Stepwise Sulfurization from MoO<sub>3</sub> to MoS<sub>2</sub> via Chemical Vapor Deposition

Pondick, Joshua V.; Woods, John M.; Xing, Jie; Zhou, Yu; Judy, J.

doi:10.1021/acsanm.8b01266

Cited by 92 publications

(78 citation statements)

References 63 publications

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“…If the CVD is going to be used for large-scale production of MoS 2 samples, it is important to understand how small variations of CVD process parameters could lead to different results. 19,20…”

Section: Introductionmentioning

confidence: 99%

Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS₂ Using MoO₃ Thin Film as a Precursor for Coevaporation

et al. 2018

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Chemical vapor deposition (CVD) is a powerful method employed for high-quality monolayer crystal growth of 2D transition metal dichalcogenides with much effort invested toward improving the growth process. Here, we report a novel method for CVD-based growth of monolayer molybdenum disulfide (MoS 2 ) by using thermally evaporated thin films of molybdenum trioxide (MoO 3 ) as the molybdenum (Mo) source for coevaporation. Uniform evaporation rate of MoO 3 thin films provides uniform Mo vapors which promote highly reproducible single-crystal growth of MoS 2 throughout the substrate. These high-quality crystals are as large as 95 μm and are characterized by scanning electron microscopy, Raman spectroscopy, photoluminescence spectroscopy, atomic force microscopy, and transmission electron microscopy. The bottom-gated field-effect transistors fabricated using the as-grown single crystals show n-type transistor behavior with a good on/off ratio of 10 6 under ambient conditions. Our results presented here address the precursor vapor control during the CVD process and is a major step forward toward reproducible growth of MoS 2 for future semiconductor device applications.

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Section: Introductionmentioning

confidence: 99%

Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS₂ Using MoO₃ Thin Film as a Precursor for Coevaporation

et al. 2018

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“…[ 28–31 ] In the Raman spectra in Figure 4, no peaks expect at 383 and 408 cm −1 have been observed, which indicates that there is intermediate product MoOS 2 . [ 32 ] Therefore the growth of MoS 2 in our synthesis process can be explained by the second growth mechanism as mentioned above. Consider the following two‐step reactions [ 33,34 ]

Mo {normalO}_{3} + \frac{x}{2} S \to Mo {normalO}_{3 - x} + \frac{x}{2} S {normalO}_{2}

Mo {normalO}_{3 - x} + \frac{7 - x}{2} S \to Mo {normalS}_{2} + \frac{3 - x}{2} S {normalO}_{2}

…”

Section: Growth Mechanism Of V‐2d Mos2mentioning

confidence: 92%

Facile Synthesis of Vertically Aligned MoS₂ Nanosheets at Ambient Pressure

Borah

Kumar

2020

Crystal Research and Technology

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Vertically aligned 2D molybdenum disulfide (MoS2) nanosheets are grown directly on SiO2/Si substrate using an ordinary tubular furnace under 850 °C temperature and atmospheric pressure condition. To achieve high‐quality vertically aligned 2D MoS2, the amount of precursor material, i.e., molybdenum trioxide (MoO3) powder and sulfur (S), is varied, keeping the other parameters such as temperature and carrier gas flow rate constant. The Raman spectroscopy confirms the formation of 2D MoS2 layers and it illustrates that as‐grown MoS2 is in few‐layer forms with good crystallinity. The Raman spectra identifies the best quality 2D MoS2. The topographical and morphological studies of MoS2 carried out by atomic force microscope (AFM) and field effect scanning microscope (FESEM) reveal that as‐synthesized MoS2 is vertically aligned. X‐ray diffraction and energy dispersive spectroscopy (EDS) are carried out in order to identify the phase and elements in the product. In the present work, the emphasis is given on the vertical alignment rather than the thickness of 2D MoS2. Finally, it is demonstrated that vertically aligned 2D MoS2 can be grown simply on SiO2/Si substrate using a simple ordinary tubular furnace under atmospheric pressure condition by varying the amount of MoO3 and S.

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“…The single‐layer MoS 2 domain was transferred onto SiO 2 /Si substrates with exfoliated WTe 2 to form MoS 2 /WTe 2 heterostructures using a PMMA‐mediated HF etching process. For the microreactors fabricated on various dielectric substrates, growth substrates for MoS 2 flakes were treated with hexamethylpararosaniline chloride (500 × 10 −9 m aqueous solution, >90%, Sigma‐Aldrich) and grown at atmospheric pressure under 20 sccm of argon at 700 °C for 5 min as described in our previous work . The flakes were then spin‐coated with cellulose acetate butyrate polymer (CAB, 12–15 wt% Acetyl/36–40 wt% Butyryl, M n ≈ 30 000, Sigma‐Aldrich) and transferred to prepatterned substrates using a water‐mediated transfer process …”

Section: Methodsmentioning

confidence: 99%

Unveiling the Interfacial Effects for Enhanced Hydrogen Evolution Reaction on MoS₂/WTe₂ Hybrid Structures

Zhou

Pondick

Silva

et al. 2019

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Using the MoS2‐WTe2 heterostructure as a model system combined with electrochemical microreactors and density function theory calculations, it is shown that heterostructured contacts enhance the hydrogen evolution reaction (HER) activity of monolayer MoS2. Two possible mechanisms are suggested to explain this enhancement: efficient charge injection through large‐area heterojunctions between MoS2 and WTe2 and effective screening of mirror charges due to the semimetallic nature of WTe2. The dielectric screening effect is proven minor, probed by measuring the HER activity of monolayer MoS2 on various support substrates with dielectric constants ranging from 4 to 300. Thus, the enhanced HER is attributed to the increased charge injection into MoS2 through large‐area heterojunctions. Based on this understanding, a MoS2/WTe2 hybrid catalyst is fabricated with an HER overpotential of −140 mV at 10 mA cm−2, a Tafel slope of 40 mV dec−1, and long stability. These results demonstrate the importance of interfacial design in transition metal dichalcogenide HER catalysts. The microreactor platform presents an unambiguous approach to probe interfacial effects in various electrocatalytic reactions.

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Stepwise Sulfurization from MoO₃ to MoS₂ via Chemical Vapor Deposition

Cited by 92 publications

References 63 publications

Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS₂ Using MoO₃ Thin Film as a Precursor for Coevaporation

Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS₂ Using MoO₃ Thin Film as a Precursor for Coevaporation

Facile Synthesis of Vertically Aligned MoS₂ Nanosheets at Ambient Pressure

Unveiling the Interfacial Effects for Enhanced Hydrogen Evolution Reaction on MoS₂/WTe₂ Hybrid Structures

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Stepwise Sulfurization from MoO3 to MoS2 via Chemical Vapor Deposition

Cited by 92 publications

References 63 publications

Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS2 Using MoO3 Thin Film as a Precursor for Coevaporation

Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS2 Using MoO3 Thin Film as a Precursor for Coevaporation

Facile Synthesis of Vertically Aligned MoS2 Nanosheets at Ambient Pressure

Unveiling the Interfacial Effects for Enhanced Hydrogen Evolution Reaction on MoS2/WTe2 Hybrid Structures

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Stepwise Sulfurization from MoO₃ to MoS₂ via Chemical Vapor Deposition

Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS₂ Using MoO₃ Thin Film as a Precursor for Coevaporation

Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS₂ Using MoO₃ Thin Film as a Precursor for Coevaporation

Facile Synthesis of Vertically Aligned MoS₂ Nanosheets at Ambient Pressure

Unveiling the Interfacial Effects for Enhanced Hydrogen Evolution Reaction on MoS₂/WTe₂ Hybrid Structures