06 and PBE/GGA functionals, we show that all the considered novel monolayers are semiconductors. Using the HSE06 functional the electronic bandgap of $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 , $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 and $$\hbox {Sb}_2\hbox {Te}_3$$ Sb 2 Te 3 monolayers are predicted to be 2.15, 1.35 and 1.37 eV, respectively. Optical simulations show that the first absorption coefficient peak for $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 , $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 and $$\hbox {Sb}_2\hbox {Te}_3$$ Sb 2 Te 3 monolayers along in-plane polarization is suitable for the absorption of the visible and IR range of light. Interestingly, optically anisotropic character along planar directions can be desirable for polarization-sensitive photodetectors. Furthermore, we systematically investigate the electrical transport properties with combined first-principles and Boltzmann transport theory calculations. At optimal doping concentration, we found the considerable larger power factor values of 2.69, 4.91, and 5.45 for hole-doped $$\hbox {Sb}_{{2}}\hbox {S}_{{3}}$$ Sb 2 S 3 , $$\hbox {Sb}_{{2}}\hbox {Se}_{{3}}$$ Sb 2 Se 3 , and $$\hbox {Sb}_{{2}}\hbox {Te}_{{3}}$$ Sb 2 Te 3 , respectively. This study highlights the bright prospect for the application of $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 , $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 and $$\hbox {Sb}_2\hbox {Te}_3$$ Sb 2 Te 3 nanosheets in novel electronic, optical and energy conversion systems.

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“…With the coming of the big data age, the explosive growth of data demands the storage media to be both fast-processing and largecapacity, [1,2] which cannot be achieved in the mainstream NAND flash and dynamic random-access memory (DRAM). Emerging phase-change memory (PCM) has been proved to be a potential candidate to fill the performance gap between the flash and DRAM [3][4][5] and acts as a building block of in-memory computing. [6,7] PCM has great advantages in device shrinkage because the decrease of programming area enables us to further increase the integrated level of memory chips and process more complex tasks for a neuromorphic computing network.…”

Section: Introductionmentioning

confidence: 99%

Scalability of Sulfur‐Based Ovonic Threshold Selectors for 3D Stackable Memory Applications

Jia

¹

,

Li

²

,

Liu

³

et al. 2021

Physica Rapid Research Ltrs

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A two‐terminal selector is an essential element for high‐density 3D stackable memory arrays. Suppressing sneak current, the device also needs to provide extremely high current density to melt‐quench the storage layer in phase‐change memory (PCM). Recently, an ovonic threshold switching (OTS) selector based on amorphous GeS demonstrated a large current density, which seems to be promising for 3D stackable PCM application. Herein, the scalability of GeS OTS selectors is investigated as the device scales down from 200 to 60 nm. Interestingly, the ON/OFF current, threshold voltage, and switching speed hardly change as the device scales down, whereas the ON current density exponentially grows. A large current density, ≈35.4 MA cm−2, is achieved in 60 nm‐sized devices. The high current density endows the GeS selector with great potential for use in high‐density 3D stackable memory applications.

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“…As another example, Sb 2 Te 3 films are employed as templates to enable fast memory switching of phase change materials like GeSb 2 Te 4 9 . Sb 2 Te 3 coated onto Ge-Sb-Te substrates is nominated for as promising heterojunctions for enhancing the speed of response of phase-memory change devices 9 . In addition, Sb 2 Te 3 thin films which are deposited onto CdTe based solar cells, improved the solar cell efficiency up to 8.01% 10 .…”

Section: Introductionmentioning

confidence: 99%

Band Offsets, Optical Conduction, Photoelectric and Dielectric Dispersion in InSe/Sb2Te3 Heterojunctions

Alfhaid

¹

,

Qasrawi

²

,

Algarni

³

2021

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InSe based heterojunction devices gain importance in optoelectronic applications in NIR range as multipurpose sensors. For this reason, InSe/Sb 2 Te 3 heterojunctions are constructed as NIR sensors by the thermal evaporation technique. The structural, optical, dielectric and photoelectric properties of InSe/Sb 2 Te 3 heterojunctions are explored by X-ray diffraction and ultraviolet-visible light spectrophotometry techniques. The structural analyses revealed the preferred growth of polycrystalline hexagonal Sb 2 Te 3 onto amorphous InSe as a major phase. Optically, the coating of Sb 2 Te 3 onto InSe enhanced the light absorbability of InSe by more than 18 times, redshifts the energy band gap, increased the dielectric constant by ~5 times and increased the optical conductivity by 35 times in the NIR range of light. A conduction and valance band offsets of 0.40 and 0.68 eV are determined for the InSe/Sb 2 Te 3 heterojunction devices. In addition, the Drude-Lorentz fittings of the optical conductivity indicated a remarkable increase in the plasmon frequency values upon depositing of Sb 2 Te 3 onto InSe. The illumination intensity and time dependent photocurrent measurements resulted in an enhancement in the photocurrent values by one order of magnitude. The response time of the devices is sufficiently short to nominate the InSe/Sb 2 Te 3 heterojunction devices as fast responding NIR sensors suitable for optoelectronic applications.

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“Stickier”-Surface Sb₂Te₃ Templates Enable Fast Memory Switching of Phase Change Material GeSb₂Te₄ with Growth-Dominated Crystallization

Cited by 63 publications

References 50 publications

Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure

Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure

Scalability of Sulfur‐Based Ovonic Threshold Selectors for 3D Stackable Memory Applications

Band Offsets, Optical Conduction, Photoelectric and Dielectric Dispersion in InSe/Sb2Te3 Heterojunctions

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