2019
DOI: 10.1002/smll.201900078
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Unveiling the Interfacial Effects for Enhanced Hydrogen Evolution Reaction on MoS2/WTe2 Hybrid Structures

Abstract: Using the MoS2‐WTe2 heterostructure as a model system combined with electrochemical microreactors and density function theory calculations, it is shown that heterostructured contacts enhance the hydrogen evolution reaction (HER) activity of monolayer MoS2. Two possible mechanisms are suggested to explain this enhancement: efficient charge injection through large‐area heterojunctions between MoS2 and WTe2 and effective screening of mirror charges due to the semimetallic nature of WTe2. The dielectric screening … Show more

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Cited by 60 publications
(54 citation statements)
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“…Additionally, WTe 2 has been touted as a promising candidate for large-gap quantum spin Hall insulators [5,21,22]. Lastly, through electrochemical investigations, the possibility of using WTe 2 as a catalyst for the hydrogen evolution reaction (HER) has been examined [24,[27][28][29][30].…”
Section: Introductionmentioning
confidence: 99%
“…Additionally, WTe 2 has been touted as a promising candidate for large-gap quantum spin Hall insulators [5,21,22]. Lastly, through electrochemical investigations, the possibility of using WTe 2 as a catalyst for the hydrogen evolution reaction (HER) has been examined [24,[27][28][29][30].…”
Section: Introductionmentioning
confidence: 99%
“…These results suggest that out‐of‐plane deformation via the transformation of atomic‐scale structures can substantially enhance the interfacial electron‐transfer kinetics of these systems. [ 40 ] One of the important descriptors for HER catalysts is the turnover frequency (TOF, the number of hydrogen molecules evolved per second), which is the basis for determining the inherent electrocatalytic activity. We calculated the TOF values according to previous literature [ 39 ] (Figure S22, Supporting Information).…”
Section: Resultsmentioning
confidence: 99%
“…The MoS 2 -based lateral heterointerfaces have been found to markedly enhance H 2 or O 2 production efficiency. [13,17,18] A more elaborate design was the epitaxial M-S heterostructures, which were considered as intriguing building blocks for low-power, high-performance, and flexible electronic and optoelectronic devices. [19][20][21] In the artificially in-plane M-S heterostructures, the metallic 2D materials governed internal electrical transport, and the covalent connection replaced traditional physical electrode contact, which can dramatically improve charge injection, thus enhancing electrical performance.…”
Section: Doi: 101002/advs202002172mentioning
confidence: 99%